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Extract from the Register of European Patents

EP About this file: EP2194167

EP2194167 - Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  06.07.2012
Database last updated on 25.03.2025
Most recent event   Tooltip18.07.2014Lapse of the patent in a contracting state
New state(s): HU		published on 20.08.2014  [2014/34]
Applicant(s)For all designated states
Tohoku Techno Arch Co., Ltd.
468, Aza Aoba, Aramaki, Aoba-ku
Sendai-shi, Miyagi 980-0845 / JP
For all designated states
Furukawa Co., Ltd.
2-3, Marunouchi 2-chome Chiyoda-ku
Tokyo 100-8370 / JP
For all designated states
Mitsubishi Chemical Corporation
1-1, Marunouchi 1-chome
Chiyoda-ku
Tokyo 100-8251 / JP
For all designated states
Dowa Holdings Co., Ltd.
14-1, Sotokanda 4-chome Chiyoda-ku Tokyo
101 0021 / JP
For all designated states
EpiValley Co., Ltd.
321 Gongdan-Dong Gumi-City, Gyungsangbuk-do
730-030 / KR
For all designated states
Wavesquare Inc.
633-2 Goan-Ri Baekam-Myeon Cheoin-Gu Yongin-City
Gyeonggi-do 449-863 / KR
[2012/27]
Former [2010/23]For all designated states
Tohoku Techno Arch Co., Ltd.
468, Aza Aoba, Aramaki, Aoba-ku
Sendai-shi, Miyagi 980-0845 / JP
For all designated states
Furukawa Co., Ltd.
2-3, Marunouchi 2-chome Chiyoda-ku
Tokyo 100-8370 / JP
For all designated states
Mitsubishi Chemical Corporation
14-1, Shiba 4-chome Minato-ku
Tokyo 108-0014 / JP
For all designated states
Dowa Holdings Co., Ltd.
14-1, Sotokanda 4-chome Chiyoda-ku Tokyo
101 0021 / JP
For all designated states
EpiValley Co., Ltd.
321 Gongdan-Dong Gumi-City, Gyungsangbuk-do
730-030 / KR
For all designated states
Wavesquare Inc.
633-2 Goan-Ri Baekam-Myeon Cheoin-Gu Yongin-City
Gyeonggi-do 449-863 / KR
Inventor(s)01 / Cho, Meoung-Whan
1304-601, Kyongnam Anusvill
Giheung-gu
Yongin-city
Gyeonggi-do, 406-908 / KR
02 / Yao, Takafumi
1-4-6-1203 Katahira
Aoba-ku
Sendai 980-0812 / JP
 [2011/35]
Former [2010/41]01 / Cho, Meoung-Whan
1304-601, Kyongnam Anusvill, Giheung-gu Yongin-city
Gyeonggi-do, 406-908 / KR
02 / Yao, Takafumi
1-4-6-1203 Katahira Aoba-ku
Sendai 980-0812 / JP
Former [2010/23]01 / Cho, Meoung-Whan
1-3-2-102, Mikamine Taihaku-ku Sendai-shi
Miyagi-ken 9820826 / JP
02 / Yao, Takafumi
11-407, Kawauchi-jutaku 35-banchi Kawauchi Motohasekura Aoba-ku
Miyagi-ken 9800861 / JP
Representative(s)MacDougall, Alan John Shaw, et al
Mathys & Squire The Shard
32 London Bridge Street
London SE1 9SG / GB
[N/P]
Former [2010/23]MacDougall, Alan John Shaw, et al
Mathys & Squire LLP 120 Holborn London
EC1N 2SQ / GB
Application number, filing date10156004.331.03.2006
[2010/23]
Priority number, dateJP2005010807204.04.2005         Original published format: JP 2005108072
[2010/23]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2194167
Date:09.06.2010
Language:EN
[2010/23]
Type: B1 Patent specification 
No.:EP2194167
Date:31.08.2011
Language:EN
[2011/35]
Search report(s)(Supplementary) European search report - dispatched on:EP28.04.2010
ClassificationIPC:C30B25/02, C30B25/18, C30B29/40, H01L21/20
[2010/23]
CPC:
C30B29/406 (EP,US); H10H20/815 (EP,KR,US); C30B25/02 (EP,US);
C30B25/183 (EP,US); H01L21/0237 (EP,US); H01L21/02458 (EP,US);
H01L21/02488 (EP,US); H01L21/02491 (EP,US); H01L21/02502 (EP,US);
H01L21/0254 (EP,US); H01L21/02614 (EP,US); H10D62/8503 (EP,US);
H10H20/01335 (EP,US) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2010/23]
TitleGerman:Verfahren zum Züchten eines GaN-Einzelkristalls, Verfahren zur Herstellung eines GaN-Substrats, Verfahren zur Herstellung eines Elements auf GaN-Basis und Element auf GaN-Basis[2010/23]
English:Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element[2010/23]
French:Procédé de croissance d'un cristal unique de GaN, procédé de préparation de substrat de GaN, procédé de production d'un élément à base de GaN et élément à base de GaN[2010/23]
Examination procedure09.12.2010Amendment by applicant (claims and/or description)
09.12.2010Examination requested  [2011/03]
27.01.2011Communication of intention to grant the patent
23.05.2011Fee for grant paid
23.05.2011Fee for publishing/printing paid
Parent application(s)   TooltipEP06730906.2  / EP1876270
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20060730906) is  09.11.2009
Opposition(s)01.06.2012No opposition filed within time limit [2012/32]
Fees paidRenewal fee
09.03.2010Renewal fee patent year 03
09.03.2010Renewal fee patent year 04
09.03.2010Renewal fee patent year 05
23.02.2011Renewal fee patent year 06
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU31.03.2006
AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
TR31.08.2011
BG30.11.2011
GR01.12.2011
ES11.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
IE31.03.2012
LI31.03.2012
LU31.03.2012
MC31.03.2012
[2014/34]
Former [2014/27]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
TR31.08.2011
BG30.11.2011
GR01.12.2011
ES11.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
IE31.03.2012
LI31.03.2012
LU31.03.2012
MC31.03.2012
Former [2014/21]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
TR31.08.2011
BG30.11.2011
GR01.12.2011
ES11.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
IE31.03.2012
LI31.03.2012
MC31.03.2012
Former [2013/29]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
BG30.11.2011
GR01.12.2011
ES11.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
IE31.03.2012
LI31.03.2012
MC31.03.2012
Former [2013/22]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
ES11.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
IE31.03.2012
LI31.03.2012
MC31.03.2012
Former [2013/08]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
IE31.03.2012
LI31.03.2012
MC31.03.2012
Former [2013/07]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
IS31.12.2011
PT02.01.2012
CH31.03.2012
LI31.03.2012
MC31.03.2012
Former [2012/47]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
IS31.12.2011
PT02.01.2012
MC31.03.2012
Former [2012/34]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
DK31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
IS31.12.2011
PT02.01.2012
Former [2012/26]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
PL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
IS31.12.2011
PT02.01.2012
Former [2012/23]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
EE31.08.2011
FI31.08.2011
IT31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
RO31.08.2011
SE31.08.2011
SI31.08.2011
SK31.08.2011
GR01.12.2011
IS31.12.2011
PT02.01.2012
Former [2012/21]AT31.08.2011
BE31.08.2011
CY31.08.2011
CZ31.08.2011
FI31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
SE31.08.2011
SI31.08.2011
GR01.12.2011
IS31.12.2011
Former [2012/17]AT31.08.2011
BE31.08.2011
CY31.08.2011
FI31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
SE31.08.2011
SI31.08.2011
GR01.12.2011
IS31.12.2011
Former [2012/14]AT31.08.2011
CY31.08.2011
FI31.08.2011
LT31.08.2011
LV31.08.2011
NL31.08.2011
SE31.08.2011
SI31.08.2011
GR01.12.2011
IS31.12.2011
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.