EP0498169 - Opto-electronic device for coupling and uncoupling of radiation [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 25.10.1996 Database last updated on 22.04.2025 | Most recent event Tooltip | 25.10.1996 | No opposition filed within time limit | published on 11.12.1996 [1996/50] | Applicant(s) | For all designated states SIEMENS AKTIENGESELLSCHAFT Werner-von-Siemens-Str. 1 DE-80333 München / DE | [N/P] |
Former [1992/33] | For all designated states SIEMENS AKTIENGESELLSCHAFT Wittelsbacherplatz 2 D-80333 München / DE | Inventor(s) | 01 /
Stegmüller, Bernhard, Dr. Ing. Seefelderstrasse 18 W-8900 Augsburg / DE | 02 /
Franz, Gerhard, Dr. Dipl.-Chem. Wilhelm-Kuhnert-Strasse 2 W-8000 München 90 / DE | 03 /
Heinen, Jochen, Dr. Ing. Dianastrasse 38 W-8013 Haar / DE | [1992/33] | Application number, filing date | 92100524.5 | 14.01.1992 | [1992/33] | Priority number, date | DE19914103930 | 08.02.1991 Original published format: DE 4103930 | [1992/33] | Filing language | DE | Procedural language | DE | Publication | Type: | A1 Application with search report | No.: | EP0498169 | Date: | 12.08.1992 | Language: | DE | [1992/33] | Type: | B1 Patent specification | No.: | EP0498169 | Date: | 20.12.1995 | Language: | DE | [1995/51] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.04.1992 | Classification | IPC: | G02B6/30, G02B6/42 | [1992/33] | CPC: |
G02B6/1245 (EP,US);
G02B6/30 (EP,US);
G02B6/42 (EP,US);
G02B6/4204 (EP,US);
G02B6/4214 (EP,US)
| Designated contracting states | DE, FR, GB, IT [1992/33] | Title | German: | Optoelektronisches Bauelement zum Aus- und Einkoppeln von Strahlung | [1992/33] | English: | Opto-electronic device for coupling and uncoupling of radiation | [1992/33] | French: | Composant opto-électronique pour couplage et découplage de rayonnement | [1992/33] | Miscellaneous | EPB 1995/51: Teilanmeldung 95103073.3 eingereicht am 14/01/92 | EPB 1995/51: Divisional application 95103073.3 filed on 14/01/92 | EPB 1995/51: Demande divisionnaire 95103073.3 déposée le 14/01/92 | Examination procedure | 03.09.1992 | Examination requested [1992/44] | 21.02.1994 | Despatch of a communication from the examining division (Time limit: M04) | 09.06.1994 | Reply to a communication from the examining division | 12.10.1994 | Despatch of a communication from the examining division (Time limit: M06) | 03.03.1995 | Reply to a communication from the examining division | 22.05.1995 | Despatch of communication of intention to grant (Approval: Yes) | 22.06.1995 | Communication of intention to grant the patent | 15.09.1995 | Fee for grant paid | 15.09.1995 | Fee for publishing/printing paid | Divisional application(s) | EP95103073.3 / EP0658784 | Opposition(s) | 21.09.1996 | No opposition filed within time limit [1996/50] | Fees paid | Renewal fee | 19.01.1994 | Renewal fee patent year 03 | 19.01.1995 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP1307707 ; | [A]US4163953 (DYMENT JOHN C [CA], et al); | [A]EP0164834 (PLESSEY OVERSEAS [GB]); | [A]DE3914835 | [X] - PATENT ABSTRACTS OF JAPAN vol. 14, no. 104 (P-1013)26. Februar 1990 & JP-A-1 307 707 ( NIPPON TELEGRAPH & TELEPHONE CORP. ) 12. Dezember 1989, & JP1307707 A 00000000 | [XD] - APPLIED PHYSICS LETTERS. Bd. 56, Nr. 13, 26. März 1990, NEW YORK US Seiten 1219 - 1221; LIAU ET AL.: 'GaInAsP / InP buried-heterostructure surface-emitting diode laser with monolithic integrated bifocal microlens' |