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EP1331710
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EP About this file: EP1331710
| EP1331710 - Semiconductor laser [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 17.09.2010 Database last updated on 19.10.2024 | Most recent event Tooltip | 17.09.2010 | Application deemed to be withdrawn | published on 20.10.2010 [2010/42] | Applicant(s) | For all designated states Avago Technologies Fiber IP (Singapore) Pte. Ltd. No. 1 Yishun Avenue 7 Singapore 768923 / SG | [2006/52] |
| Former [2003/31] | For all designated states Agilent Technologies, Inc. (a Delaware corporation) 395 Page Mill Road Palo Alto, CA 94303 / US | Inventor(s) | 01 /
Ash, Richard Mark 4 Westminster Drive Bury St.Edmunds, Suffolk IP33 2EZ / GB | 02 /
Park, Christopher Anthony Willowtree House, Church Road Bacton, Stowmarket, Suffolk IP14 4LJ / GB | [2003/31] | Representative(s) | Dilg, Haeusler, Schindelmann Patentanwaltsgesellschaft mbH Leonrodstraße 58 80636 München / DE | [N/P] |
| Former [2007/37] | Dilg, Haeusler, Schindelmann Patentanwaltsgesellschaft mbH Nußbaumstrasse 6 80336 München / DE | ||
| Former [2006/22] | Schoppe, Fritz, et al Schoppe, Zimmermann, Stöckeler & Zinkler Patentanwälte Postfach 246 82043 Pullach bei München / DE | ||
| Former [2003/31] | Coker, David Graeme Agilent Technologies UK Ltd, Legal Dept, Eskdale Road, Winnersh Triangle Wokingham, Berks RG41 5DZ / GB | Application number, filing date | 02250465.8 | 23.01.2002 | [2003/31] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1331710 | Date: | 30.07.2003 | Language: | EN | [2003/31] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 23.01.2003 | Classification | IPC: | H01S5/10, H01S5/06, H01S5/068 | [2003/31] | CPC: |
H01S5/1021 (EP,US);
H01S5/0607 (EP,US);
H01S5/068 (EP,US);
H01S5/02325 (EP,US);
H01S5/06804 (EP,US);
H01S5/06837 (EP,US);
| Designated contracting states | DE, FR, GB [2004/17] |
| Former [2003/31] | AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, TR | Title | German: | Halbleiterlaser | [2003/31] | English: | Semiconductor laser | [2003/31] | French: | Laser à semiconducteur | [2003/31] | Examination procedure | 30.01.2004 | Examination requested [2004/14] | 10.07.2009 | Despatch of a communication from the examining division (Time limit: M01) | 20.07.2009 | Reply to a communication from the examining division | 25.11.2009 | Communication of intention to grant the patent | 07.04.2010 | Application deemed to be withdrawn, date of legal effect [2010/42] | 18.05.2010 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2010/42] | Fees paid | Renewal fee | 26.01.2004 | Renewal fee patent year 03 | 20.01.2005 | Renewal fee patent year 04 | 27.01.2006 | Renewal fee patent year 05 | 29.01.2007 | Renewal fee patent year 06 | 25.01.2008 | Renewal fee patent year 07 | 14.01.2009 | Renewal fee patent year 08 | Penalty fee | Additional fee for renewal fee | 31.01.2010 | 09 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]JP2000031603 ; | [A] - EBELING K J, "ABSTIMMBARE, MONOMODE EMITTIERENDE HALBLEITERLASER. TUNABLE SINGLE-LONGITUDINAL MODE EMISSION OF SEMICONDUCTOR LASERS", LASER UND OPTOELEKTRONIK, FACHVERLAG GMBH. STUTTGART, DE, (19840901), vol. 16, no. 3, ISSN 0722-9003, pages 176 - 186, XP000712300 [A] 1,14,18,19 * page 180, paragraph 4 * | [A] - SHIN K-C ET AL, "LOW THRESHOLD CURRENT DENSITY OPERATION OF GAINASP-INP LASER WITH MULTIPLE REFLECTOR MICROCAVITIES", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, (19951001), vol. 7, no. 10, ISSN 1041-1135, pages 1119 - 1121, XP000537212 [A] 1,14,18,19 * figure 1 * DOI: http://dx.doi.org/10.1109/68.466562 | [A] - HUNG C Y ET AL, "PIEZOELECTRICALLY INDUCED STRESS TUNING OF ELECTRO-OPTIC DEVICES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19911230), vol. 59, no. 27, ISSN 0003-6951, pages 3598 - 3600, XP000257112 [A] 1,14,18,19 * paragraph [0004]; figures 1,3 * DOI: http://dx.doi.org/10.1063/1.105644 | [A] - PATENT ABSTRACTS OF JAPAN, (20000831), vol. 2000, no. 04, & JP2000031603 A 20000128 (SUMITOMO ELECTRIC IND LTD) [A] 1,14,18,19 * abstract * | [A] - COHEN D A ET AL, "Temperature compensation of the threshold current, differential efficiency, and refractive index of a GaInAs/InP MQW diode laser mounted on a bimetallic heatsink", ELECTRONICS LETTERS, IEE STEVENAGE, GB, (19961121), vol. 32, no. 24, ISSN 0013-5194, pages 2245 - 2247, XP006005988 [A] 1,14,18,19 * the whole document * DOI: http://dx.doi.org/10.1049/el:19961481 |