blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...
blank News flashes

News flashes

New version of the European Patent Register - SPC information for Unitary Patents.

2024-03-06

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
FAQ - Register Alert
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP0949731

EP0949731 - Nitride semiconductor laser device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  11.01.2003
Database last updated on 23.04.2024
Most recent event   Tooltip17.10.2008Change - applicantpublished on 19.11.2008  [2008/47]
Applicant(s)For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma Kadoma-shi Osaka
571-8501 / JP
[2008/47]
Former [2001/37]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma
Kadoma-shi, Osaka / JP
Former [1999/41]For all designated states
Matsushita Electronics Corporation
1-1, Saiwai-cho
Takatsuki-shi, Osaka 569-1193 / JP
Inventor(s)01 / Itoh, Kunio
78-1, Kowata-minamiyama
Uji-shi, Kyoto 611-0002 / JP
02 / Yuri, Masaaki
6-26-1201, Funaki-cho
Ibaraki-shi, Osaka 567-0828 / JP
03 / Hashimoto, Tadao
1-23-2-202, Suido-cho
Amagasaki-shi, Hyogo 661-0026 / JP
04 / Ishida, Masahiro
24-6, Ikaga-nishimachi
Hirakata-shi, Osaka 573-0066 / JP
[1999/41]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [1999/41]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Maximilianstrasse 58
80538 München / DE
Application number, filing date99106798.406.04.1999
[1999/41]
Priority number, dateJP1998009308606.04.1998         Original published format: JP 9308698
JP1998013944321.05.1998         Original published format: JP 13944398
JP1998014899629.05.1998         Original published format: JP 14899698
[1999/41]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP0949731
Date:13.10.1999
Language:EN
[1999/41]
Type: A3 Search report 
No.:EP0949731
Date:26.01.2000
[2000/04]
Type: B1 Patent specification 
No.:EP0949731
Date:06.03.2002
Language:EN
[2002/10]
Search report(s)(Supplementary) European search report - dispatched on:EP10.12.1999
ClassificationIPC:H01S5/323, H01S5/343, H01S5/028
[2001/17]
CPC:
B82Y20/00 (EP,US); H01S5/0281 (EP,US); H01S5/0287 (EP,US);
H01S5/10 (EP,US); H01S5/34333 (EP,US)
Former IPC [1999/41]H01S3/19, H01S3/025
Designated contracting statesDE,   FR,   GB [2000/40]
Former [1999/41]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Halbleiterlaser aus einer Nitridverbindung[1999/41]
English:Nitride semiconductor laser device[1999/41]
French:Laser à semi-conducteur comprenant un composè de nitrure[1999/41]
Examination procedure26.06.2000Examination requested  [2000/34]
11.05.2001Despatch of communication of intention to grant (Approval: Yes)
13.09.2001Communication of intention to grant the patent
27.11.2001Fee for grant paid
27.11.2001Fee for publishing/printing paid
Opposition(s)09.12.2002No opposition filed within time limit [2003/09]
Fees paidRenewal fee
26.04.2001Renewal fee patent year 03
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]JPH03209895  ;
 [A]JPS61134094  ;
 [A]JPH04208585  ;
 [A]JPH06268327  ;
 [A]JPS599989  ;
 [A]JPS5889890  ;
 [A]JPH08191171  ;
 [A]JPH02137287  ;
 [A]US5321713  (KHAN MUHAMMAD A [US], et al) [A] 1,3,5 * column 6, line 61 - column 7, line 30 * * column 8, line 11 - column 8, line 45; figures 3,5 *;
 [A]  - NAKAMURA S, "RT-CW Operation of InGaN multi-quantum-well structure laser diodes", MATERIALS SCIENCE AND ENGINEERING B,CH,ELSEVIER SEQUOIA, LAUSANNE, vol. 50, no. 1-3, ISSN 0921-5107, page 277-284, XP004119149 [A] 1,3 * page 279; figure 3 *

DOI:   http://dx.doi.org/10.1016/S0921-5107(97)00190-6
 [A]  - PATENT ABSTRACTS OF JAPAN, (19911206), vol. 015, no. 482, Database accession no. (E - 1142), & JP03209895 A 19910912 (ALPS ELECTRIC CO LTD;OTHERS: 02) [A] 1,6,10 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19861108), vol. 010, no. 329, Database accession no. (E - 452), & JP61134094 A 19860621 (NEC CORP) [A] 1,6,7 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19921119), vol. 016, no. 550, Database accession no. (E - 1292), & JP04208585 A 19920730 (FUJITSU LTD) [A] 1 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19941219), vol. 018, no. 673, Database accession no. (E - 1647), & JP06268327 A 19940922 (HITACHI LTD) [A] 1 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19840426), vol. 008, no. 091, Database accession no. (E - 241), & JP59009989 A 19840119 (MATSUSHITA DENKI SANGYO KK) [A] 1 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19830816), vol. 007, no. 186, Database accession no. (E - 193), & JP58089890 A 19830528 (HITACHI SEISAKUSHO KK) [A] 1 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19961129), vol. 1996, no. 11, & JP08191171 A 19960723 (NICHIA CHEM IND LTD) [A] 1 * abstract *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19900813), vol. 014, no. 374, Database accession no. (E - 0964), & JP02137287 A 19900525 (SANYO ELECTRIC CO LTD) [A] 1 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.