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EP2398048
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EP About this file: EP2398048
| EP2398048 - SEMICONDUCTOR PROTECTION FILM-FORMING FILM WITH DICING SHEET, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 21.12.2012 Database last updated on 21.03.2025 | Most recent event Tooltip | 21.12.2012 | Withdrawal of application | published on 23.01.2013 [2013/04] | Applicant(s) | For all designated states Sumitomo Bakelite Co., Ltd. 5-8 Higashi-Shinagawa 2-chome Shinagawa-ku Tokyo 140-0002 / JP | [2011/51] | Inventor(s) | 01 /
HIRANO, Takashi c/o Sumitomo Bakelite Co. Ltd. 5-8, Higashi-Shinagawa 2-chome Shinagawa-ku Tokyo 140-0002 / JP | 02 /
YOSHIDA, Masato c/o Sumitomo Bakelite Co. Ltd. 5-8, Higashi-Shinagawa 2-chome Shinagawa-ku Tokyo 140-0002 / JP | [2011/51] | Representative(s) | Müller, Christian Stefan Gerd, et al ZSP Patentanwälte PartG mbB Hansastraße 32 80686 München / DE | [N/P] |
| Former [2011/51] | Müller, Christian Stefan Gerd, et al Dr. Volker Vossius Patent- und Rechtsanwaltskanzlei Geibelstrasse 6 81679 München / DE | Application number, filing date | 10741084.7 | 10.02.2010 | WO2010JP00810 | Priority number, date | JP20090029361 | 12.02.2009 Original published format: JP 2009029361 | JP20090156551 | 01.07.2009 Original published format: JP 2009156551 | JP20100010228 | 20.01.2010 Original published format: JP 2010010228 | [2011/51] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2010092804 | Date: | 19.08.2010 | Language: | JA | [2010/33] | Type: | A1 Application with search report | No.: | EP2398048 | Date: | 21.12.2011 | Language: | EN | [2011/51] | Search report(s) | International search report - published on: | JP | 19.08.2010 | Classification | IPC: | H01L23/00, C08F290/06, H01L21/301 | [2011/51] | CPC: |
H01L23/293 (EP,US);
H01L21/48 (KR);
C08F290/06 (KR);
C08F290/064 (EP,US);
C08K3/36 (EP,US);
H01L21/30 (KR);
H01L21/6836 (EP,US);
H01L23/00 (KR);
H01L24/27 (EP,US);
H01L24/29 (EP,US);
H01L24/83 (EP,US);
H01L24/94 (EP);
H01L2221/68327 (EP,US);
H01L2224/27003 (EP);
H01L2224/27436 (EP,US);
H01L2224/29 (EP,US);
H01L2224/29101 (EP,US);
H01L2224/2919 (EP,US);
H01L2224/2929 (EP,US);
H01L2224/29386 (EP,US);
H01L2224/29499 (EP,US);
H01L2224/83191 (EP,US);
H01L2224/838 (EP,US);
H01L2224/94 (EP);
H01L2924/00013 (EP,US);
H01L2924/01005 (EP,US);
H01L2924/01006 (EP,US);
H01L2924/01012 (EP,US);
H01L2924/01013 (EP,US);
H01L2924/01015 (EP,US);
H01L2924/01019 (EP,US);
H01L2924/0102 (EP,US);
H01L2924/01021 (EP,US);
H01L2924/01027 (EP,US);
H01L2924/01033 (EP,US);
H01L2924/01051 (EP,US);
H01L2924/01059 (EP,US);
H01L2924/01072 (EP,US);
H01L2924/01078 (EP,US);
H01L2924/014 (EP,US);
H01L2924/0665 (EP,US);
H01L2924/12042 (EP,US);
H01L2924/181 (EP,US);
Y10T428/259 (EP,US);
Y10T428/2826 (EP,US);
Y10T428/2848 (EP,US)
(-)
| C-Set: |
C08F290/064, C08F222/10 (US,EP);
H01L2224/29101, H01L2924/014, H01L2924/00 (US,EP);
H01L2224/2929, H01L2924/0665, H01L2924/00014 (US,EP);
H01L2224/29386, H01L2924/05032, H01L2924/00014 (US,EP);
H01L2224/29386, H01L2924/05432, H01L2924/00014 (US,EP);
H01L2224/29386, H01L2924/05442, H01L2924/00014 (US,EP);
H01L2224/94, H01L2224/27 (EP);
H01L2924/00013, H01L2224/29099 (US,EP);
H01L2924/00013, H01L2224/29199 (EP,US);
H01L2924/00013, H01L2224/2929 (EP,US);
H01L2924/00013, H01L2224/29299 (EP,US);
H01L2924/0665, H01L2924/00 (US,EP);
H01L2924/12042, H01L2924/00 (US,EP);
H01L2924/181, H01L2924/00 (US,EP); | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR [2011/51] | Title | German: | FILM MIT SCHNEIDEBAHN ZUR FORMUNG EINER HALBLEITERSCHUTZFOLIE , VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS DAMIT UND HALBLEITERBAUELEMENT | [2011/51] | English: | SEMICONDUCTOR PROTECTION FILM-FORMING FILM WITH DICING SHEET, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE | [2011/51] | French: | FILM DE FORMATION DE FILM DE PROTECTION DE SEMI-CONDUCTEUR À FEUILLE DE DÉCOUPAGE EN DÉS, PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS L'UTILISANT ET DISPOSITIF À SEMI-CONDUCTEURS | [2011/51] | Entry into regional phase | 22.08.2011 | Translation filed | 22.08.2011 | National basic fee paid | 22.08.2011 | Search fee paid | 22.08.2011 | Designation fee(s) paid | 22.08.2011 | Examination fee paid | Examination procedure | 22.08.2011 | Examination requested [2011/51] | 14.12.2012 | Application withdrawn by applicant [2013/04] | Fees paid | Renewal fee | 23.02.2012 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [X]JP2002280329 (LINTEC CORP); | [A]JP2004043761 (HITACHI CHEMICAL CO LTD); | [Y]JP2004214288 (LINTEC CORP); | [X]JP2006140348 (LINTEC CORP); | [A]JP2007053240 (LINTEC CORP); | [Y]JP2008248128 (LINTEC CORP) | by applicant | JP2002280329 | JP2004214288 | JP2007250970 |