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EP1251609
European procedure
Extract from the Register of European Patents
EP About this file: EP1251609
| EP1251609 - High-power semiconductor window laser device [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 25.06.2010 Database last updated on 06.07.2024 | Most recent event Tooltip | 25.06.2010 | No opposition filed within time limit | published on 28.07.2010 [2010/30] | Applicant(s) | For all designated states FUJIFILM Corporation 26-30, Nishiazabu 2-chome Minato-ku Tokyo / JP | [N/P] |
| Former [2007/11] | For all designated states FUJIFILM Corporation 26-30, Nishiazabu 2-chome Minato-ku Tokyo / JP | ||
| Former [2002/43] | For all designated states Fuji Photo Film Co., Ltd. 210 Nakanuma Minamiashigara-shi Kanagawa-ken / JP | Inventor(s) | 01 /
Fukunaga, Toshiaki, c/oFuji Photo Film Co., Ltd. 798 Miyanodai, Kaisei-machi Ashigarakami-gun, Kanagawa-ken / JP | [2002/43] | Representative(s) | Klunker . Schmitt-Nilson . Hirsch Patentanwälte Destouchesstraße 68 80796 München / DE | [N/P] |
| Former [2002/43] | Klunker . Schmitt-Nilson . Hirsch Winzererstrasse 106 80797 München / DE | Application number, filing date | 01109682.3 | 19.04.2001 | [2002/43] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1251609 | Date: | 23.10.2002 | Language: | EN | [2002/43] | Type: | B1 Patent specification | No.: | EP1251609 | Date: | 19.08.2009 | Language: | EN | [2009/34] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 16.10.2001 | Classification | IPC: | H01S5/16, H01S5/343 | [2002/43] | CPC: |
B82Y20/00 (EP);
H01S5/164 (EP);
H01S5/3434 (EP);
H01S5/168 (EP);
H01S5/2004 (EP);
H01S5/2231 (EP);
H01S5/3406 (EP);
H01S5/34313 (EP);
H01S5/3436 (EP);
H01S5/34386 (EP)
(-)
| Designated contracting states | CH, DE, FR, GB, IT, LI [2003/29] |
| Former [2002/43] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Hochleistungs-Halbleiterlaservorrichtung mit Fensterstruktur | [2002/43] | English: | High-power semiconductor window laser device | [2002/43] | French: | Dispositif laser à haute puissance à structure à fenêtre | [2002/43] | Examination procedure | 17.03.2003 | Examination requested [2003/20] | 24.04.2003 | Loss of particular rights, legal effect: designated state(s) | 28.08.2003 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, CY, DK, ES, FI, GR, IE, LU, MC, NL, PT, SE, TR | 24.03.2009 | Communication of intention to grant the patent | 24.06.2009 | Fee for grant paid | 24.06.2009 | Fee for publishing/printing paid | Opposition(s) | 20.05.2010 | No opposition filed within time limit [2010/30] | Fees paid | Renewal fee | 28.04.2003 | Renewal fee patent year 03 | 29.04.2004 | Renewal fee patent year 04 | 27.04.2005 | Renewal fee patent year 05 | 31.03.2006 | Renewal fee patent year 06 | 27.04.2007 | Renewal fee patent year 07 | 28.03.2008 | Renewal fee patent year 08 | 28.04.2009 | Renewal fee patent year 09 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 10.06.2003 | AT M01 Not yet paid | 10.06.2003 | BE M01 Not yet paid | 10.06.2003 | CY M01 Not yet paid | 10.06.2003 | DK M01 Not yet paid | 10.06.2003 | ES M01 Not yet paid | 10.06.2003 | FI M01 Not yet paid | 10.06.2003 | GR M01 Not yet paid | 10.06.2003 | IE M01 Not yet paid | 10.06.2003 | LU M01 Not yet paid | 10.06.2003 | MC M01 Not yet paid | 10.06.2003 | NL M01 Not yet paid | 10.06.2003 | PT M01 Not yet paid | 10.06.2003 | SE M01 Not yet paid | 10.06.2003 | TR M01 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US5065403 (KOMAZAKI IWAO [JP]) [A] 1 * figure 3C *; | [A]JP01024484 ; | [A]US5345460 (TAKIGUCHI HARUHISA [JP], et al) [A] 1 * the whole document * | [DA] - FUKUNAGA T ET AL, "HIGHLY RELIABLE OPERATIONS OF HIGH-POWER INGAASP/INGAP/ALGAAS 0.8 MU M SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, (19950915), vol. 34, no. 9B, ISSN 0021-4922, pages L1175 - L1177, XP000702502 [DA] 1,4-7 * the whole document * DOI: http://dx.doi.org/10.1143/JJAP.34.L1175 | [A] - HIROKI NAITO ET AL, "HIGHLY-RELIABLE CW OPERATION OF 100 MW GAAIAS BURIED TWIN RIDGE SUBSTRATE LASERS WITH NONABSORBING MIRRORS", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, (19890601), vol. 25, no. 6, ISSN 0018-9197, pages 1495 - 1499, XP000054770 [A] 1 * paragraph [00IV]; figures 1,5 * DOI: http://dx.doi.org/10.1109/3.29286 | [A] - PATENT ABSTRACTS OF JAPAN, (19890516), vol. 013, no. 207, Database accession no. (E - 758), & JP01024484 A 19890126 (SANYO ELECTRIC CO LTD) [A] 1 * abstract * |