EP0471310 - MOS-type semiconductor integrated circuit device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.09.2005 Database last updated on 11.11.2024 | Most recent event Tooltip | 23.06.2006 | Lapse of the patent in a contracting state New state(s): FR | published on 26.07.2006 [2006/30] | Applicant(s) | For all designated states NEC Electronics Corporation 1753 Shimonumabe Nakahara-ku Kawasaki, Kanagawa 211-8668 / JP | [N/P] |
Former [2003/19] | For all designated states NEC Electronics Corporation 1753 Shimonumabe, Nakahara-ku Kawasaki, Kanagawa 211-8668 / JP | ||
Former [1992/08] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Ooka, Hideyuki, c/o NEC Corporation 7-1, Shiba 5-chome Minato-ku, Tokyo / JP | [1992/08] | Representative(s) | Betten & Resch Patent- und Rechtsanwälte PartGmbB Postfach 10 02 51 80076 München / DE | [N/P] |
Former [1992/08] | Betten & Resch Reichenbachstrasse 19 D-80469 München / DE | Application number, filing date | 91113424.5 | 09.08.1991 | [1992/08] | Priority number, date | JP19900211109 | 09.08.1990 Original published format: JP 21110990 | JP19900228688 | 29.08.1990 Original published format: JP 22868890 | [1992/08] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0471310 | Date: | 19.02.1992 | Language: | EN | [1992/08] | Type: | B1 Patent specification | No.: | EP0471310 | Date: | 24.11.2004 | Language: | EN | [2004/48] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 18.12.1991 | Classification | IPC: | H01L27/088, H01L27/02, H01L21/768 | [2004/01] | CPC: |
H01L27/0266 (EP,US);
H01L23/53257 (EP,US);
H01L27/088 (EP,US);
H01L29/41725 (EP,US);
H01L29/456 (EP,US);
H01L29/78 (EP,US);
H01L2924/0002 (EP,US)
(-)
| C-Set: |
H01L2924/0002, H01L2924/00 (EP,US)
|
Former IPC [1992/08] | H01L27/088, H01L27/02, H01L21/90 | Designated contracting states | DE, FR, GB [1992/08] | Title | German: | Integriertes Halbleiter-Schaltkreisbauelement vom MOS-Typ | [1992/08] | English: | MOS-type semiconductor integrated circuit device | [1992/08] | French: | Dispositif de circuit intégré a semi-conducteur du type MOS | [1992/08] | Miscellaneous | EPB 2004/46: (deleted) | EPB 2004/46: (deleted) | EPB 2004/46: (deleted) | EPB 1995/14: Teilanmeldung 95100770.7 eingereicht am 09/08/91 | EPB 1995/14: Divisional application 95100770.7 filed on 09/08/91 | EPB 1995/14: Demande divisionnaire 95100770.7 déposée le 09/08/91 | Examination procedure | 09.09.1991 | Examination requested [1992/08] | 07.07.1994 | Despatch of a communication from the examining division (Time limit: M06) | 13.01.1995 | Reply to a communication from the examining division | 01.03.1995 | Despatch of a communication from the examining division (Time limit: M04) | 03.07.1995 | Reply to a communication from the examining division | 14.10.1996 | Despatch of a communication from the examining division (Time limit: M06) | 24.04.1997 | Reply to a communication from the examining division | 03.03.1998 | Date of oral proceedings | 16.09.1998 | Despatch of communication that the application is refused, reason: substantive examination {1} | 16.09.1998 | Minutes of oral proceedings despatched | 18.11.2003 | Communication of intention to grant the patent | 05.03.2004 | Fee for grant paid | 05.03.2004 | Fee for publishing/printing paid | Appeal following examination | 26.11.1998 | Appeal received No. T0320/99 | 12.01.1999 | Statement of grounds filed | 26.09.2002 | Result of appeal procedure: remittal for grant | Divisional application(s) | EP95100770.7 / EP0654830 | Opposition(s) | 25.08.2005 | No opposition filed within time limit [2005/46] | Fees paid | Renewal fee | 27.08.1993 | Renewal fee patent year 03 | 29.08.1994 | Renewal fee patent year 04 | 29.08.1995 | Renewal fee patent year 05 | 29.08.1996 | Renewal fee patent year 06 | 27.08.1997 | Renewal fee patent year 07 | 28.08.1998 | Renewal fee patent year 08 | 31.08.1999 | Renewal fee patent year 09 | 31.08.2000 | Renewal fee patent year 10 | 31.08.2001 | Renewal fee patent year 11 | 02.09.2002 | Renewal fee patent year 12 | 29.08.2003 | Renewal fee patent year 13 | 31.08.2004 | Renewal fee patent year 14 |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FR | 24.11.2004 | DE | 25.02.2005 | [2006/30] |
Former [2006/13] | DE | 25.02.2005 | Documents cited: | Search | [Y]JP61207051 ; | [A]US4587718 (HAKEN ROGER A [US], et al); | [Y]US4657628 (HOLLOWAY THOMAS C [US], et al) | [Y] - PATENT ABSTRACTS OF JAPAN vol. 11, no. 41 (E-478)(2488), 6 February 1987; & JP - A - 61207051 (NEC) 13.09.1986, & JP61207051 A 19870206 | [AD] - IEDM December 1986, pages 484-487, Los Angeles, US; K.-L. CHEN et al.: "Electrostatic Discharge Protectioon for One Micron CMOS Devices and Circuits" |