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Extract from the Register of European Patents

EP About this file: EP1291904

EP1291904 - GaN substrate formed over GaN layer having discretely formed minute holes produced by selective growth [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  03.09.2010
Database last updated on 07.06.2024
Most recent event   Tooltip03.09.2010Application deemed to be withdrawnpublished on 06.10.2010  [2010/40]
Applicant(s)For all designated states
FUJIFILM Corporation
26-30, Nishiazabu 2-chome
Minato-ku
Tokyo / JP
[N/P]
Former [2007/11]For all designated states
FUJIFILM Corporation
26-30, Nishiazabu 2-chome Minato-ku
Tokyo / JP
Former [2003/11]For all designated states
Fuji Photo Film Co., Ltd.
210 Nakanuma Minamiashigara-shi
Kanagawa-ken / JP
Inventor(s)01 / Kuniyasu, Toshiaki
Fuji Photo Film Co., Ltd., 798 Miyanodai
Kaisei-machi, Kanagawa-ken / JP
02 / Wada, Mitsugu
Fuji Photo Film Co., Ltd., 798 Miyanodai
Kaisei-machi, Kanagawa-ken / JP
03 / Fukunaga, Toshiaki
Fuji Photo Film Co., Ltd., 798 Miyanodai
Kaisei-machi, Kanagawa-ken / JP
 [2003/11]
Representative(s)Klunker . Schmitt-Nilson . Hirsch
Patentanwälte
Destouchesstraße 68
80796 München / DE
[N/P]
Former [2003/11]Klunker . Schmitt-Nilson . Hirsch
Winzererstrasse 106
80797 München / DE
Application number, filing date02019861.009.09.2002
[2003/11]
Priority number, dateJP2001027289510.09.2001         Original published format: JP 2001272895
JP2002013408909.05.2002         Original published format: JP 2002134089
[2003/11]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1291904
Date:12.03.2003
Language:EN
[2003/11]
Type: A3 Search report 
No.:EP1291904
Date:07.10.2009
[2009/41]
Search report(s)(Supplementary) European search report - dispatched on:EP03.09.2009
ClassificationIPC:H01L21/20, C30B29/38
[2003/11]
CPC:
C30B25/02 (EP,US); C30B25/18 (EP,US); C30B29/406 (EP,US);
H01L21/0237 (EP,US); H01L21/02458 (EP,US); H01L21/0254 (EP,US);
H01L21/02576 (EP,US); H01L21/02579 (EP,US); H01L21/0262 (EP,US);
H01L21/02639 (EP,US); H01L21/02647 (EP,US); H01L33/007 (EP,US) (-)
Designated contracting states[2010/24]
Former [2003/11]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  SK,  TR 
TitleGerman:GaN-Substrat, das auf einer feinen diskreten Löcher aufweisenden GaN-Schicht gebildet wurde, die durch selektives Wachstum hergestellt worden ist[2003/11]
English:GaN substrate formed over GaN layer having discretely formed minute holes produced by selective growth[2003/11]
French:Substrat de GaN formé sur une couche de GaN présentant des trous minces discrets réalisés par croissance sélective[2003/11]
Examination procedure08.04.2010Application deemed to be withdrawn, date of legal effect  [2010/40]
18.05.2010Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2010/40]
Fees paidRenewal fee
29.09.2004Renewal fee patent year 03
29.09.2005Renewal fee patent year 04
29.09.2006Renewal fee patent year 05
28.09.2007Renewal fee patent year 06
29.09.2008Renewal fee patent year 07
28.09.2009Renewal fee patent year 08
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]WO9920816  (CENTRE NAT RECH SCIENT [FR], et al) [A] 12,13,22,40 * page 3, line 6 - page 4, line 15 * * page 5, line 22 - page 7, line 26 *;
 [A]EP0942459  (NICHIA KAGAKU KOGYO KK [JP]) [A] 1-40 * paragraphs [0020] - [0025] - [0034] - [0037] - [0043] , [0052] , [0057] - [0061] *;
 [X]US6015979  (SUGIURA LISA [JP], et al) [X] 1,5,9,11-14,18,20-23,25,28,30-32,36,38-40 * column 11, line 8 - line 59 * * column 22, line 18 - line 61 * * column 28, line 5 - line 23 * * figure 19 *;
 [A]WO0055893  (MITSUBISHI CABLE IND LTD [JP], et al) [A] 1-40;
 [X]WO0057460  (MITSUBISHI CABLE IND LTD [JP], et al) [X] 1,5,10-14,19-23,25,29-32,37-40 * the whole document *;
 [X]JP2000277435  (MITSUBISHI CABLE IND LTD) [X] 1-8,11-17,20-27,30-35,38-40 * paragraphs [0003] , [0004] , [0011] - [0014] - [0017] , [0021] - [0023] * * figures 1(a)-(e) *;
 EP1178523  [ ] (MITSUBISHI CABLE IND LTD [JP]) [ ] * the whole document *;
 EP1184897  [ ] (MITSUBISHI CABLE IND LTD [JP]) [ ] * paragraphs [0029] - [0038] - [0104] - [0106] *;
 [A]  - VENNÉGUÈS P ET AL, "Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20000501), vol. 87, no. 9, ISSN 0021-8979, pages 4175 - 4181, XP012049874 [A] 1-40 * page 4175, column R, line 8 - line 30 * * page 4176, column R * * page 4177, column L, line 1 - line 15 *

DOI:   http://dx.doi.org/10.1063/1.373048
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