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EP1160866
European procedure
Extract from the Register of European Patents
EP About this file: EP1160866
| EP1160866 - Semiconductor device with power wiring structure [Right-click to bookmark this link] | |||
| Former [2001/49] | Power wiring structure and semiconductor device | ||
| [2006/36] | Status | No opposition filed within time limit Status updated on 11.01.2008 Database last updated on 22.01.2025 | Most recent event Tooltip | 11.01.2008 | No opposition filed within time limit | published on 13.02.2008 [2008/07] | Applicant(s) | For all designated states NISSAN MOTOR CO., LTD. 2, Takara-cho, Kanagawa-ku Yokohama-shi Kanagawa-ken / JP | [N/P] |
| Former [2007/10] | For all designated states NISSAN MOTOR CO., LTD. 2 Takara-cho, Kanagawa-ku Yokohama-shi Kanagawa-ken / JP | ||
| Former [2001/49] | For all designated states NISSAN MOTOR CO., LTD. 2 Takara-cho, Kanagawa-ku Yokohama-shi Kanagawa-ken / JP | Inventor(s) | 01 /
Hanamura, Akihiro 1235-39, Mutsuura-cho Yokohama-shi, Kanagawa-ken / JP | [2001/49] | Representative(s) | Weber, Joachim Hoefer & Partner Patentanwälte Pilgersheimer Strasse 20 81543 München / DE | [N/P] |
| Former [2001/49] | Weber, Joachim, Dr. Hoefer, Schmitz, Weber & Partner Patentanwälte Gabriel-Max-Strasse 29 81545 München / DE | Application number, filing date | 01112178.7 | 17.05.2001 | [2001/49] | Priority number, date | JP20000154704 | 25.05.2000 Original published format: JP 2000154704 | [2001/49] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1160866 | Date: | 05.12.2001 | Language: | EN | [2001/49] | Type: | A3 Search report | No.: | EP1160866 | Date: | 22.12.2004 | [2004/52] | Type: | B1 Patent specification | No.: | EP1160866 | Date: | 07.03.2007 | Language: | EN | [2007/10] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.11.2004 | Classification | IPC: | H01L25/07, H02M7/00, H02G5/00 | [2004/52] | CPC: |
H01L24/49 (EP,US);
H01L23/50 (EP,US);
H01L25/072 (EP,US);
H01L2223/6611 (EP,US);
H01L2224/32145 (EP,US);
H01L2224/48091 (EP,US);
H01L2224/49109 (EP,US);
H01L2224/73265 (EP,US);
H01L2225/06562 (EP,US);
H01L24/48 (EP,US);
H01L2924/00014 (EP,US);
H01L2924/01004 (EP,US);
H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US);
H01L2924/01015 (EP,US);
H01L2924/01023 (EP,US);
H01L2924/01074 (EP,US);
H01L2924/1301 (EP,US);
H01L2924/15787 (EP,US);
H01L2924/19041 (EP,US);
H01L2924/19107 (EP,US);
H01L2924/30107 (EP,US)
(-)
| C-Set: |
H01L2224/48091, H01L2924/00014 (US,EP);
H01L2924/00014, H01L2224/05599 (EP,US);
H01L2924/00014, H01L2224/45099 (EP,US);
H01L2924/1301, H01L2924/00 (US,EP); |
| Former IPC [2001/49] | H01L25/07, H01L23/10 | Designated contracting states | DE, FR, GB [2005/37] |
| Former [2001/49] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Halbleiterelement mit Leistungsverdrahtungsstruktur | [2006/36] | English: | Semiconductor device with power wiring structure | [2006/36] | French: | Dispositif semi-conducteur avec structure d'interconnexion | [2006/36] |
| Former [2001/49] | Leistungsverdrahtungsstruktur und Halbleiter | ||
| Former [2001/49] | Power wiring structure and semiconductor device | ||
| Former [2001/49] | Structure d interconnexion et semi-conducteur | Examination procedure | 17.05.2001 | Examination requested [2001/49] | 07.03.2005 | Despatch of a communication from the examining division (Time limit: M04) | 18.07.2005 | Reply to a communication from the examining division | 07.10.2005 | Despatch of a communication from the examining division (Time limit: M04) | 16.02.2006 | Reply to a communication from the examining division | 22.09.2006 | Communication of intention to grant the patent | 24.01.2007 | Fee for grant paid | 24.01.2007 | Fee for publishing/printing paid | Opposition(s) | 10.12.2007 | No opposition filed within time limit [2008/07] | Fees paid | Renewal fee | 28.05.2003 | Renewal fee patent year 03 | 28.05.2004 | Renewal fee patent year 04 | 31.05.2005 | Renewal fee patent year 05 | 26.05.2006 | Renewal fee patent year 06 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]US5172310 (DEAM DAVID [US], et al) [X] 1,2 * abstract * * column 11, line 55 - column 15, line 35 * [A] 3-11; | [X]EP0427143 (ABB IXYS SEMICONDUCTOR GMBH [DE]) [X] 1,3-11 * the whole document * |