-
EP1127955
European procedure
Extract from the Register of European Patents
EP About this file: EP1127955
| EP1127955 - Low resistivity silicon carbide [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 04.06.2010 Database last updated on 19.10.2024 | Most recent event Tooltip | 04.03.2011 | Lapse of the patent in a contracting state New state(s): IT | published on 06.04.2011 [2011/14] | Applicant(s) | For all designated states Shipley Company LLC 455 Forest Street Marlborough, MA 01752 / US | [2001/35] | Inventor(s) | 01 /
Goela, Jitendra S. 12 Messina Drive Andover, Massachusetts 01810 / US | 02 /
Pickering, Michael A. 246 Willard Street Dracut, Massachusetts 01826 / US | [2001/35] | Representative(s) | Kent, Venetia Katherine Patent Outsourcing Limited 1 King Street Bakewell Derbyshire DE45 1DZ / GB | [N/P] |
| Former [2009/51] | Kent, Venetia Katherine Patent Outsourcing Limited 1 King Street Bakewell Derbyshire DE 45 1DZ / GB | ||
| Former [2001/35] | Kent, Venetia Katherine Rohm and Haas (UK) Ltd European Operations Patent Dept. Lennig House 2 Mason's Avenue Croydon, CR9 3NB / GB | Application number, filing date | 01301614.2 | 22.02.2001 | [2001/35] | Priority number, date | US20000184766P | 24.02.2000 Original published format: US 184766 P | [2001/35] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1127955 | Date: | 29.08.2001 | Language: | EN | [2001/35] | Type: | B1 Patent specification | No.: | EP1127955 | Date: | 29.07.2009 | Language: | EN | [2009/31] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.06.2001 | Classification | IPC: | C23C16/32, C23C16/44 | [2001/35] | CPC: |
C23C16/01 (EP,US);
C23C16/32 (KR);
C23C16/325 (EP,US)
| Designated contracting states | DE, FR, GB, IT, NL [2002/21] |
| Former [2001/35] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Siliziumkarbid mit geringem Widerstand | [2001/35] | English: | Low resistivity silicon carbide | [2001/35] | French: | Carbure de silicium à faible résistivité | [2001/35] | Examination procedure | 03.03.2001 | Examination requested [2001/35] | 02.04.2007 | Despatch of a communication from the examining division (Time limit: M04) | 28.06.2007 | Reply to a communication from the examining division | 13.03.2009 | Communication of intention to grant the patent | 12.06.2009 | Fee for grant paid | 12.06.2009 | Fee for publishing/printing paid | Opposition(s) | 03.05.2010 | No opposition filed within time limit [2010/27] | Fees paid | Renewal fee | 25.02.2003 | Renewal fee patent year 03 | 23.02.2004 | Renewal fee patent year 04 | 22.02.2005 | Renewal fee patent year 05 | 27.02.2006 | Renewal fee patent year 06 | 27.02.2007 | Renewal fee patent year 07 | 25.02.2008 | Renewal fee patent year 08 | 26.02.2009 | Renewal fee patent year 09 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | IT | 29.07.2009 | FR | 01.03.2010 | [2011/14] |
| Former [2011/07] | FR | 01.03.2010 | Documents cited: | Search | [XY]US4772498 (BERTIN ROBERT [US], et al) [X] 1,12,15 * abstract * [Y] 2,3,10,11,13,14,16,17; | [YA]EP0582444 (CVD INC [US]) [Y] 2,10,11,13,16,17 * abstract * * page 10, lines 1-20; example 1 * [A] 4-9; | [Y] - KIMOTO T ET AL, "Step-controlled epitaxy of SiC: High-quality homoepitaxial growth", DIAMOND AND RELATED MATERIALS,NL,ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, (19980201), vol. 7, no. 2-5, ISSN 0925-9635, pages 342 - 347, XP004115062 [Y] 3,14 * abstract * * page 345, column L, lines 29-34 * DOI: http://dx.doi.org/10.1016/S0925-9635(97)00166-0 |