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EP1298712
European procedure
Extract from the Register of European Patents
EP About this file: EP1298712
| EP1298712 - Gate structure and method of forming the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 04.11.2011 Database last updated on 03.09.2024 | Most recent event Tooltip | 04.11.2011 | No opposition filed within time limit | published on 07.12.2011 [2011/49] | Applicant(s) | For all designated states Texas Instruments Incorporated 7839 Churchill Way Mail Station 3999 Dallas, Texas 75251 / US | [N/P] |
| Former [2010/52] | For all designated states Texas Instruments Incorporated 7839 Churchill Way Mail Station 3999 Dallas, Texas 75251 / US | ||
| Former [2003/14] | For all designated states Texas Instruments Incorporated 7839 Churchill Way, Mail Station 3999 Dallas, Texas 75251 / US | Inventor(s) | 01 /
Wallace, Robert M. 428 Park Bend Drive Richardson, TX 75081 / US | 02 /
Gnade, Bruce E. 2607 Sir Gawain Lewisville, TX 75056 / US | [2003/14] | Representative(s) | Holt, Michael Texas Instruments Limited European Patent Department 3rd Floor 401 Grafton Gate Milton Keynes MK9 1AQ / GB | [N/P] |
| Former [2003/14] | Holt, Michael Texas Instruments Ltd., EPD MS/13, 800 Pavilion Drive Northampton Business Park, Northampton NN4 7YL / GB | Application number, filing date | 02021976.2 | 30.09.2002 | [2003/14] | Priority number, date | US20010325519P | 28.09.2001 Original published format: US 325519 P | [2003/14] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1298712 | Date: | 02.04.2003 | Language: | EN | [2003/14] | Type: | A3 Search report | No.: | EP1298712 | Date: | 08.12.2004 | [2004/50] | Type: | B1 Patent specification | No.: | EP1298712 | Date: | 29.12.2010 | Language: | EN | [2010/52] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.10.2004 | Classification | IPC: | H01L21/28, H01L29/51, H01L29/10, H01L21/8238 | [2010/35] | CPC: |
H01L21/28185 (EP,US);
H01L21/28088 (EP,US);
H01L21/28114 (EP,US);
H01L21/28194 (EP,US);
H01L21/823807 (EP,US);
H01L21/823814 (EP,US);
H01L21/823842 (EP,US);
H01L21/823857 (EP,US);
H01L29/1054 (EP,US);
H01L29/42376 (EP,US);
H01L29/4966 (EP,US);
H01L29/517 (EP,US);
|
| Former IPC [2004/50] | H01L21/28, H01L29/51, H01L29/10, H01L29/49, H01L29/423, H01L21/336 | ||
| Former IPC [2003/48] | H01L21/28, H01L29/51, H01L29/10, H01L29/49 | ||
| Former IPC [2003/14] | H01L21/28, H01L29/51, H01L29/423, H01L29/10, H01L29/49 | Designated contracting states | DE, FR, GB [2005/35] |
| Former [2003/14] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, SK, TR | Title | German: | Gate-Struktur und Verfahren zur Herstellung | [2003/14] | English: | Gate structure and method of forming the same | [2003/14] | French: | Structure de grille et sa méthode de fabrication | [2003/14] | Examination procedure | 08.06.2005 | Examination requested [2005/32] | 28.11.2008 | Despatch of a communication from the examining division (Time limit: M06) | 08.04.2009 | Reply to a communication from the examining division | 31.08.2010 | Communication of intention to grant the patent | 10.11.2010 | Fee for grant paid | 10.11.2010 | Fee for publishing/printing paid | Opposition(s) | 30.09.2011 | No opposition filed within time limit [2011/49] | Fees paid | Renewal fee | 30.09.2004 | Renewal fee patent year 03 | 30.09.2005 | Renewal fee patent year 04 | 02.10.2006 | Renewal fee patent year 05 | 01.10.2007 | Renewal fee patent year 06 | 30.09.2008 | Renewal fee patent year 07 | 30.09.2009 | Renewal fee patent year 08 | 30.09.2010 | Renewal fee patent year 09 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A] - WILK G D ET AL, "Stable zirconium silicate gate dielectrics eposited directly on silicon", APPLIED PHYSICS LETTERS, (20000103), vol. 76, no. 1, pages 112 - 114, XP002256294 [A] 1-11 * the whole document * DOI: http://dx.doi.org/10.1063/1.125673 | [A] - LEE C H ET AL, "MOS CHARACTERISTICS OF ULTRA THIN RAPID THERMAL CVD ZRO2 AND ZR SILICATE GATE DIELECTRICS", INTERNATIONAL ELECTRON DEVICES MEETING 2000. IEDM. TECHNICAL DIGEST. SAN FRANCISCO, CA, DEC. 10 - 13, 2000, NEW YORK, NY: IEEE, US, (20001210), ISBN 0-7803-6439-2, pages 27 - 30, XP000988803 [A] 1-11 * the whole document * | [A] - QI W-J ET AL, "PERFORMANCE OF MOSFETS WITH ULTRA THIN ZRO2 AND ZR SILICATE GATE DIELECTRICS", 2000 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. HONOLULU, JUNE 13-15, 2000, SYMPOSIUM ON VLSI TECHNOLOGY, NEW YORK, NY: IEEE, US, (20000613), ISBN 0-7803-6306-X, pages 40 - 41, XP000970754 [A] 1-11 * the whole document * | [A] - WILK G D ET AL, "HIGH-KAPPA GATE DIELECTRICS: CURRENT STATUS AND MATERIALS PROPERTIES CONSIDERATIONS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20010515), vol. 89, no. 10, ISSN 0021-8979, pages 5243 - 5275, XP001049066 [A] 1-11 * page 5262, column L, line 19 - line 29 * * page 5262, column R, line 5 - line 24 * DOI: http://dx.doi.org/10.1063/1.1361065 | [DA] - WILK G D ET AL, "ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19990510), vol. 74, no. 19, ISSN 0003-6951, pages 2854 - 2856, XP000834679 [DA] 1-11 * the whole document * DOI: http://dx.doi.org/10.1063/1.124036 | [A] - WILK G D ET AL, "HAFNIUM AND ZIRCONIUM SILICATES FOR ADVANCED GATE DIELECTRICS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20000101), vol. 87, no. 1, ISSN 0021-8979, pages 484 - 492, XP000947641 [A] 1-11 * the whole document * DOI: http://dx.doi.org/10.1063/1.371888 | [A] - NGAI T ET AL, "TRANSCONDUCTANCE IMPROVEMENT IN SURFACE-CHANNEL SIGE P-METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS USING A ZRO2 GATE DIELECTRIC", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20010514), vol. 78, no. 20, ISSN 0003-6951, pages 3085 - 3087, XP001063717 [A] 1-11 * the whole document * DOI: http://dx.doi.org/10.1063/1.1372204 | [DA] - NGAI T ET AL, "Electrical properties of ZrO2 gate dielectric on SiGe", APPLIED PHYSICS LETTERS, (20000124), vol. 76, no. 4, pages 502 - 504, XP002298372 [DA] * the whole document * DOI: http://dx.doi.org/10.1063/1.125801 | by applicant | - WILK; WALLACE, "Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Silicon", APPL. PHYS. LETT., (1999), vol. 74, page 2854 | - NGAI ET AL., "Electrical Properties of Zr02 Gate Dielectric on SiGe", APPL.PHY.LETT., (2000), vol. 76, page 502 | - WILK G D ET AL., "Stable zirconium silicate gate dielectrics deposited directly on silicon", APPL. PHYS. LETT., (20000103), vol. 76, no. 1, pages 112 - 114 |