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Extract from the Register of European Patents

EP About this file: EP1263031

EP1263031 - METHOD FOR PRODUCING GROUP III NITRIDE COMPOUND SEMICONDUCTOR AND GROUP III NITRIDE COMPOUND SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  08.05.2009
Database last updated on 13.04.2024
Most recent event   Tooltip08.05.2009Withdrawal of applicationpublished on 10.06.2009  [2009/24]
Applicant(s)For all designated states
TOYODA GOSEI CO., LTD.
1, Nagahata, Ochiai, Haruhi-cho Nishikasugai-gun
Aichi-ken 452-8564 / JP
[N/P]
Former [2002/49]For all designated states
Toyoda Gosei Co., Ltd.
1, Nagahata, Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi-ken 452-8564 / JP
Inventor(s)01 / KOIKE, Masayoshi
1, Aza-Nagahata, Ooaza-Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
02 / KOJIMA, Akira
1, Aza-Nagahata, Ooaza-Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
03 / HIRAMATSU, Toshio
1, Aza-Nagahata, Ooaza-Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
04 / TEZEN, Yuta
1, Aza-Nagahata, Ooaza-Ochiai, Haruhi-cho
Nishikasugai-gun, Aichi 452-8564 / JP
 [2002/49]
Representative(s)TBK
Bavariaring 4-6
80336 München / DE
[N/P]
Former [2005/34]TBK-Patent
Bavariaring 4-6
80336 München / DE
Former [2002/49]Leson, Thomas Johannes Alois, Dipl.-Ing.
Tiedtke-Bühling-Kinne & Partner GbR, TBK-Patent, Bavariaring 4
80336 München / DE
Application number, filing date00987700.221.12.2000
[2002/49]
WO2000JP09121
Priority number, dateJP1999036761324.12.1999         Original published format: JP 36761399
[2002/49]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO0148799
Date:05.07.2001
Language:EN
[2001/27]
Type: A1 Application with search report 
No.:EP1263031
Date:04.12.2002
Language:EN
The application published by WIPO in one of the EPO official languages on 05.07.2001 takes the place of the publication of the European patent application.
[2002/49]
Search report(s)International search report - published on:JP05.07.2001
ClassificationIPC:H01L21/205, H01S5/343, H01L33/00
[2002/49]
CPC:
H01L33/0075 (EP,US); H01L21/20 (KR); H01L21/0237 (EP,US);
H01L21/02381 (EP,US); H01L21/0242 (EP,US); H01L21/02458 (EP,US);
H01L21/02502 (EP,US); H01L21/0254 (EP,US); H01L21/02573 (EP,US);
H01L21/0262 (EP,US); H01L21/02642 (EP,US); H01L21/02647 (EP,US);
H01L33/007 (EP,US); H01S2304/12 (EP,US); H01S5/32341 (EP,US) (-)
Designated contracting statesDE,   FR,   GB [2004/20]
Former [2002/49]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
SINot yet paid
TitleGerman:METHODE ZUR HERSTELLUNG GRUPPE III NITRID VERBINDUNGSHALBLEITER UND GRUPPE III NITRID VERBINDUNGSHALBLEITERANORDNUNG[2002/49]
English:METHOD FOR PRODUCING GROUP III NITRIDE COMPOUND SEMICONDUCTOR AND GROUP III NITRIDE COMPOUND SEMICONDUCTOR DEVICE[2002/49]
French:PROC D PERMETTANT DE PRODUIRE UN SEMI-CONDUCTEUR BASE DE COMPOS NITRURE DU GROUPE III, ET DISPOSITIF SEMI-CONDUCTEURS BASE DE COMPOS NITRURE DU GROUPE III[2002/49]
Entry into regional phase20.06.2002Translation filed 
25.09.2002National basic fee paid 
25.09.2002Search fee paid 
25.09.2002Designation fee(s) paid 
25.09.2002Examination fee paid 
Examination procedure12.03.2001Request for preliminary examination filed
International Preliminary Examining Authority: JP
20.09.2002Despatch of communication that the application is deemed to be withdrawn, reason: filing fee / search fee not paid in time
25.09.2002Examination requested  [2002/49]
29.04.2009Application withdrawn by applicant  [2009/24]
Fees paidRenewal fee
27.12.2002Renewal fee patent year 03
19.12.2003Renewal fee patent year 04
23.12.2004Renewal fee patent year 05
27.12.2005Renewal fee patent year 06
28.12.2006Renewal fee patent year 07
21.12.2007Renewal fee patent year 08
30.12.2008Renewal fee patent year 09
Penalty fee
Penalty fee Rule 85a EPC 1973
25.09.2002DE   M01   Fee paid on   25.09.2002
25.09.2002FR   M01   Fee paid on   25.09.2002
25.09.2002GB   M01   Fee paid on   25.09.2002
Penalty fee Rule 85b EPC 1973
25.09.2002M01   Fee paid on   25.09.2002
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Cited inInternational search[X]JPH11191659  (NICHIA KAGAKU KOGYO KK);
 [X]JPH11312825  (NICHIA KAGAKU KOGYO KK);
 [X]JPH11340508  (NICHIA KAGAKU KOGYO KK);
 [XE]JP2000244061  (NICHIA KAGAKU KOGYO KK);
 [Y]JPH11329971  (SHARP KK);
 [Y]JPH1131864  (NEC CORP);
 [AE]JP2000124500  (TOSHIBA CORP);
 [AE]JP2000021789  (TOSHIBA CORP);
 [A]JPH11219910  (NICHIA KAGAKU KOGYO KK);
 [AE]JP2000232239  (NICHIA KAGAKU KOGYO KK);
 [AE]JP2000299497  (NICHIA KAGAKU KOGYO KK);
 [AE]JP2000277437  (NICHIA KAGAKU KOGYO KK);
 [A]JPH07249830  (HITACHI LTD)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.