EP2639819 - METHOD FOR FORMING THERMAL OXIDE FILM OF MONOCRYSTALLINE SILICON WAFER [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 10.11.2017 Database last updated on 15.02.2019 | |
Former | The patent has been granted Status updated on 02.12.2016 | ||
Former | Grant of patent is intended Status updated on 28.11.2016 | Most recent event Tooltip | 15.06.2018 | Lapse of the patent in a contracting state New state(s): MC | published on 18.07.2018 [2018/29] | Applicant(s) | For all designated states Shin-Etsu Handotai Co., Ltd. 2-1, Ohtemachi 2-chome Chiyoda-ku Tokyo / JP | [2015/50] |
Former [2013/38] | For all designated states Shin-Etsu Handotai Co., Ltd. 6-2, Ohtemachi 2-chome Chiyoda-ku Tokyo 100-0004 / JP | Inventor(s) | 01 /
TAKAHASHI, Hiroyuki c/o Nagano Electronics Industrial Co. Ltd. 1393 Yashiro Chikuma-shi Nagano 387-8555 / JP | 02 /
YOSHIDA, Kazuhiko c/o Nagano Electronics Industrial Co. Ltd. 1393 Yashiro Chikuma-shi Nagano 387-8555 / JP | [2013/38] | Representative(s) | Wibbelmann, Jobst Wuesthoff & Wuesthoff Patentanwälte PartG mbB Schweigerstrasse 2 81541 München / DE | [2017/01] |
Former [2013/38] | Wibbelmann, Jobst Wuesthoff & Wuesthoff Patent- und Rechtsanwälte Schweigerstrasse 2 81541 München / DE | Application number, filing date | 11839425.3 | 06.10.2011 | [2017/01] | WO2011JP05626 | Priority number, date | JP20100251775 | 10.11.2010 Original published format: JP 2010251775 | [2013/38] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2012063402 | Date: | 18.05.2012 | Language: | JA | [2012/20] | Type: | A1 Application with search report | No.: | EP2639819 | Date: | 18.09.2013 | Language: | EN | [2013/38] | Type: | B1 Patent specification | No.: | EP2639819 | Date: | 04.01.2017 | Language: | EN | [2017/01] | Search report(s) | International search report - published on: | JP | 18.05.2012 | (Supplementary) European search report - dispatched on: | EP | 03.03.2014 | Classification | International: | H01L21/316, H01L21/02 | [2014/14] |
Former International [2013/38] | H01L21/316, H01L27/12 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2013/38] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES WÄRMEOXIDFILMS AUS EINEM MONOKRISTALLINEN SILICIUMWAFER | [2013/38] | English: | METHOD FOR FORMING THERMAL OXIDE FILM OF MONOCRYSTALLINE SILICON WAFER | [2013/38] | French: | PROCÉDÉ DE FORMATION D'UN FILM D'OXYDE THERMIQUE DE TRANCHE DE SILICIUM MONOCRISTALLIN | [2013/38] | Entry into regional phase | 06.05.2013 | Translation filed | 06.05.2013 | National basic fee paid | 06.05.2013 | Search fee paid | 06.05.2013 | Designation fee(s) paid | 06.05.2013 | Examination fee paid | Examination procedure | 06.05.2013 | Examination requested [2013/38] | 19.09.2014 | Amendment by applicant (claims and/or description) | 18.08.2016 | Communication of intention to grant the patent | 22.11.2016 | Fee for grant paid | 22.11.2016 | Fee for publishing/printing paid | 22.11.2016 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 18.08.2016 | Opposition(s) | 05.10.2017 | No opposition filed within time limit [2017/50] | Fees paid | Renewal fee | 17.10.2013 | Renewal fee patent year 03 | 20.10.2014 | Renewal fee patent year 04 | 20.10.2015 | Renewal fee patent year 05 | 20.10.2016 | Renewal fee patent year 06 | Lapses during opposition Tooltip | AT | 04.01.2017 | CZ | 04.01.2017 | DK | 04.01.2017 | EE | 04.01.2017 | ES | 04.01.2017 | FI | 04.01.2017 | HR | 04.01.2017 | IT | 04.01.2017 | LT | 04.01.2017 | LV | 04.01.2017 | MC | 04.01.2017 | NL | 04.01.2017 | PL | 04.01.2017 | RO | 04.01.2017 | RS | 04.01.2017 | SE | 04.01.2017 | SI | 04.01.2017 | SK | 04.01.2017 | SM | 04.01.2017 | BG | 04.04.2017 | NO | 04.04.2017 | GR | 05.04.2017 | IS | 04.05.2017 | PT | 04.05.2017 | [2018/29] |
Former [2018/14] | AT | 04.01.2017 | |
CZ | 04.01.2017 | ||
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EE | 04.01.2017 | ||
ES | 04.01.2017 | ||
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PT | 04.05.2017 | ||
Former [2017/48] | AT | 04.01.2017 | |
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BG | 04.04.2017 | ||
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GR | 05.04.2017 | ||
IS | 04.05.2017 | ||
PT | 04.05.2017 | ||
Former [2017/40] | AT | 04.01.2017 | |
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FI | 04.01.2017 | ||
HR | 04.01.2017 | ||
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PT | 04.05.2017 | Documents cited: | Search | [XIA]US5926741 (MATSUOKA TOSHIMASA [JP], et al) [X] 1-2 * column 10, line 50 - column 13, line 28; figures 2A-2C,6 * [I] 4-7 [A] 3,8; | [XA]US6797323 (KASHIWAGI AKIHIDE [JP], et al) [X] 1 * column 13, line 22 - page 14, line 5; figures 8-11 * [A] 2-8 | International search | [X]JPH11186255 (SONY CORP); | [Y]JP2008277702 (SHINETSU HANDOTAI KK, et al); | [A]JP2007053227 (MATSUSHITA ELECTRIC IND CO LTD); | [A]JP2002261094 (TOKYO ELECTRON LTD); | [A]JP2004064037 (SANYO ELECTRIC CO) | by applicant | JP2008277702 |