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Extract from the Register of European Patents

EP About this file: EP1154475

EP1154475 - Semiconductor device and semiconductor device manufacturing method [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  17.11.2006
Database last updated on 22.08.2024
Most recent event   Tooltip06.06.2008Change - representativepublished on 09.07.2008  [2008/28]
Applicant(s)For all designated states
Oki Electric Industry Co., Ltd.
7-12, Toranomon 1-chome Minato-ku
Tokyo / JP
[N/P]
Former [2001/46]For all designated states
Oki Electric Industry Co., Ltd.
7-12, Toranomon 1-chome Minato-ku
Tokyo / JP
Inventor(s)01 / Nakamura, Akio
Oki Electric Industry, 7-12, Toranomon 1-chome
Minato-ku, Tokyo / JP
 [2001/46]
Representative(s)Kirschner, Klaus Dieter, et al
Puschmann Borchert Bardehle
Patentanwälte Partnerschaft
Postfach 10 12 31
80086 München / DE
[N/P]
Former [2008/28]Kirschner, Klaus Dieter, et al
Puschmann & Borchert Patentanwälte Bajuwarenring 21
82041 Oberhaching / DE
Former [2006/40]Kirschner, Klaus Dieter, et al
Kirschner Patentanwaltskanzlei Südliche Münchnerstrasse 53
82031 Grünwald / DE
Former [2001/46]Kirschner, Klaus Dieter, Dipl.-Phys.
Schneiders & Behrendt Rechtsanwälte - Patentanwälte Sollner Strasse 38
81479 München / DE
Application number, filing date00109918.310.05.2000
[2001/46]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1154475
Date:14.11.2001
Language:EN
[2001/46]
Search report(s)(Supplementary) European search report - dispatched on:EP08.11.2000
ClassificationIPC:H01L23/31
[2001/46]
CPC:
H01L23/3114 (EP); H01L2224/023 (EP); H01L2224/05569 (EP);
H01L2224/05573 (EP); H01L2224/06135 (EP); H01L2224/16 (EP);
H01L2224/274 (EP); H01L29/0657 (EP); H01L2924/01078 (EP);
H01L2924/10157 (EP) (-)
C-Set:
H01L2224/023, H01L2924/0001 (EP)
Designated contracting statesDE,   FR,   GB [2002/31]
Former [2001/46]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE 
TitleGerman:Halbleiterelement und Halbleiterelement-Herstellungsverfahren[2001/46]
English:Semiconductor device and semiconductor device manufacturing method[2001/46]
French:Elément semi-conducteur et méthode de fabrication d'un élément semi-conducteur[2001/46]
Examination procedure14.05.2002Examination requested  [2002/29]
21.02.2005Despatch of a communication from the examining division (Time limit: M04)
23.06.2005Reply to a communication from the examining division
20.02.2006Communication of intention to grant the patent
04.07.2006Application deemed to be withdrawn, date of legal effect  [2006/51]
04.08.2006Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2006/51]
Fees paidRenewal fee
31.05.2002Renewal fee patent year 03
02.06.2003Renewal fee patent year 04
01.06.2004Renewal fee patent year 05
31.05.2005Renewal fee patent year 06
27.04.2006Renewal fee patent year 07
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Documents cited:Search[XA]US5977641  (TAKAHASHI TAKUYA [JP], et al) [X] 1-3 * the whole document * [A] 4,7,10;
 [X]JPH11224890  ;
 [A]US5989982  (YOSHIKAZU TAKAHASHI [JP]) [A] 1,3,7,10 * the whole document *
 [X]  - PATENT ABSTRACTS OF JAPAN, (19991130), vol. 1999, no. 13, & JP11224890 A 19990817 (MITSUI HIGH TEC INC) [X] 1 * the whole document *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.