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EP0642155
European procedure
Extract from the Register of European Patents
EP About this file: EP0642155
| EP0642155 - Method of manufacturing semiconductor capacitor electrode [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 15.03.2002 Database last updated on 26.04.2025 | Most recent event Tooltip | 15.03.2002 | No opposition filed within time limit | published on 02.05.2002 [2002/18] | Applicant(s) | For all designated states NEC Corporation 7-1, Shiba 5-chome Minato-ku Tokyo 108-8001 / JP | [N/P] |
| Former [2001/19] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | ||
| Former [1995/10] | For all designated states NEC CORPORATION 7-1, Shiba 5-chome Minato-ku Tokyo / JP | Inventor(s) | 01 /
Toshiyuki, Hirota, c/o NEC Corporation 7-1, Shiba 5-chome, Minato-ku Tokyo / JP | [1995/10] | Representative(s) | Glawe, Delfs, Moll Partnerschaft mbB von Patent- und Rechtsanwälten Postfach 26 01 62 80058 München / DE | [N/P] |
| Former [1995/10] | Glawe, Delfs, Moll & Partner Patentanwälte Postfach 26 01 62 D-80058 München / DE | Application number, filing date | 94113762.2 | 02.09.1994 | [1995/10] | Priority number, date | JP19930219370 | 03.09.1993 Original published format: JP 21937093 | [1995/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP0642155 | Date: | 08.03.1995 | Language: | EN | [1995/10] | Type: | B1 Patent specification | No.: | EP0642155 | Date: | 09.05.2001 | Language: | EN | [2001/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 14.12.1994 | Classification | IPC: | H01L21/3205, H01L27/108 | [1995/10] | CPC: |
H01L21/32134 (EP,US);
H10D1/712 (EP,KR,US);
H10B12/01 (EP,US);
Y10S438/964 (EP,US)
| Designated contracting states | DE, FR, GB [1995/10] | Title | German: | Verfahren zur Herstellung einer Halbleiter-Kondensator-Elektrode | [1995/10] | English: | Method of manufacturing semiconductor capacitor electrode | [1995/10] | French: | Procédé de manufacture d'une élctrode de condensateur semi-conducteur | [1995/10] | Examination procedure | 27.01.1995 | Examination requested [1995/13] | 18.07.1996 | Despatch of a communication from the examining division (Time limit: M04) | 27.11.1996 | Reply to a communication from the examining division | 18.09.1997 | Despatch of a communication from the examining division (Time limit: M06) | 30.03.1998 | Reply to a communication from the examining division | 14.08.2000 | Despatch of communication of intention to grant (Approval: Yes) | 02.10.2000 | Communication of intention to grant the patent | 03.01.2001 | Fee for grant paid | 03.01.2001 | Fee for publishing/printing paid | Opposition(s) | 12.02.2002 | No opposition filed within time limit [2002/18] | Fees paid | Renewal fee | 19.09.1996 | Renewal fee patent year 03 | 19.09.1997 | Renewal fee patent year 04 | 21.09.1998 | Renewal fee patent year 05 | 20.09.1999 | Renewal fee patent year 06 | 20.09.2000 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JPH04365369 ; | [X]EP0553791 (NEC CORP [JP]); | [X]EP0557590 (SAMSUNG ELECTRONICS CO LTD [KR]); | [PX]EP0572943 (IBM [US]) |