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EP1334512
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EP About this file: EP1334512
| EP1334512 - FET WITH NOTCHED GATE AND METHOD OF MANUFACTURING THE SAME [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 25.09.2009 Database last updated on 24.08.2024 | Most recent event Tooltip | 25.09.2009 | Withdrawal of application | published on 28.10.2009 [2009/44] | Applicant(s) | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | [N/P] |
| Former [2003/33] | For all designated states International Business Machines Corporation New Orchard Road Armonk, NY 10504 / US | Inventor(s) | 01 /
FURUKAWA, Toshiharu 9 Oakwood Lane Essex Junction, VT 05452 / US | 02 /
HAKEY, Mark 15 Bellows Street Fairfax, VT 05454 / US | 03 /
HOLMES, Steven 127 Devino Road Milton, VT 05468 / US | 04 /
HORAK, David 47 Briar Lane Essex Junction, VT 05452 / US | 05 /
NOWAK, Edward 8 Windridge Road Essex Junction, VT 05452 / US | [2003/33] | Representative(s) | Burt, Roger James IBM United Kingdom Limited Intellectual Property Department Hursley Park Winchester Hampshire SO21 2JN / GB | [N/P] |
| Former [2003/33] | Burt, Roger James, Dr. IBM United Kingdom Limited, Intellectual Property Law, MP 110, Hursley Park, Hursley Winchester, Hampshire SO21 2JN / GB | Application number, filing date | 01983677.4 | 13.11.2001 | [2003/33] | WO2001GB05015 | Priority number, date | US20000713830 | 15.11.2000 Original published format: US 713830 | [2003/33] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO0241383 | Date: | 23.05.2002 | Language: | EN | [2002/21] | Type: | A1 Application with search report | No.: | EP1334512 | Date: | 13.08.2003 | Language: | EN | The application published by WIPO in one of the EPO official languages on 23.05.2002 takes the place of the publication of the European patent application. | [2003/33] | Search report(s) | International search report - published on: | EP | 23.05.2002 | Classification | IPC: | H01L21/336, H01L21/28, H01L21/265, H01L29/78, H01L29/423, H01L29/10, H01L29/49 | [2003/33] | CPC: |
H01L29/6659 (EP,US);
H01L21/18 (KR);
H01L21/26586 (EP,US);
H01L21/2807 (EP,US);
H01L21/28114 (EP,US);
H01L21/28123 (EP,US);
H01L29/1045 (EP,US);
H01L29/42376 (EP,US);
H01L29/4966 (EP,US);
| Designated contracting states | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR [2003/33] | Extension states | AL | Not yet paid | LT | Not yet paid | LV | Not yet paid | MK | Not yet paid | RO | Not yet paid | SI | Not yet paid | Title | German: | FELDEFFEKTTRANSISTOR MIT EINER KERBENFÖRMIGEN GATE UND HERSTELLUNGSVERFAHREN | [2003/33] | English: | FET WITH NOTCHED GATE AND METHOD OF MANUFACTURING THE SAME | [2003/33] | French: | FET A GRILLE A ENCOCHE ET SON PROCEDE DE FABRICATION | [2003/33] | Entry into regional phase | 30.05.2003 | National basic fee paid | 30.05.2003 | Designation fee(s) paid | 30.05.2003 | Examination fee paid | Examination procedure | 05.12.2001 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 30.05.2003 | Examination requested [2003/33] | 12.08.2003 | Loss of particular rights, legal effect: Claims | 16.09.2003 | Despatch of communication of loss of particular rights: Claims {1} | 21.11.2008 | Despatch of a communication from the examining division (Time limit: M04) | 11.02.2009 | Reply to a communication from the examining division | 25.03.2009 | Despatch of a communication from the examining division (Time limit: M04) | 28.05.2009 | Reply to a communication from the examining division | 22.09.2009 | Application withdrawn by applicant [2009/44] | 04.02.2010 | Date of oral proceedings | Fees paid | Renewal fee | 07.11.2003 | Renewal fee patent year 03 | 22.11.2004 | Renewal fee patent year 04 | 22.11.2005 | Renewal fee patent year 05 | 17.11.2006 | Renewal fee patent year 06 | 16.11.2007 | Renewal fee patent year 07 | 17.11.2008 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [X]JPH10294453 ; | [A]US5650343 (LUNING SCOTT [US], et al) [A] 1-53 * the whole document *; | [A]US5650342 (SATOH SHINICHI [JP], et al) [A] 1-53* the whole document *; | [X]US6037630 (IGARASHI MOTOSHIGE [JP], et al) [X] 1,2,9,10,12,15,16,20,22-26,30,32,36,47,50 * column 7, line 30 - column 9, line 4; figure 9 *; | [A]FR2791177 (FRANCE TELECOM [FR]) [A] 1-53 * the whole document *; | [X] - PATENT ABSTRACTS OF JAPAN, (19990226), vol. 1999, no. 02, & JP10294453 A 19981104 (NEC CORP) [X] 1-6,9,10,12,16-19 * abstract * | [X] - SKOTNICKI T ET AL, "WELL-CONTROLLED, SELECTIVELY UNDER-ETCHED SI/SIGE GATES FOR RF AND HIGH PERFORMANCE CMOS", 2000 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. HONOLULU, JUNE 13-15, 2000, SYMPOSIUM ON VLSI TECHNOLOGY, NEW YORK, NY: IEEE, US, (20000613), ISBN 0-7803-6306-X, pages 156 - 157, XP000970799 [X] 1-6,9,10,12-15,20,22-26,28-30,47-51 * the whole document * | by applicant | US5750430 | FR2791177 | - T. GHANI ET AL., TECHNICAL DIGEST OF THE 1999 INTERNATIONAL ELECTRON DEVICES MEETING, (1999), page 415 |