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EP1184671
European procedure
Extract from the Register of European Patents
EP About this file: EP1184671
| EP1184671 - Power detector using FET transistor [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 12.10.2007 Database last updated on 14.06.2024 | Most recent event Tooltip | 12.10.2007 | No opposition filed within time limit | published on 14.11.2007 [2007/46] | Applicant(s) | For all designated states Sony Deutschland GmbH Kemperplatz 1 10785 Berlin / DE | For all designated states Sony Corporation 6-7-35 Kitashinagawa Shinagawa-ku Tokyo 141-0001 / JP | [N/P] |
| Former [2006/49] | For all designated states Sony Deutschland GmbH Kemperplatz 1 10785 Berlin / DE | ||
| For all designated states SONY CORPORATION 6-7-35 Kitashinagawa Shinagawa-ku Tokyo 141-0001 / JP | |||
| Former [2006/05] | For all designated states Sony Deutschland GmbH Kemperplatz 1 10785 Berlin / DE | ||
| For all designated states Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku Tokyo 141-0001 / JP | |||
| Former [2005/51] | For all designated states Sony Deutschland GmbH Hugo-Eckener-Strasse 20 50829 Köln / DE | ||
| For all designated states Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku Tokyo 141-0001 / JP | |||
| Former [2005/40] | For all designated states SONY DEUTSCHLAND GMBH Kemperplatz 1 10785 Berlin / DE | ||
| For all designated states Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku Tokyo 141-0001 / JP | |||
| Former [2002/10] | For all designated states Sony International (Europe) GmbH Kemperplatz 1 10785 Berlin / DE | ||
| For all designated states Sony Corporation 6-7-35 Kitashinagawa, Shinagawa-ku Tokyo 141-0001 / JP | Inventor(s) | 01 /
Ratni, Mohamed, Advanced Technology Center Stuttgart, Sony International (Europe) GmbH Hedelfinger Strasse 61, 70327 Stuttgart / DE | 02 /
Brankovic, Veselin, Advanced Technology Center Stuttgart, Sony International (Europe) GmbH Hedelfinger Strasse 61, 70327 Stuttgart / DE | 03 /
Krupezevic, Dragan, Advanced Technology Center Stuttgart, Sony International (Europe) GmbH Hedelfinger Strasse 61, 70327 Stuttgart / DE | 04 /
Abe, Masayoshi, Sony Corp. 6-7-35 Kitashinagawa Shinagawa-ku, Tokyo 141-0001 / JP | 05 /
Sasho, Noboru, Sony Corp. 6-7-35 Kitashinagawa Shinagawa-ku, Tokyo 141-0001 / JP | [2002/10] | Representative(s) | Rupp, Christian, et al Mitscherlich PartmbB Patent- und Rechtsanwälte Postfach 33 06 09 80066 München / DE | [N/P] |
| Former [2002/10] | Rupp, Christian, Dipl.-Phys., et al Mitscherlich & Partner, Patent- und Rechtsanwälte, Postfach 33 06 09 80066 München / DE | Application number, filing date | 00118419.1 | 24.08.2000 | [2002/10] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1184671 | Date: | 06.03.2002 | Language: | EN | [2002/10] | Type: | B1 Patent specification | No.: | EP1184671 | Date: | 06.12.2006 | Language: | EN | [2006/49] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.01.2001 | Classification | IPC: | G01R21/10 | [2002/10] | CPC: |
G01R21/10 (EP,US);
G01R27/28 (KR)
| Designated contracting states | DE, FI, FR, GB, SE [2002/50] |
| Former [2002/48] | FI, FR, GB, SE | ||
| Former [2002/10] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE | Title | German: | FET-Transistor mit Leistungsdetektor | [2006/30] | English: | Power detector using FET transistor | [2002/10] | French: | Detecteur de puissance à transistor FET | [2002/10] |
| Former [2002/10] | FET-Transistor verwenderder Leistungsdetektor | Examination procedure | 09.04.2002 | Examination requested [2002/24] | 07.09.2002 | Loss of particular rights, legal effect: designated state(s) | 09.01.2003 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, GR, IE, IT, LU, MC, NL, PT | 29.08.2005 | Despatch of a communication from the examining division (Time limit: M04) | 10.11.2005 | Reply to a communication from the examining division | 19.07.2006 | Communication of intention to grant the patent | 20.10.2006 | Fee for grant paid | 20.10.2006 | Fee for publishing/printing paid | Opposition(s) | 07.09.2007 | No opposition filed within time limit [2007/46] | Fees paid | Renewal fee | 30.08.2002 | Renewal fee patent year 03 | 29.08.2003 | Renewal fee patent year 04 | 12.08.2004 | Renewal fee patent year 05 | 12.08.2005 | Renewal fee patent year 06 | 14.08.2006 | Renewal fee patent year 07 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 14.10.2002 | AT M01 Not yet paid | 14.10.2002 | BE M01 Not yet paid | 14.10.2002 | CH M01 Not yet paid | 14.10.2002 | CY M01 Not yet paid | 14.10.2002 | DK M01 Not yet paid | 14.10.2002 | ES M01 Not yet paid | 14.10.2002 | GR M01 Not yet paid | 14.10.2002 | IE M01 Not yet paid | 14.10.2002 | IT M01 Not yet paid | 14.10.2002 | LU M01 Not yet paid | 14.10.2002 | MC M01 Not yet paid | 14.10.2002 | NL M01 Not yet paid | 14.10.2002 | PT M01 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | FI | 06.12.2006 | SE | 06.03.2007 | [2007/25] | Documents cited: | Search | [XA]US5079454 (BENTON ROBERT H [US], et al) [X] 6,7,9 * column 3, line 27 - line 53; figure 2 * [A] 10; | [A]US4431965 (ASLAN EDWARD E [US]) [A] 1,6,10 * column 3, line 49 - column 4, line 27; figure 3 * | [DXA] - RATNI M ET AL, "RF POWER DETECTOR USING A SILICON MOSFET", IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST,US,NEW YORK, NY: IEEE, (19980607), ISBN 0-7803-4472-3, pages 1139 - 1142, XP000822162 [DX] 1,3,5,6,8 * page 1139, column 2, line 25 - page 1140, column 2, line 16; figures 1B,2 * [A] 10 |