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Extract from the Register of European Patents

EP About this file: EP1965433

EP1965433 - High voltage GaN transistors [Right-click to bookmark this link]
Status	The application has been refused Status updated on 05.02.2021 Database last updated on 23.04.2024
Most recent event Tooltip	05.02.2021	Refusal of application	published on 10.03.2021 [2021/10]
Applicant(s)	For all designated states Cree, Inc. 4600 Silicon Drive Durham, NC 27703 / US
	[N/P]
Former [2008/36]	For all designated states CREE, INC. 4600 Silicon Drive Durham, NC 27703 / US
Inventor(s)	01 / Wu, Yifeng 528 Fireside Lane Goleta, CA 93117 / US
	02 / Parikh, Primit 6832 Shadowbrook Drive Goleta, CA 93117 / US
	03 / Mishra, Umesh 2040 Creekside Drive Montesido, CA 93108 / US
	[2008/36]
Representative(s)	Boult Wade Tennant LLP Salisbury Square House 8 Salisbury Square London EC4Y 8AP / GB
	[N/P]
Former [2014/02]	Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB
Former [2010/39]	Cross, Rupert Edward Blount, et al Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB
Former [2008/36]	Crawford, Andrew Birkby, et al A.A. Thornton & Co., 235 High Holborn London WC1V 7LE / GB
Application number, filing date	07253716.0	19.09.2007
	[2008/36]
Priority number, date	US20060603427	21.11.2006 Original published format: US 603427
	[2008/36]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1965433
	Date:	03.09.2008
	Language:	EN
	[2008/36]
	Type:	A3 Search report
	No.:	EP1965433
	Date:	29.07.2009
	[2009/31]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	25.06.2009
Classification	IPC:	H01L29/778, H01L29/40	[2008/36]
	CPC:	H01L29/2003 (EP,US); H01L29/7787 (US); H01L29/404 (EP,US); H01L29/66462 (EP,US); H01L29/7786 (EP,US)
Designated contracting states	DE, FR, IT [2010/14]
Former [2008/36]	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
Title	German:	GaN Hochspannungstransistoren	[2008/36]
	English:	High voltage GaN transistors	[2008/36]
	French:	Transistors à haute tension en GaN	[2008/36]
Examination procedure	18.12.2009	Examination requested [2010/04]
	26.01.2010	Despatch of a communication from the examining division (Time limit: M06)
	02.02.2010	Loss of particular rights, legal effect: designated state(s)
	10.03.2010	Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GB, GR, HU, IE, IS, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
	04.08.2010	Reply to a communication from the examining division
	15.08.2011	Invitation to provide information on prior art
	25.10.2011	Reply to the invitation to provide information on prior art
	15.03.2016	Date of oral proceedings
	22.03.2016	Minutes of oral proceedings despatched
	29.03.2016	Despatch of communication that the application is refused, reason: substantive examination [2021/10]
	15.01.2021	Application refused, date of legal effect [2021/10]
Appeal following examination	25.05.2016	Appeal received No. T2358/16
	08.08.2016	Statement of grounds filed
	15.01.2021	Result of appeal procedure: appeal of the applicant withdrawn
Divisional application(s)	EP12153917.5 / EP2485262
	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 26.01.2010
Fees paid	Renewal fee
	11.09.2009	Renewal fee patent year 03
	14.09.2010	Renewal fee patent year 04
	29.09.2011	Renewal fee patent year 05
	12.09.2012	Renewal fee patent year 06
	12.09.2013	Renewal fee patent year 07
	12.09.2014	Renewal fee patent year 08
	11.09.2015	Renewal fee patent year 09
	13.09.2016	Renewal fee patent year 10
	12.09.2017	Renewal fee patent year 11
	11.09.2018	Renewal fee patent year 12
	27.09.2019	Renewal fee patent year 13
	28.09.2020	Renewal fee patent year 14
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]WO2005114743 (CREE INC [US]) [X] 1-12 * fig. 12 and corresponding text *;
		[X]US2006202272 (WU YIFENG [US], et al) [X] 1-12 * fig. 3, 5-7, 9, 10 and corresponding text *;
		[E]EP1901341 (NEC CORP [JP]) [E] 1-12 * fig. 1-3, 5, 6, 11 and corresponding text *;
		[E]EP1901342 (NEC CORP [JP]) [E] 1-12 * fig. 3, 5, 6, 11, 13 and corresponding text *;
		[A] - CHINI A ET AL, High Breakdown Voltage AlGaN-GaN HEMTs Achieved by Multiple Field Plates, IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, PAGE(S) 161 - 163, (20040401), ISSN 0741-3106, XP011109643 [A] 1-12 * the whole document * DOI: http://dx.doi.org/10.1109/LED.2004.824845
		[A] - OKAMOTO Y ET AL, "A 149W recessed-gate AlGaN/GaN FP-FET", MICROWAVE SYMPOSIUM DIGEST, 2004 IEEE MTT-S INTERNATIONAL FORT WORTH, TX, USA JUNE 6-11, 2004, PISCATAWAY, NJ, USA,IEEE, (20040606), vol. 3, ISBN 978-0-7803-8331-9, pages 1351 - 1354, XP010727955 [A] 1-12 * the whole document * DOI: http://dx.doi.org/10.1109/MWSYM.2004.1338819
	by applicant	US4946547
		US5192987
		US5200022
		US5210051
		US5236395
		US5290393
		US5296395
		USRE34861E
		US5393993
		US5523589
		US5592501
		US5686738
		US5739554
		US6218680
		US6316793
		US2002066908
		US2002167023
		US2003020092
		US6548333
		US2003102482
		US6586781
		US2004012015
		US2004061129
		US2005051796
		US2005051800
		WO2005024909
		US2005173728
		US2005258451
		US2005258450
		US2006019435
		US2006108606
		- The Electrical Engineering Handbook, CRC PRESS, (1997), page 994
		- B. GELMONT; K. KIM; M. SHUR, "Monte Carlo Simulation of Electron Transport in Gallium Nitride", J. APPL. PHYS., (1993), vol. 74, pages 1818 - 18211
		- R. GASKA ET AL., "Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates", APPL. PHYS. LETT., (1998), vol. 72, pages 707 - 709
		- Y.F. WU ET AL., "GaN-Based FETs for Microwave Power Amplification", IEICE TRANS. ELECTRON., (1999), vol. E-82-C, pages 1895 - 1905
		- Y.-F. WU ET AL., "30-W/mm GaN HEMTs by Field Plate Optimization", IEEE ELECTRON DEVICE LETTERS, (200403), vol. 25, no. 3, pages 117 - 119
		- M. MICOVIC ET AL., "AlGaN/GaN Heterojunction Field Effect Transistors Grown by Nitrogen Plasma Assisted Molecular Beam Epitaxy", IEEE TRANS. ELECTRON. DEV., (2001), vol. 48, pages 591 - 596
		- GASKA ET AL., "High-Temperature Performance of AlGaN/GaN HFETS on SiC Substrates", IEEE ELECTRON DEVICE LETTERS, (1997), vol. 18, pages 492 - 494
		- WU ET AL., "High Al-content AlGaN/GaN HEMTs With Very High Performance", IEDM-1999 DIGEST, (199912), pages 925 - 927
		- LU ET AL., "AlGaN/GaN HEMTs on SiC With Over 100 GHz ft and Low Microwave Noise", IEEE TRANSACTIONS ON ELECTRON DEVICES, (200103), vol. 48, no. 3, pages 581 - 585
		- WU ET AL., "High Al- Content AlGaN/GaN MOSFETs for Ultrahigh Performance", IEEE ELECTRON DEVICE LETTERS, (1998), vol. 19, pages 50 - 53
		- ZHANG ET AL., IEEE ELECTRON DEVICE LETTERS, (200009), vol. 21, pages 421 - 423
		- KARMALKAR ET AL., IEEE TRANS. ELECTRON DEVICES, (200108), vol. 48, pages 1515 - 1521
		- ANDO ET AL., IEEE ELECTRON DEVICE LETTERS, (200305), vol. 24, pages 289 - 291
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		- Y-F WU ET AL., IEEE ELECTRON DEVICE LETTERS, (200403), vol. 25, no. 3, pages 117 - 119

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