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EP1136920
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EP About this file: EP1136920
| EP1136920 - Electric characteristic evaluating apparatus for a semiconductor device [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 04.05.2007 Database last updated on 30.10.2024 | Most recent event Tooltip | 04.05.2007 | Application deemed to be withdrawn | published on 06.06.2007 [2007/23] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 72, Horikawa-cho, Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 / JP | [N/P] |
| Former [2001/39] | For all designated states KABUSHIKI KAISHA TOSHIBA 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210-8572 / JP | Inventor(s) | 01 /
Tanimoto, Hiroyoshi, Intellectual Prop. Division Toshiba Corporation, 1-1-1, Shibaura, Minato-ku Tokyo / JP | [2001/39] | Representative(s) | Hoffmann Eitle Patent- und Rechtsanwälte PartmbB Arabellastrasse 30 81925 München / DE | [N/P] |
| Former [2001/39] | HOFFMANN - EITLE Patent- und Rechtsanwälte Arabellastrasse 4 81925 München / DE | Application number, filing date | 01102840.4 | 13.02.2001 | [2001/39] | Priority number, date | JP20000085050 | 24.03.2000 Original published format: JP 2000085050 | [2001/39] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1136920 | Date: | 26.09.2001 | Language: | EN | [2001/39] | Type: | A3 Search report | No.: | EP1136920 | Date: | 25.05.2005 | [2005/21] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.04.2005 | Classification | IPC: | G06F17/50 | [2001/39] | CPC: |
G06F30/23 (EP,US);
H01L22/00 (KR);
G06F2111/10 (EP,US)
| Designated contracting states | DE, FR [2006/07] |
| Former [2001/39] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Apparat zum Auswerten einer elektrischen Kenngrösse für Halbleiterbausteine | [2001/39] | English: | Electric characteristic evaluating apparatus for a semiconductor device | [2001/39] | French: | Appareil pour évaluer une caractéristique électrique d'un dispositif à semi-conducteur | [2001/39] | Examination procedure | 13.02.2001 | Examination requested [2001/39] | 07.08.2006 | Despatch of a communication from the examining division (Time limit: M04) | 19.12.2006 | Application deemed to be withdrawn, date of legal effect [2007/23] | 19.01.2007 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2007/23] | Fees paid | Renewal fee | 12.02.2003 | Renewal fee patent year 03 | 12.02.2004 | Renewal fee patent year 04 | 14.02.2005 | Renewal fee patent year 05 | 14.02.2006 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 28.02.2007 | 07 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] - JOHNSON J B ET AL, "Discretization methods and physical models for simulating leakage currents in semiconductor devices with application to modeling trench-DRAM cells", COMPEL - THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING UK, (1991), vol. 10, no. 4, ISSN 0332-1649, pages 573 - 588, XP008044832 [A] 1,3,6,8,11,13,16,18 * page 573 - page 579 * DOI: http://dx.doi.org/10.1108/eb051732 | [A] - ROSAR M ET AL, "A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]", IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE USA, (200001), vol. 47, no. 1, ISSN 0018-9383, pages 154 - 159, XP002322290 [A] 1,3,6,8,11,13,16,18 * the whole document * DOI: http://dx.doi.org/10.1109/16.817581 | [A] - HURKX G A M ET AL, "A new recombination model for device simulation including tunneling", IEEE TRANSACTIONS ON ELECTRON DEVICES USA, (199202), vol. 39, no. 2, ISSN 0018-9383, pages 331 - 338, XP002322291 [A] 1,3,6,8,11,13,16,18 * paragraphs [0002] , [0003] * * figures 2-4 * DOI: http://dx.doi.org/10.1109/16.121690 | [A] - KUO-FENG YOU ET AL, "A new quasi-2-D model for hot-carrier band-to-band tunneling current", IEEE TRANSACTIONS ON ELECTRON DEVICES IEEE USA, (199906), vol. 46, no. 6, ISSN 0018-9383, pages 1174 - 1179, XP002322292 [A] 1,3,6,8,11,13,16,18 * paragraph [003B] * * figure 4 * DOI: http://dx.doi.org/10.1109/16.766880 | [A] - PENG J Z ET AL, "Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model", 1995 4TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY. PROCEEDINGS (CAT. NO.95TH8143) IEEE NEW YORK, NY, USA, (1995), ISBN 0-7803-3062-5, pages 141 - 143, XP002322293 [A] 1,3,6,8,11,13 * the whole document * |