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Extract from the Register of European Patents

EP About this file: EP1251564

EP1251564 - Non-volatile semiconductor memory device and manufacturing method thereof [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  14.05.2004
Database last updated on 24.04.2024
Most recent event   Tooltip14.05.2004Application deemed to be withdrawnpublished on 30.06.2004  [2004/27]
Applicant(s)For all designated states
MITSUBISHI DENKI KABUSHIKI KAISHA
2-3, Marunouchi 2-chome, Chiyoda-ku
Tokyo 100-8310 / JP
[N/P]
Former [2002/43]For all designated states
MITSUBISHI DENKI KABUSHIKI KAISHA
2-3, Marunouchi 2-chome, Chiyoda-ku
Tokyo 100-8310 / JP
Inventor(s)01 / Fukumoto, Atsushi, Mitsubishi Denki Kabushiki K.
2-3, Marunouchi 2-chome, Chiyoda-ku
Tokyo 100-8310 / JP
02 / Shimizu, Satoshi, Mitsubishi Denki Kabushiki K.
2-3, Marunouchi 2-chome, Chiyoda-ku
Tokyo 100-8310 / JP
03 / Ohnakado, Takahiro, Mitsubishi Denki Kabushiki K.
2-3, Marunouchi 2-chome, Chiyoda-ku
Tokyo 100-8310 / JP
 [2002/43]
Representative(s)Prüfer, Lutz H., et al
PRÜFER & PARTNER GbR
Patentanwälte
Harthauser Strasse 25d
81545 München / DE
[N/P]
Former [2002/43]Prüfer, Lutz H., Dipl.-Phys., et al
PRÜFER & PARTNER GbR, Patentanwälte, Harthauser Strasse 25d
81545 München / DE
Application number, filing date02013734.509.05.2001
[2002/43]
Priority number, dateJP2000022194324.07.2000         Original published format: JP 2000221943
[2002/43]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1251564
Date:23.10.2002
Language:EN
[2002/43]
Type: A3 Search report 
No.:EP1251564
Date:18.12.2002
[2002/51]
Search report(s)(Supplementary) European search report - dispatched on:EP07.11.2002
ClassificationIPC:H01L27/115, H01L21/8247, H01L21/336
[2002/51]
CPC:
H01L29/66825 (EP,US); H10B99/00 (KR); H10B41/30 (EP,US);
H10B69/00 (EP,US)
Former IPC [2002/43]H01L27/115, H01L21/8247
Designated contracting states[2003/37]
Former [2002/43]AT,  BE,  CH,  CY,  DE,  DK,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  TR 
TitleGerman:Festwerthalbleiterspeicherbauelement und dessen Herstellungsverfahren[2002/43]
English:Non-volatile semiconductor memory device and manufacturing method thereof[2002/43]
French:Dispositif de mémoire semi-conductrice non-volatile et son procédé de fabrication[2002/43]
Examination procedure19.06.2003Application deemed to be withdrawn, date of legal effect  [2004/27]
20.10.2003Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2004/27]
Parent application(s)   TooltipEP01111341.2  / EP1178533
Fees paidPenalty fee
Penalty fee Rule 85a EPC 1973
30.07.2003DE   M01   Not yet paid
30.07.2003FR   M01   Not yet paid
30.07.2003IT   M01   Not yet paid
Penalty fee Rule 85b EPC 1973
30.07.2003M01   Not yet paid
Additional fee for renewal fee
31.05.200303   M06   Not yet paid
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See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]JPH0372682  ;
 [XA]US5190887  (TANG DANIEL N [US], et al) [X] 1,4-7 * the whole document * [A] 2,3;
 [XA]EP0555039  (NAT SEMICONDUCTOR CORP [US]) [X] 1,3-5 * the whole document * [A] 2;
 [XY]US5366915  (KODAMA NORIAKI [JP]) [X] 1-6 * column 1, line 25 - column 5, line 68; figures 1A-5 * [Y] 7;
 [XA]US5737264  (SHIRAI HIROKI [JP]) [X] 1-5 * the whole document * [A] 6,7;
 [YA]US5891774  (UEDA NAOKI [JP], et al) [Y] 7 * the whole document * [A] 1-6;
 [XA]  - YOICHI OHSHIMA, "PROCESS AND DEVICE TECHNOLOGIES FOR 16MBIT EPROMS WITH LARGE-TILT- ANGLE IMPLANTED P-POCKET CELL", INTERNATIONAL ELECTRON DEVICES MEETING. SAN FRANCISCO, DEC. 9 - 12, 1990, NEW YORK, IEEE, US, (19901209), pages 95 - 98, XP000279543 [X] 1-5 * the whole document * [A] 6,7
 [A]  - PATENT ABSTRACTS OF JAPAN, (19910618), vol. 015, no. 236, Database accession no. (E - 1078), & JP03072682 A 19910327 (HITACHI LTD) [A] 1-5 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.