EP0132081 - Semiconductor laser device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 18.07.1988 Database last updated on 22.04.2025 | Most recent event Tooltip | 15.12.1988 | Lapse of the patent in a contracting state | published on 01.02.1989 [1989/05] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
Former [1985/04] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210, Tokyo / JP | Inventor(s) | 01 /
Motegi, Nawoto c/o Patent Divison Toshiba Corporation Principal Office 1-1, Shibaura 1-chome Minato-ku Tokyo / JP | 02 /
Okajima, Masaki c/o Patent Divison Toshiba Corporation Principal Office 1-1, Shibaura 1-chome Minato-ku Tokyo / JP | 03 /
Muto, Yuhei c/o Patent Divison Toshiba Corporation Principal Office 1-1, Shibaura 1-chome Minato-ku Tokyo / JP | [1985/04] | Representative(s) | Kirk, Geoffrey Thomas, et al BATCHELLOR, KIRK & CO. 102-108 Clerkenwell Road London EC1M 5SA / GB | [N/P] |
Former [1985/04] | Kirk, Geoffrey Thomas, et al BATCHELLOR, KIRK & CO. 2 Pear Tree Court Farringdon Road London EC1R 0DS / GB | Application number, filing date | 84304546.9 | 03.07.1984 | [1985/04] | Priority number, date | JP19830121371 | 04.07.1983 Original published format: JP 12137183 | [1985/04] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP0132081 | Date: | 23.01.1985 | Language: | EN | [1985/04] | Type: | A3 Search report | No.: | EP0132081 | Date: | 10.04.1985 | Language: | EN | [1985/15] | Type: | B1 Patent specification | No.: | EP0132081 | Date: | 09.09.1987 | Language: | EN | [1987/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.02.1985 | Classification | IPC: | H01S3/19, H01L33/00 | [1985/04] | CPC: |
H01S5/2231 (EP,US)
| Designated contracting states | DE, FR, GB, NL [1985/04] | Title | German: | Halbleiterlaser | [1985/04] | English: | Semiconductor laser device | [1985/04] | French: | Laser à semi-conducteur | [1985/04] | Examination procedure | 02.08.1985 | Examination requested [1985/43] | 30.07.1986 | Despatch of communication of intention to grant (Approval: ) | 25.09.1986 | Communication of intention to grant the patent | 28.11.1986 | Fee for grant paid | 28.11.1986 | Fee for publishing/printing paid | Opposition(s) | 10.06.1988 | No opposition filed within time limit [1988/36] | Fees paid | Renewal fee | 10.07.1986 | Renewal fee patent year 03 | 07.07.1987 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | NL | 09.09.1987 | [1989/05] | Documents cited: | Search | [Y]EP0042585 (HITACHI LTD [JP]); | [Y]GB2105099 (STANDARD TELEPHONES CABLES LTD [GB]) | [Y] - OPTICS COMMUNICATIONS vol. 40, no. 3, January 1982, Amsterdam, NL; S.R: CHINN et al. "TE modes of gruded-index large -optical-cavity waveguides", pages 179-184 | [A] - IEEE JOURNAL OF QUANTUM ELECTRONICS vol. QE-19, no. 7, July 1983, New York, USA; S. TURLEY "Optical waveguiding in (In, Ga)(As, P) inverted rib waveguide lasers at 1,3 mum wavelength", pages 1186-1195 | [AD] - APPLIED PHYSICS LETTERS vol. 37, no. 3, August 1980, New York, USA; J.J. COLEMAN et al "Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAl As-GaAs double-heterostructure lasers", pages 262-263 |