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EP1369913
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EP About this file: EP1369913
| EP1369913 - Method of patterning inter-metal dielectric layers [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 24.02.2006 Database last updated on 09.12.2024 | Most recent event Tooltip | 24.02.2006 | Application deemed to be withdrawn | published on 12.04.2006 [2006/15] | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 416, Maetan 3-dong Paldal-gu Suwon-City Kyungki-do 442-742 / KR | [N/P] |
| Former [2003/50] | For all designated states SAMSUNG ELECTRONICS CO., LTD. 416, Maetan 3-dong, Paldal-gu Suwon-City, Kyungki-do 442-742 / KR | Inventor(s) | 01 /
Lee, Kwang Hee 944/1303 Lotte Apt., Yeongtong-Dong, Paldal-Gu Suwon-Shin, Kyungki-Do 442-724 / KR | 02 /
Jeong, Hyun Dam 111/802 Byucksan Apt., Mangpo-Dong, Paldal-Gu Suwon-Shin, Kyungki-Do 442-707 / KR | 03 /
Lee, Soo Geun 117/1602 Byucksan Apt., Mangpo-Dong, Paldal-Gu Suwon-Shin, Kyungki-Do 442-707 / KR | 04 /
Lee, Kyoung Woo 102/202 Samsung Apt, Singil-4Dong, Yeongdeungpo-Gu Seoul 150-778 / KR | [2003/50] | Representative(s) | Kyle, Diana Elkington and Fife LLP Prospect House 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | [N/P] |
| Former [2003/50] | Kyle, Diana Elkington and Fife Prospect House 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | Application number, filing date | 03253366.3 | 29.05.2003 | [2003/50] | Priority number, date | KR20020031547 | 05.06.2002 Original published format: KR 2002031547 | [2003/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1369913 | Date: | 10.12.2003 | Language: | EN | [2003/50] | Type: | A3 Search report | No.: | EP1369913 | Date: | 05.01.2005 | [2005/01] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 24.11.2004 | Classification | IPC: | H01L21/768 | [2003/50] | CPC: |
H01L21/76825 (EP,US);
H01L21/3205 (KR);
H01L21/76808 (EP,US);
H01L21/76814 (EP,US)
| Designated contracting states | (deleted) [2005/38] |
| Former [2003/50] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Title | German: | Verfahren zur Strukturierung von dielektrischen Zwischenmetall-Schichten | [2003/50] | English: | Method of patterning inter-metal dielectric layers | [2003/50] | French: | Procédé de réalisation d'un motif sur des couches diélectriques inter-métal | [2003/50] | Examination procedure | 06.07.2005 | Application deemed to be withdrawn, date of legal effect [2006/15] | 08.11.2005 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2006/15] | Fees paid | Penalty fee | Penalty fee Rule 85a EPC 1973 | 11.08.2005 | AT M01 Not yet paid | 11.08.2005 | BE M01 Not yet paid | 11.08.2005 | BG M01 Not yet paid | 11.08.2005 | CH M01 Not yet paid | 11.08.2005 | CY M01 Not yet paid | 11.08.2005 | CZ M01 Not yet paid | 11.08.2005 | DE M01 Not yet paid | 11.08.2005 | DK M01 Not yet paid | 11.08.2005 | EE M01 Not yet paid | 11.08.2005 | ES M01 Not yet paid | 11.08.2005 | FI M01 Not yet paid | 11.08.2005 | FR M01 Not yet paid | 11.08.2005 | GB M01 Not yet paid | 11.08.2005 | GR M01 Not yet paid | 11.08.2005 | HU M01 Not yet paid | 11.08.2005 | IE M01 Not yet paid | 11.08.2005 | IT M01 Not yet paid | 11.08.2005 | LU M01 Not yet paid | 11.08.2005 | MC M01 Not yet paid | 11.08.2005 | NL M01 Not yet paid | 11.08.2005 | PT M01 Not yet paid | 11.08.2005 | RO M01 Not yet paid | 11.08.2005 | SE M01 Not yet paid | 11.08.2005 | SI M01 Not yet paid | 11.08.2005 | SK M01 Not yet paid | 11.08.2005 | TR M01 Not yet paid | Penalty fee Rule 85b EPC 1973 | 11.08.2005 | M01 Not yet paid | Additional fee for renewal fee | 31.05.2005 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]EP1094506 (APPLIED MATERIALS INC [US]) [Y] 5-7 * paragraphs [0005] , [0007] , [0010] ** paragraph [0018] - paragraph [0020] *; | [XY]US6319809 (CHANG WENG [TW], et al) [X] 1,2,4,8-10 * the whole document * [Y] 3,5-7; | [Y] - WAETERLOOS ET AL., "Integration Feasibility of Porous SiLK Semiconductor Dielectric", PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, (20010604), pages 253 - 254, XP002303591 [Y] 3 * the whole document * |