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EP About this file: EP1347083

EP1347083 - SILICON SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL [Right-click to bookmark this link]
Status	No opposition filed within time limit Status updated on 25.07.2014 Database last updated on 24.04.2024
Most recent event Tooltip	14.11.2014	Lapse of the patent in a contracting state New state(s): GB	published on 17.12.2014 [2014/51]
Applicant(s)	For all designated states Shin-Etsu Handotai Co., Ltd. 6-2, Ohtemachi 2-chome Chiyoda-ku Tokyo / JP
	[2013/38]
Former [2009/17]	For all designated states Shin-Etsu Handotai Co., Ltd. 6-2, Ohtemachi 2-chome Chiyoda-ku Tokyo / JP
Former [2003/39]	For all designated states Shin-Etsu Handotai Co., Ltd 4-2 Marunouchi 1-chome, Chiyoda-ku Tokyo 100-0005 / JP
Inventor(s)	01 / SAKURADA, Masahiro, @c/o Shirakawa R & D Center 150, Aza Ohira Oaza Odakura Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	02 / KOBAYASHI, Takeshi, @c/o Shirakawa R & D Center 150, Aza Ohira Oaza Odakura Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	03 / MORI, Tatsuo, @c/o Shirakawa R & D Center 150, Aza Ohira Oaza Odakura Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	04 / FUSEGAWA, Izumi, @c/o Shirakawa R & D Center 150, Aza Ohira Oaza Odakura Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	05 / OHTA, Tomohiko, @c/o Shirakawa R & D Center 150, Aza Ohira Oaza Odakura Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	[2013/38]
Former [2003/39]	01 / SAKURADA, Masahiro, c/o Shirakawa R & D Center 150, Aza Ohira, Oaza Odakura, Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	02 / KOBAYASHI, Takeshi, c/o Shirakawa R & D Center 150, Aza Ohira, Oaza Odakura, Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	03 / MORI, Tatsuo, c/o Shirakawa R & D Center 150, Aza Ohira, Oaza Odakura, Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	04 / FUSEGAWA, Izumi, c/o Shirakawa R & D Center 150, Aza Ohira, Oaza Odakura, Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
	05 / OHTA, Tomohiko, c/o Shirakawa R & D Center 150, Aza Ohira, Oaza Odakura, Nishigo-mura Nishishirakawa-gun, Fukushima 961-8061 / JP
Representative(s)	Wibbelmann, Jobst, et al Wuesthoff & Wuesthoff Patentanwälte und Rechtsanwalt PartG mbB Schweigerstrasse 2 81541 München / DE
	[N/P]
Former [2012/36]	Wibbelmann, Jobst, et al Wuesthoff & Wuesthoff Patent- und Rechtsanwälte Schweigerstrasse 2 81541 München / DE
Former [2003/39]	Cooper, John, et al Murgitroyd & Company 165-169 Scotland Street Glasgow G5 8PL / GB
Application number, filing date	01272882.0	26.12.2001
	[2003/39]
	WO2001JP11492
Priority number, date	JP20000403127	28.12.2000 Original published format: JP 2000403127
	[2003/39]
Filing language	JA
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO02053812
	Date:	11.07.2002
	Language:	EN
	[2002/28]
	Type:	A1 Application with search report
	No.:	EP1347083
	Date:	24.09.2003
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 11.07.2002 takes the place of the publication of the European patent application.
	[2003/39]
	Type:	B1 Patent specification
	No.:	EP1347083
	Date:	18.09.2013
	Language:	EN
	[2013/38]
Search report(s)	International search report - published on:	JP	11.07.2002
	(Supplementary) European search report - dispatched on:	EP	14.03.2008
Classification	IPC:	C30B15/14, C30B29/06	[2013/17]
	CPC:	C30B29/06 (EP,KR,US); C30B15/14 (EP,US)
	Former IPC [2003/39]	C30B29/06
Designated contracting states	DE, FR, GB, IT [2004/22]
Former [2003/39]	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR
Title	German:	SLIZIUMEINKRISTALLSCHEIBE UND HERSTELLUNGSVERFAHREN FÜR SILIZIUMEINKRISTALL	[2003/39]
	English:	SILICON SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL	[2003/39]
	French:	PLAQUETTE DE SILICIUM MONOCRISTALLIN ET SON PROCEDE DE PRODUCTION	[2003/39]
Entry into regional phase	31.08.2002	Translation filed
	03.09.2002	National basic fee paid
	03.09.2002	Search fee paid
	03.09.2002	Designation fee(s) paid
	03.09.2002	Examination fee paid
Examination procedure	03.09.2002	Examination requested [2003/39]
	22.09.2009	Despatch of a communication from the examining division (Time limit: M04)
	08.01.2010	Reply to a communication from the examining division
	18.06.2010	Despatch of a communication from the examining division (Time limit: M04)
	04.10.2010	Reply to a communication from the examining division
	26.09.2011	Despatch of a communication from the examining division (Time limit: M04)
	16.01.2012	Reply to a communication from the examining division
	18.04.2013	Communication of intention to grant the patent
	07.08.2013	Fee for grant paid
	07.08.2013	Fee for publishing/printing paid
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 22.09.2009
Opposition(s)	19.06.2014	No opposition filed within time limit [2014/35]
Fees paid	Renewal fee
	12.12.2003	Renewal fee patent year 03
	03.12.2004	Renewal fee patent year 04
	05.12.2005	Renewal fee patent year 05
	05.12.2006	Renewal fee patent year 06
	05.12.2007	Renewal fee patent year 07
	07.11.2008	Renewal fee patent year 08
	27.11.2009	Renewal fee patent year 09
	01.12.2010	Renewal fee patent year 10
	07.11.2011	Renewal fee patent year 11
	19.12.2012	Renewal fee patent year 12
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition Tooltip	IT	18.09.2013
	GB	26.12.2013
	[2014/51]
Former [2014/38]	IT	18.09.2013
Documents cited:	Search	[X]EP0890662 (SHINETSU HANDOTAI KK [JP]) [X] 1-7 * page 4, lines 34-37; figures 7,8 *;
		[X]US5954873 (HOURAI MASATAKA [JP], et al) [X] 1-7 * the whole document *;
		[X]EP0962556 (SHINETSU HANDOTAI KK [JP]) [X] 1-6* paragraphs [0011] , [0064] , [0107] *;
		[E]EP1170404 (SHINETSU HANDOTAI KK [JP]) [E] 3-6 * paragraphs [0011] , [0012] *;
		[E]WO03004734 (MEMC ELECTRONIC MATERIALS [US]) [E] 1-6 * claims 12,37,45 *
	International search	[A]EP0964082 (SHINETSU HANDOTAI KK [JP]);
		[X]US6048395 (IIDA MAKOTO [JP], et al);
		[X]EP1035234 (SUMITOMO METAL IND [JP])
	by applicant	WO03004734

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