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Extract from the Register of European Patents

EP About this file: EP1130716

EP1130716 - Distributed feedback semiconductor laser and method for producing the same [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  30.05.2008
Database last updated on 29.07.2024
Most recent event   Tooltip06.11.2009Change - representativepublished on 09.12.2009  [2009/50]
Applicant(s)For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Oaza Kadoma Kadoma-shi Osaka
571-8501 / JP
[2008/47]
Former [2001/36]For all designated states
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
1006, Ohaza Kadoma
Kadoma-shi, Osaka 571-8501 / JP
Inventor(s)01 / Kito, Masahiro
14-22-305, Satsukigaoka-minami, Suita-shi
Osaka 565-0832 / JP
02 / Ishino, Masato
5-7-1-6, Tawara-dai
Shijyonawate-shi, Osaka / JP
03 / Otsuka, Nobuyuki
148-18, Aza Nakamichi, Sasabe
Kawanishi-shi, Hyogo-ken / JP
04 / Matsui, Yasushi
8-23, Kansozuka-cho
Neyagawa-shi, Osaka / JP
05 / Nakamura, Shinji
1-4-14, Asukano-minami
Ikoma-shi, Nara-ken / JP
 [2001/48]
Former [2001/36]01 / Kito, Masahiro
A-201, 3-23, Higashitoyonaka-cho
Toyonaka-shi, Osaka / JP
02 / Ishino, Masato
5-7-1-6, Tawara-dai
Shijyonawate-shi, Osaka / JP
03 / Otsuka, Nobuyuki
148-18, Aza Nakamichi, Sasabe
Kawanishi-shi, Hyogo-ken / JP
04 / Matsui, Yasushi
8-23, Kansozuka-cho
Neyagawa-shi, Osaka / JP
05 / Nakamura, Shinji
1-4-14, Asukano-minami
Ikoma-shi, Nara-ken / JP
Representative(s)Holmes, Miles Keeton, et al
Novagraaf International SA Chemin de l'Echo 3
1213 Onex / CH
[N/P]
Former [2009/50]Holmes, Miles Keeton, et al
Novagraaf International S.A. 25, avenue du Pailly 1220 Les Avanchets
Geneva / CH
Former [2001/36]Holmes, Miles Keeton, et al
Novapat International S.A. 9, rue du Valais
1202 Genève / CH
Application number, filing date01103523.528.09.1995
[2001/36]
Priority number, dateJP1994023383728.09.1994         Original published format: JP 23383794
JP1995001686303.02.1995         Original published format: JP 1686395
[2001/36]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1130716
Date:05.09.2001
Language:EN
[2001/36]
ClassificationIPC:H01S5/12
[2001/36]
CPC:
B82Y20/00 (EP,US); H01L21/02392 (EP,US); H01L21/0243 (EP,US);
H01L21/02461 (EP,US); H01L21/02463 (EP,US); H01L21/02505 (EP,US);
H01L21/02513 (EP,US); H01L21/02543 (EP,US); H01L21/02546 (EP,US);
H01L21/0262 (EP,US); H01S5/0265 (EP,US); H01S5/12 (EP,US);
H01S5/1228 (EP,US); H01S5/125 (EP,US); H01S5/06256 (EP,US);
H01S5/1231 (EP,US); H01S5/2077 (EP,US); H01S5/2081 (EP,US);
H01S5/2272 (EP,US); H01S5/2275 (EP,US); H01S5/32391 (EP,US);
H01S5/34306 (EP,US); H01S5/3434 (EP,US); H01S5/34373 (EP,US) (-)
Designated contracting statesDE,   FR,   GB [2001/36]
TitleGerman:Halbleiterlaser mit verteilter Rückkopplung und Herstellungsverfahren[2001/36]
English:Distributed feedback semiconductor laser and method for producing the same[2001/36]
French:Laser à semi-conducteur à réflecteur distribué et méthode de fabrication[2001/36]
Examination procedure07.03.2001Examination requested  [2001/36]
21.04.2008Application withdrawn by applicant  [2008/27]
Parent application(s)   TooltipEP95115272.7  / EP0706243
Fees paidRenewal fee
21.03.2001Renewal fee patent year 03
21.03.2001Renewal fee patent year 04
21.03.2001Renewal fee patent year 05
21.03.2001Renewal fee patent year 06
06.09.2001Renewal fee patent year 07
24.09.2002Renewal fee patent year 08
17.09.2003Renewal fee patent year 09
22.09.2004Renewal fee patent year 10
22.09.2005Renewal fee patent year 11
15.09.2006Renewal fee patent year 12
18.09.2007Renewal fee patent year 13
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