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EP1263029

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Extract from the Register of European Patents

EP About this file: EP1263029

EP1263029 - GaN semiconductor device [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 30.03.2018 Database last updated on 19.07.2024
Former	Examination is in progress Status updated on 20.12.2017
Most recent event Tooltip	11.01.2019	Change - classification	published on 13.02.2019 [2019/07]
Applicant(s)	For all designated states NGK Insulators, Ltd. 2-56, Suda-Cho, Mizuho-ku Nagoya City, Aichi Pref. / JP
	[N/P]
Former [2002/49]	For all designated states NGK INSULATORS, LTD. 2-56, Suda-cho, Mizuho-ku Nagoya City Aichi Pref. / JP
Inventor(s)	01 / Shibata, Tomohiko NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku Nagoya City, Aichi Pref. / JP
	02 / Asai, Keiichiro NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku Nagoya City, Aichi Pref. / JP
	03 / Oda, Osamu NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku Nagoya City, Aichi Pref. / JP
	04 / Tanaka, Mitsuhiro NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku Nagoya City, Aichi Pref. / JP
	[2002/49]
Representative(s)	TBK Bavariaring 4-6 80336 München / DE
	[N/P]
Former [2005/34]	TBK-Patent Bavariaring 4-6 80336 München / DE
Former [2002/49]	Leson, Thomas Johannes Alois, Dipl.-Ing. Tiedtke-Bühling-Kinne & Partner GbR, TBK-Patent, Bavariaring 4 80336 München / DE
Application number, filing date	02011962.4	29.05.2002
	[2002/49]
Priority number, date	JP20010163592	31.05.2001 Original published format: JP 2001163592
	[2002/49]
Filing language	EN
Procedural language	EN
Publication	Type:	A2 Application without search report
	No.:	EP1263029
	Date:	04.12.2002
	Language:	EN
	[2002/49]
	Type:	A3 Search report
	No.:	EP1263029
	Date:	25.02.2009
	[2009/09]
Search report(s)	(Supplementary) European search report - dispatched on:	EP	28.01.2009
Classification	IPC:	H01L21/20	[2002/49]
	CPC:	H01L29/812 (EP,US); H01L21/02378 (EP,US); H01L21/02458 (EP,US); H01L21/0254 (EP,US); H01L21/0262 (EP,US); H01L29/7371 (EP,US); (+) H01L29/7787 (EP,US); H01L29/2003 (EP,US) (-)
Designated contracting states	DE, FR, GB [2009/44]
Former [2002/49]	AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR
Title	German:	GaN Halbleiterbauelement	[2002/49]
	English:	GaN semiconductor device	[2002/49]
	French:	Dispositif semiconducteur en GaN	[2002/49]
Examination procedure	29.07.2009	Examination requested [2009/37]
	26.08.2009	Loss of particular rights, legal effect: designated state(s)
	04.09.2009	Despatch of a communication from the examining division (Time limit: M06)
	29.09.2009	Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GR, IE, IT, LU, MC, NL, PT, SE, TR
	12.03.2010	Reply to a communication from the examining division
	03.05.2010	Despatch of a communication from the examining division (Time limit: M06)
	15.11.2010	Reply to a communication from the examining division
	25.06.2013	Date of oral proceedings
	16.08.2013	Minutes of oral proceedings despatched
	23.08.2013	Despatch of communication that the application is refused, reason: substantive examination {1}
	01.12.2017	Application deemed to be withdrawn, date of legal effect [2018/18]
	21.12.2017	Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2018/18]
Appeal following examination	10.10.2013	Appeal received No. T0204/14
	11.12.2013	Statement of grounds filed
	01.03.2018	Result of appeal procedure: the application was deemed to be withdrawn
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 04.09.2009
Fees paid	Renewal fee
	27.05.2004	Renewal fee patent year 03
	27.05.2005	Renewal fee patent year 04
	29.05.2006	Renewal fee patent year 05
	31.05.2007	Renewal fee patent year 06
	31.03.2008	Renewal fee patent year 07
	29.05.2009	Renewal fee patent year 08
	31.03.2010	Renewal fee patent year 09
	30.05.2011	Renewal fee patent year 10
	30.03.2012	Renewal fee patent year 11
	29.05.2013	Renewal fee patent year 12
	31.03.2014	Renewal fee patent year 13
	29.05.2015	Renewal fee patent year 14
	31.03.2016	Renewal fee patent year 15
	Penalty fee
	Additional fee for renewal fee
	31.05.2017	16 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[X]JPH0983016 (NICHIA KAGAKU KOGYO KK) [X] 1,3,4,7,12,14,15 * figure 1; paragraphs [0009] - [0010] *;
		[X]EP0783768 (CREE RESEARCH INC [US]) [X] 1,7,12 * paragraphs [0026], [0036]-[0038], [0041]-[0045]; figure 2, 3 *;
		[X]JP2000068498 (NIPPON TELEGRAPH & TELEPHONE) [X] 1-6,9-17 * paragraph [0002], figures 1-3 *;
		[X]US6177685 (TERAGUCHI NOBUAKI [JP], et al) [X] 1,3,4,9,10,12,14,15* column 6, line 56 - column 7, line 13; figure 7 *;
		[A] - FORSBERG U ET AL, "GROWTH OF HIGH QUALITY AIN EPITAXIAL FILMS BY HOT-WALL CHEMICAL VAPOUR DEPOSITION", MATERIALS SCIENCE FORUM, AEDERMANNSDORF, CH, (19980101), vol. 264-268, ISSN 0255-5476, pages 1133 - 1136, XP001248200 [A] 5,6,16,17 * abstract *
	Examination	- BINARI S C ET AL, "AlGaN/GaN HEMTs grown on SiC substrates", ELECTRONICS LETTERS, IEE STEVENAGE, GB LNKD- DOI:10.1049/EL:19970122, (19970130), vol. 33, no. 3, ISSN 0013-5194, pages 242 - 243, XP006006990 DOI: http://dx.doi.org/10.1049/el:19970122
	by applicant	JPH0983016
		EP0783768
		JP2000068498
		US6177685
		- MATERIALS SCIENCE FORUM, (19980101), vol. 264-268, pages 1133 - 1136
		- S. C. BINARI ET AL., "AlGaN/GaN HEMTs grown on SiC substrates", ELECTRONICS LETTERS, (19970130), vol. 33, pages 242 - 243

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

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