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Extract from the Register of European Patents

EP About this file: EP1271663

EP1271663 - A III nitride film and III nitride multilayer [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  28.01.2020
Database last updated on 20.12.2024
Most recent event   Tooltip24.04.2020Petition for review: decisionpublished on 27.05.2020  [2020/22]
Applicant(s)For all designated states
NGK Insulators, Ltd.
2-56, Suda-Cho, Mizuho-ku
Nagoya City, Aichi Pref. / JP
[N/P]
Former [2003/01]For all designated states
NGK INSULATORS, LTD.
2-56, Suda-cho, Mizuho-ku
Nagoya City Aichi Pref. / JP
Inventor(s)01 / Shibata, Tomohiko
NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku
Nagoya-City, Aichi-pref. / JP
02 / Sumiya, Shigeaki
NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku
Nagoya-City, Aichi-pref. / JP
03 / Asai, Keiichiro
NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku
Nagoya-City, Aichi-pref. / JP
04 / Tanaka, Mitsuhiro
NGK Insulators, Ltd., 2-56, Suda-Cho, Mizuho-Ku
Nagoya-City, Aichi-pref. / JP
 [2003/01]
Representative(s)TBK
Bavariaring 4-6
80336 München / DE
[N/P]
Former [2005/34]TBK-Patent
Bavariaring 4-6
80336 München / DE
Former [2003/01]Leson, Thomas Johannes Alois, Dipl.-Ing.
Tiedtke-Bühling-Kinne & Partner GbR, TBK-Patent, Bavariaring 4
80336 München / DE
Application number, filing date02013075.313.06.2002
[2003/01]
Priority number, dateJP2001018185915.06.2001         Original published format: JP 2001181859
JP2001026681004.09.2001         Original published format: JP 2001266810
US20010303126P05.07.2001         Original published format: US 303126 P
[2003/01]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1271663
Date:02.01.2003
Language:EN
[2003/01]
Type: A3 Search report 
No.:EP1271663
Date:21.10.2009
[2009/43]
Search report(s)(Supplementary) European search report - dispatched on:EP23.09.2009
ClassificationIPC:H01L33/00, C30B25/02, C30B29/40, H01L21/20, // H01L29/20
[2009/42]
CPC:
C30B25/02 (EP); C30B29/403 (EP); H01L21/0237 (EP);
H01L21/0242 (EP); H01L21/02458 (EP); H01L21/0254 (EP);
H01L21/0262 (EP); H01L29/045 (EP); H01L29/2003 (EP);
H01L33/007 (EP); H01L33/12 (EP) (-)
Former IPC [2003/01]H01L33/00
Designated contracting statesDE,   FR,   GB [2010/26]
Former [2003/01]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
TitleGerman:Ein III Nitrid Film und eine III Nitrid Mehrfachschicht[2003/01]
English:A III nitride film and III nitride multilayer[2003/01]
French:Une couche à III nitride et une couche multiple à III nitride[2003/01]
Examination procedure20.04.2010Examination requested  [2010/22]
22.04.2010Loss of particular rights, legal effect: designated state(s)
01.06.2010Despatch of communication of loss of particular rights: designated state(s) AT, BE, CH, CY, DK, ES, FI, GR, IE, IT, LU, MC, NL, PT, SE, TR
21.06.2010Despatch of a communication from the examining division (Time limit: M04)
22.10.2010Reply to a communication from the examining division
19.12.2012Date of oral proceedings
01.03.2013Minutes of oral proceedings despatched
06.03.2013Despatch of communication that the application is refused, reason: substantive examination [2018/33]
08.06.2018Application refused, date of legal effect [2018/33]
29.01.2020Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time
Appeal following examination15.05.2013Appeal received No.  T1731/13
12.07.2013Statement of grounds filed
08.06.2018Result of appeal procedure: appeal of the applicant was rejected
08.06.2018Date of oral proceedings
15.06.2018Minutes of oral proceedings despatched
Petition(s) for review:12.09.2018Petition for review received
 Number:  R0011/18
 for appeal No.  T1731/13-3403
 Petitioner:  APPR
26.11.2019Decision:  Petition for review obviously inadmissible (not deemed to be filed) or simultaneously obviously inadmissible and obviously unsubstantiated.
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  21.06.2010
Fees paidRenewal fee
29.06.2004Renewal fee patent year 03
30.06.2005Renewal fee patent year 04
28.06.2006Renewal fee patent year 05
29.06.2007Renewal fee patent year 06
31.03.2008Renewal fee patent year 07
30.06.2009Renewal fee patent year 08
31.03.2010Renewal fee patent year 09
29.06.2011Renewal fee patent year 10
31.03.2012Renewal fee patent year 11
28.06.2013Renewal fee patent year 12
31.03.2014Renewal fee patent year 13
29.06.2015Renewal fee patent year 14
31.03.2016Renewal fee patent year 15
29.06.2017Renewal fee patent year 16
11.06.2018Renewal fee patent year 17
Penalty fee
Additional fee for renewal fee
30.06.201918   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[Y]EP1065705  (TOYODA GOSEI KK [JP]) [Y] 10 * paragraph [0057] - paragraph [0063] *;
 [XY]  - AMANO H ET AL, "CONTROL OF DISLOCATIONS AND STRESS IN AIGAN ON SAPPHIRE USING A LOWTEMPERATURE INTERLAYER", PHYSICA STATUS SOLIDI. B, BASIC RESEARCH, AKADEMIE VERLAG, BERLIN, DE, (19991101), vol. 216, no. 1, ISSN 0370-1972, pages 683 - 689, XP000892888 [X] 1-7,11,12 * Section "3. The growth of AlGaN using low temperature interlayers"; figure 5 * [Y] 8-10

DOI:   http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<683::AID-PSSB683>3.0.CO;2-4
 [Y]  - FORSBERG U ET AL, "GROWTH OF HIGH QUALITY AIN EPITAXIAL FILMS BY HOT-WALL CHEMICAL VAPOUR DEPOSITION", MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, CH, (19980101), vol. 264-268, ISSN 0255-5476, pages 1133 - 1136, XP001248200 [Y] 8,9 * abstract *
 [A]  - "High quality AIN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19950529), vol. 66, no. 22, ISSN 0003-6951, pages 2958 - 2960, XP012012906 [A] 1 * figures 1,2 *

DOI:   http://dx.doi.org/10.1063/1.114242
 [AD]  - K. KOBAYASHI, A. A. YAMAGUCHI, S. KIMURA, H. SUNAKAWA, A. KIMURA, A. USUI, "X-ray rocking curve determination of twist and tilt angles in GaN films grown by an epitaxial-lateral-overgrowth technique", JAPANESE JOURNAL OF APPLIED PHYSICS, (19990615), vol. 38, no. 6A/B, pages L611 - L613, XP002543553 [AD] 1-12 * figure 2 *
by applicantEP1065705
    - PHYSICA STATUS SOLIDI. B, (19991101), vol. 216, no. 1, pages 683 - 689
    - APPLIED PHYSICS LETTERS, (19950529), vol. 66, no. 22, pages 2958 - 2960
    - MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, (19980101), vol. 264-268, pages 1133 - 1136
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.