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Extract from the Register of European Patents

EP About this file: EP1132924

EP1132924 - Self-testing of magneto-resistive memory arrays [Right-click to bookmark this link]
Status	The application has been withdrawn Status updated on 10.02.2006 Database last updated on 17.05.2024
Most recent event Tooltip	10.02.2006	Withdrawal of application	published on 29.03.2006 [2006/13]
Applicant(s)	For all designated states Hewlett-Packard Company 3000 Hanover Street Palo Alto, CA 94304 / US
	[N/P]
Former [2001/37]	For all designated states Hewlett-Packard Company, A Delaware Corporation 3000 Hanover Street Palo Alto, CA 94304 / US
Inventor(s)	01 / Perner, Frederick A. 3234 Ramona Street Palo Alto, CA 94306 / US
	02 / Eldredge, Kenneth J. 11111 Camas Street Boise, IL 83709 / US
	03 / Tran, Lung 5085 Woodbrae Court Saratoga, CA 95070 / US
	[2001/37]
Representative(s)	Schoppe, Fritz Schoppe, Zimmermann, Stöckeler & Zinkler Patentanwälte Postfach 246 82043 Pullach bei München / DE
	[N/P]
Former [2001/37]	Schoppe, Fritz, Dipl.-Ing. Schoppe, Zimmermann & Stöckeler Patentanwälte Postfach 71 08 67 81458 München / DE
Application number, filing date	00122088.8	11.10.2000
	[2001/37]
Priority number, date	US20000498588	04.02.2000 Original published format: US 498588
	[2001/37]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1132924
	Date:	12.09.2001
	Language:	EN
	[2001/37]
	Type:	A3 Search report
	No.:	EP1132924
	Date:	04.12.2002
	[2002/49]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	21.10.2002
Classification	IPC:	G11C29/00	[2001/37]
	CPC:	G11C29/50 (EP,US); G11C29/02 (EP,US); G11C29/44 (EP,US); G11C27/02 (EP,US)
Designated contracting states	DE, FR, GB [2003/35]
Former [2001/37]	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
Title	German:	Selbsttest von Magnetoresistivenspeicheranordnungen	[2001/37]
	English:	Self-testing of magneto-resistive memory arrays	[2001/37]
	French:	Autotest de matrices de mémoires magnétoresistives	[2001/37]
Examination procedure	03.06.2003	Examination requested [2003/32]
	06.02.2006	Application withdrawn by applicant [2006/13]
Fees paid	Renewal fee
	21.10.2002	Renewal fee patent year 03
	23.10.2003	Renewal fee patent year 04
	25.10.2004	Renewal fee patent year 05
	27.10.2005	Renewal fee patent year 06
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]JPS57191900 ;
		[A]US3655959 (CHERNOW GARY ALLEN, et al) [A] 1-10 * column 4, line 1 - column 5, line 42 * * column 14, line 27 - line 66; figure 6 *;
		[A]US3712537 (CARITA E) [A] 1-10 * page 7 *;
		[A]US4718042 (MOLL MAURICE M [US], et al) [A] 1-10 * abstract * * column 5, line 4 - line 50; figure 1; claims 6,7 *;
		[XA]US5930164 (ZHU THEODORE [US]) [X] 1 * column 3, line 3 - line 12 * * column 3, line 65 - column 4, line 18 * * column 4, line 57 - line 67; figures 2,3,5; claims 20,21 * [A] 2-10;
		[A]US5952833 (MORGAN DONALD M [US]) [A] 1-10 * column 1, line 56 - line 61 * * column 5, line 23 - line 49 * * column 7, line 23 - line 44 * * column 9, lines 5-9; figures 2,5; claims 2,3 *;
		[XA] - BOEVE H ET AL, "Technology assessment for MRAM cells with magnet/semiconductor bits", IEEE TRANSACTIONS ON MAGNETICS, (199909), vol. 35, no. 5, pages 2820 - 2825, XP010502009 [X] 1 * abstract * * page 2821, paragraph II.A. * * page 2823, column 2, paragraph 4 * [A] 2-10
		[A] - PATENT ABSTRACTS OF JAPAN, (19830219), vol. 007, no. 042, Database accession no. (P - 177), & JP57191900 A 19821125 (HITACHI SEISAKUSHO KK;OTHERS: 01) [A] 1-10 * abstract *
		[PXA] - RUILI ZHANG ET AL, "Windowed MRAM sensing scheme", MEMORY TECHNOLOGY, DESIGN AND TESTING, 2000. RECORDS OF THE 2000 IEEE INTERNATIONAL WORKSHOP, San Jose, CA, USA, (20000807), pages 48 - 55, XP010511375 [PX] 1 * page 48, column 2, paragraph 2 * [PA] 2-10

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