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EP About this file: EP1209752

EP1209752 - SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 06.07.2012 Database last updated on 05.08.2024
Most recent event Tooltip	03.05.2013	Lapse of the patent in a contracting state New state(s): FR	published on 05.06.2013 [2013/23]
Applicant(s)	For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 7-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310 / JP
	[2006/18]
Former [2002/22]	For all designated states MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, Marunouchi 2-chome, Chiyoda-ku Tokyo 100-8310 / JP
Inventor(s)	01 / HARUGUCHI, Hideki c/o Mitsubishi Denki K.K. Z-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310 / JP
	02 / TOMOMATSU, Yoshihumi Fukuryo Semi-Con Eng. Corp. 1-1, Imajuku-higashi 1-chome Nishi-ku Fukuoka-shi Fukuoka 819-0161 / JP
	[2011/35]
Former [2011/31]	01 / HARUGUCHI, Hideki Mitsubishi Denki K.K. Z-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310 / JP
	02 / TOMOMATSU, Yoshihumi Fukuryo Semi-Con Eng. Corp. 1-1, Imajuku-higashi 1-chome Nishi-ku Fukuoka-shi Fukuoka 819-0161 / JP
Former [2002/22]	01 / HARUGUCHI, Hideki Mitsubishi Denki K.K. 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310 / JP
	02 / TOMOMATSU, Yoshihumi Fukuryo Semi-Con Eng. Corp. 1-1, Imajuku-higashi 1-chome Nishi-ku Fukuoka-shi Fukuoka 819-0161 / JP
Representative(s)	Sajda, Wolf E., et al Meissner Bolte Patentanwälte Rechtsanwälte Partnerschaft mbB Postfach 86 06 24 81633 München / DE
	[N/P]
Former [2002/22]	Sajda, Wolf E., Dipl.-Phys., et al MEISSNER, BOLTE & PARTNER Postfach 86 06 24 81633 München / DE
Application number, filing date	00929818.3	22.05.2000
	[2002/22]
	WO2000JP03238
Filing language	JA
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO0191191
	Date:	29.11.2001
	Language:	EN
	[2001/48]
	Type:	A1 Application with search report
	No.:	EP1209752
	Date:	29.05.2002
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 29.11.2001 takes the place of the publication of the European patent application.
	[2002/22]
	Type:	B1 Patent specification
	No.:	EP1209752
	Date:	31.08.2011
	Language:	EN
	[2011/35]
Search report(s)	International search report - published on:	JP	29.11.2001
	(Supplementary) European search report - dispatched on:	EP	18.12.2007
Classification	IPC:	H01L29/78	[2002/22]
	CPC:	H01L29/7395 (EP,US); H01L29/78 (KR); H01L29/0696 (EP,US); H01L29/42368 (EP,US)
Designated contracting states	CH, DE, FR, GB, LI [2004/20]
Former [2002/22]	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE
Title	German:	HALBLEITERBAUELEMENT	[2002/22]
	English:	SEMICONDUCTOR DEVICE	[2002/22]
	French:	DISPOSITIF SEMI-CONDUCTEUR	[2002/22]
Entry into regional phase	21.01.2002	Translation filed
	21.01.2002	National basic fee paid
	21.01.2002	Search fee paid
	21.01.2002	Designation fee(s) paid
	21.01.2002	Examination fee paid
Examination procedure	21.01.2002	Amendment by applicant (claims and/or description)
	21.01.2002	Examination requested [2002/22]
	17.03.2008	Despatch of a communication from the examining division (Time limit: M04)
	22.07.2008	Reply to a communication from the examining division
	22.07.2009	Despatch of a communication from the examining division (Time limit: M04)
	01.12.2009	Reply to a communication from the examining division
	11.02.2011	Communication of intention to grant the patent
	21.06.2011	Fee for grant paid
	21.06.2011	Fee for publishing/printing paid
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 17.03.2008
Opposition(s)	01.06.2012	No opposition filed within time limit [2012/32]
Fees paid	Renewal fee
	21.01.2002	Renewal fee patent year 03
	27.05.2003	Renewal fee patent year 04
	27.05.2004	Renewal fee patent year 05
	30.05.2005	Renewal fee patent year 06
	28.03.2006	Renewal fee patent year 07
	25.05.2007	Renewal fee patent year 08
	28.03.2008	Renewal fee patent year 09
	27.05.2009	Renewal fee patent year 10
	30.03.2010	Renewal fee patent year 11
	30.05.2011	Renewal fee patent year 12
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition Tooltip	GB	22.05.2012
	CH	31.05.2012
	FR	31.05.2012
	LI	31.05.2012
	[2013/23]
Former [2013/21]	GB	22.05.2012
	CH	31.05.2012
	LI	31.05.2012
Former [2013/07]	CH	31.05.2012
	LI	31.05.2012
Documents cited:	Search	[A]EP0615293 (MITSUBISHI ELECTRIC CORP [JP]) [A] 1-10* page 10, line 29 - page 11, line 54; figure 4 *;
		[XY]EP0801425 (MITSUBISHI ELECTRIC CORP [JP]) [X] 1-4 * column 10, line 50 - column 16, line 34; figures 1-4 * [Y] 5-8;
		[A]US5703383 (NAKAYAMA KAZUYA [JP]) [A] 1-10 * the whole document *;
		[Y]DE19750413 (ASEA BROWN BOVERI [CH]) [Y] 7,8 * column 4, line 49 - column 6, line 21 *;
		[Y]WO9938214 (MITSUBISHI ELECTRIC CORP [JP], et al) [Y] 5-8 * page 4 - page 6; figures 1,4,17 *;
		[E]EP1050908 (MITSUBISHI ELECTRIC CORP [JP]) [E] 5-8;
		[A] - MAJUMDAR G ET AL, "ACTIVE SURGE VOLTAGE CLAMPED 600A IPM FOR HIGH POWER APPLICATION", PROCEEDINGS OF THE 7TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC'S. (ISPSD). YOKOHAMA, MAY 23 - 25, 1995, PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC'S. (ISPSD), NEW YORK, IEEE, US, (19950523), vol. SYMP. 7, ISBN 0-7803-2619-9, pages 75 - 79, XP000594243 [A] 1-10 * figure 4 * DOI: http://dx.doi.org/10.1109/ISPSD.1995.515012
	International search	[A]US4532534 (FORD RAYMOND T [US], et al);
		[A]JPH01207977 (NEC CORP);
		[A]US5169793 (OKABE NAOTO [JP], et al);
		[A]US5208471 (MORI MUTSUHIRO [JP], et al);
		[A]JPH1187702 (MITSUBISHI ELECTRIC CORP)

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