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EP1198043
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EP About this file: EP1198043
| EP1198043 - Method of fabricating a III-V compound semiconductor device with an Aluminium-compound layer [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 10.06.2005 Database last updated on 14.06.2024 | Most recent event Tooltip | 10.06.2005 | Application deemed to be withdrawn | published on 27.07.2005 [2005/30] | Applicant(s) | For all designated states THE FURUKAWA ELECTRIC CO., LTD. 6-1, Marunouchi 2-chome, Chiyoda-ku Tokyo / JP | [N/P] |
| Former [2002/16] | For all designated states THE FURUKAWA ELECTRIC CO., LTD. 6-1, Marunouchi 2-chome, Chiyoda-ku Tokyo / JP | Inventor(s) | 01 /
Arakawa, Satoshi The Furukawa Electric Co., Ltd., 2-6-1, Marunouchi Chiyoda-ku, Tokyo / JP | 02 /
Kasukawa, Akihiko The Furukawa Electric Co., Ltd., 2-6-1, Marunouchi Chiyoda-ku, Tokyo / JP | [2002/16] | Representative(s) | Modiano, Guido, et al Modiano, Josif, Pisanty & Staub Ltd., Baaderstrasse 3 80469 München / DE | [N/P] |
| Former [2002/16] | Modiano, Guido, Dr.-Ing., et al Modiano, Josif, Pisanty & Staub, Baaderstrasse 3 80469 München / DE | Application number, filing date | 01123215.4 | 01.10.2001 | [2002/16] | Priority number, date | JP20000307637 | 06.10.2000 Original published format: JP 2000307637 | [2002/16] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1198043 | Date: | 17.04.2002 | Language: | EN | [2002/16] | Type: | A3 Search report | No.: | EP1198043 | Date: | 28.04.2004 | [2004/18] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.03.2004 | Classification | IPC: | H01S5/22, H01L33/00, H01L21/306, H01S5/223 | [2004/18] | CPC: |
H01L21/3065 (EP,US);
H01L21/02392 (EP,US);
H01L21/02461 (EP,US);
H01L21/02463 (EP,US);
H01L21/02505 (EP,US);
H01L21/02543 (EP,US);
H01L21/02546 (EP,US);
H01L21/0262 (EP,US);
H01L21/02639 (EP,US);
H01L21/02647 (EP,US);
H01L33/0062 (EP,US);
H01S5/2081 (EP,US);
H01S5/2275 (EP,US)
(-)
|
| Former IPC [2002/16] | H01S5/22, H01S5/24, H01S5/223, H01L33/00, H01L21/306 | Designated contracting states | (deleted) [2005/03] |
| Former [2002/16] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Verfahren zur Herstellung eines III-V Verbindungshalbleiter-Bauelementes mit einer Aluminium-basierten Verbindungsschicht | [2002/16] | English: | Method of fabricating a III-V compound semiconductor device with an Aluminium-compound layer | [2002/16] | French: | Méthode de fabrication d'un dispositif semiconducteur en composé III-V comprenant une couche d'un composé d'Aluminium | [2002/16] | Examination procedure | 29.10.2004 | Application deemed to be withdrawn, date of legal effect [2005/30] | 22.02.2005 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2005/30] | Fees paid | Renewal fee | 24.10.2003 | Renewal fee patent year 03 | Penalty fee | Penalty fee Rule 85a EPC 1973 | 06.12.2004 | AT M01 Not yet paid | 06.12.2004 | BE M01 Not yet paid | 06.12.2004 | CH M01 Not yet paid | 06.12.2004 | CY M01 Not yet paid | 06.12.2004 | DE M01 Not yet paid | 06.12.2004 | DK M01 Not yet paid | 06.12.2004 | ES M01 Not yet paid | 06.12.2004 | FI M01 Not yet paid | 06.12.2004 | FR M01 Not yet paid | 06.12.2004 | GB M01 Not yet paid | 06.12.2004 | GR M01 Not yet paid | 06.12.2004 | IE M01 Not yet paid | 06.12.2004 | IT M01 Not yet paid | 06.12.2004 | LU M01 Not yet paid | 06.12.2004 | MC M01 Not yet paid | 06.12.2004 | NL M01 Not yet paid | 06.12.2004 | PT M01 Not yet paid | 06.12.2004 | SE M01 Not yet paid | 06.12.2004 | TR M01 Not yet paid | Penalty fee Rule 85b EPC 1973 | 06.12.2004 | M01 Not yet paid | Additional fee for renewal fee | 31.10.2004 | 04 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]EP0374036 (FUJITSU LTD [JP]) [Y] 1-3,5-7,11 * column 8, line 1 - column 9, line 2 *; | [X]EP0709902 (MITSUBISHI CHEM CORP [JP]) [X] 1,2,4-7,10-13,15-17 * column 5, line 12 - column 6, line 58 * * column 9, line 51 - column 10, line 52* * Figures 2a - 2d, 5 *; | [Y]US5942447 (MIYAKUNI SHINICHI [JP]) [Y] 1-3,5-7,11 * column 13, line 24 - line 30 * * column 15, line 22 - line 55 *; | [XY] - HOU H Q ET AL, "In situ etching of GaAs by AsCl3 for regrowth on AlGaAs in metalorganic vapor-phase epitaxy", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, (19981215), vol. 195, no. 1-4, ISSN 0022-0248, pages 199 - 204, XP004154260 [X] 12-14,16,17 * the whole document * [Y] 1-3,5-7,11 DOI: http://dx.doi.org/10.1016/S0022-0248(98)00733-7 | [PX] - ARAKAWA S ET AL, "In-situ etching of semiconductor with CBr4 in MOCVD reactor", CONFERENCE PROCEEDINGS. 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS. IPRM. NARA, JAPAN, MAY 14 - 18, 2001, INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, NEW YORK, NY: IEEE, US, (20010514), vol. CONF. 13, ISBN 0-7803-6700-6, pages 71 - 74, XP010546976 [PX] 1-17 * the whole document * DOI: http://dx.doi.org/10.1109/ICIPRM.2001.929021 | [A] - INOUE Y ET AL, "FABRICATION OF ALXGA1-XAS BURIED HETEROSTRUCTURE LASER DIODES BY IN-SITU GAS ETCHING AND SELECTIVE-AREA METALORGANIC VAPOR PHASE EPITAXY", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, (19941202), vol. 145, no. 1/4, ISSN 0022-0248, pages 881 - 885, XP000511799 DOI: http://dx.doi.org/10.1016/0022-0248(94)91157-6 | [A] - IKAWA S ET AL, "AIGAAS-GAAS BURIED HETEROSTRUCTURE LASER WITH VERTICALLY ETCHED FACETS AND WIDE-BANDGAP OPTICAL WINDOWS BY IN SITU C2H5CI GAS-PHASEETCHING AND MOCVD REGROWTH", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, (19970601), vol. 9, no. 6, ISSN 1041-1135, pages 719 - 721, XP000692401 DOI: http://dx.doi.org/10.1109/68.584968 |