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Extract from the Register of European Patents

EP About this file: EP1282137

EP1282137 - Redundancy circuit and method for replacing defective memory cells in a flash memory device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  17.07.2009
Database last updated on 22.05.2024
Most recent event   Tooltip21.08.2009Lapse of the patent in a contracting statepublished on 23.09.2009  [2009/39]
Applicant(s)For all designated states
STMicroelectronics, Inc.
1310 Electronics Drive Carrollton
Texas 75006-5309 / US
[2008/37]
Former [2003/06]For all designated states
STMicroelectronics, Inc.
1310 Electronics Drive
Carrollton, Texas 75006-5309 / US
Inventor(s)01 / Matarrese, Stella
37250 Sequoia Gerrace No. 2035
Fremont, California 94536 / US
02 / Fasoli, Luca Giovanni
37250 Sequoia Terrace No. 2035
Fremont, California 94536 / US
 [2003/06]
Representative(s)Style, Kelda Camilla Karen, et al
Page White & Farrer Limited
Bedford House
21A John Street
London WC1N 2BF / GB
[N/P]
Former [2003/06]Style, Kelda Camilla Karen, et al
Page White & Farrer, 54 Doughty Street
London WC1N 2LS / GB
Application number, filing date02255361.431.07.2002
[2003/06]
Priority number, dateUS2001092217602.08.2001         Original published format: US 922176
[2003/06]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1282137
Date:05.02.2003
Language:EN
[2003/06]
Type: B1 Patent specification 
No.:EP1282137
Date:10.09.2008
Language:EN
[2008/37]
Search report(s)(Supplementary) European search report - dispatched on:EP04.12.2002
ClassificationIPC:G11C29/00
[2003/06]
CPC:
G11C29/808 (EP,US); G11C29/81 (EP,US)
Designated contracting statesDE,   FR,   GB,   IT [2003/43]
Former [2003/06]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  SE,  SK,  TR 
TitleGerman:Redundanzschaltung und Verfahren zum Ersetzen fehlerhafter Speicherzellen eines Flash-Speichers[2003/06]
English:Redundancy circuit and method for replacing defective memory cells in a flash memory device[2003/06]
French:Circuit redondant et méthode pour remplacer les cellules de mémoire défectueuses dans une mémoire flash[2003/06]
Examination procedure31.07.2003Examination requested  [2003/40]
11.09.2003Despatch of a communication from the examining division (Time limit: M06)
10.03.2004Reply to a communication from the examining division
02.08.2004Despatch of a communication from the examining division (Time limit: M06)
01.03.2005Reply to a communication from the examining division
26.01.2006Despatch of a communication from the examining division (Time limit: M06)
28.07.2006Reply to a communication from the examining division
06.08.2007Communication of intention to grant the patent
22.01.2008Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time
19.03.2008Fee for grant paid
19.03.2008Fee for publishing/printing paid
Opposition(s)11.06.2009No opposition filed within time limit [2009/34]
Request for further processing for:The application is deemed to be withdrawn due to failure to fulfill actions required for granting the patent
19.03.2008Request for further processing filed
19.03.2008Full payment received (date of receipt of payment)
Request granted
28.04.2008Decision despatched
01.03.2005Request for further processing filed
01.03.2005Full payment received (date of receipt of payment)
Request granted
14.03.2005Decision despatched
Fees paidRenewal fee
08.06.2004Renewal fee patent year 03
13.07.2005Renewal fee patent year 04
12.07.2006Renewal fee patent year 05
13.07.2007Renewal fee patent year 06
14.07.2008Renewal fee patent year 07
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipIT10.09.2008
[2009/39]
Documents cited:Search[X]WO9631882  (MICRON TECHNOLOGY INC [US]) [X] 1-23 * abstract * * page 3, line 1 - page 4, line 26 * * page 9, line 25 - page 12, line 5 * * page 19 - page 21 * * claims 1,9,11-14 * * figures 1,2,8 *;
 [X]EP0745995  (SGS THOMSON MICROELECTRONICS [IT]) [X] 1-23 * abstract * * column 9, line 25 - column 10, line 13; figure 10 *;
 [A]US5592417  (MIRABEL JEAN-MICHEL [FR]) [A] 1-23* column 1, line 1 - column 2, line 48 *;
 [X]DE19825012  (SIEMENS AG [DE]) [X] 1-23 * the whole document *;
 [X]US5966336  (HORIGUCHI MASASHI [JP], et al) [X] 1-23 * abstract * * column 20, line 45 - column 22, line 64; figures 26,27,30; claims 1-6 *
ExaminationUS5808945
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.