blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...
blank News flashes

News flashes

New version of the European Patent Register - SPC information for Unitary Patents.

2024-03-06

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
FAQ - Register Alert
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP1405936

EP1405936 - METHOD FOR MANUFACTURING ALUMINUM NITRIDE BULK SINGLE CRYSTAL [Right-click to bookmark this link]
Former [2004/15]METHOD AND EQUIPMENT FOR MANUFACTURING ALUMINUM NITRIDE BULK SINGLE CRYSTAL
[2008/21]
StatusNo opposition filed within time limit
Status updated on  30.10.2009
Database last updated on 28.05.2024
Most recent event   Tooltip30.09.2011Lapse of the patent in a contracting state
New state(s): CY, TR		published on 02.11.2011  [2011/44]
Applicant(s)For all designated states
AMMONO Sp. z o.o.
Czerwonego Krzyza 2/31
00-377 Warsaw / PL
For all designated states
Nichia Corporation
491-100, Oka
Kaminaka-cho
Anan-shi Tokushima 774-8601 / JP
[N/P]
Former [2008/52]For all designated states
AMMONO Sp. z o.o.
Czerwonego Krzyza 2/31
00-377 Warsaw / PL
For all designated states
Nichia Corporation
491-100, Oka, Kaminaka-cho
Anan-shi, Tokushima 774-8601 / JP
Former [2004/24]For all designated states
AMMONO Sp. z o.o.
Czerwonego Krzyza 2/31
00-377 Warsaw / PL
For all designated states
Nichia Corporation
491-100, Oka, Kaminaka-cho
Anan-shi, Tokushima 774-8601 / JP
Former [2004/15]For all designated states
Ammono SP.ZO.O.
Czerwonego Krzyza 2/31
00-377 Warsaw / PL
For all designated states
Nichia Corporation
491-100, Oka, Kaminaka-cho
Anan-shi, Tokushima 774-8601 / JP
Inventor(s)01 / DWILINSKI, Robert
ul. Zgrupowania Zmija 23/12
PL-01-875 Warsaw / PL
02 / DORADZINSKI, Roman
ul. Belgradzka 4/115
PL-02-793 Warsaw / PL
03 / GARCZYNSKI, Jerzy
ul. Baczynskiego 20/7
PL-05-092 Lomianki / PL
04 / SIERZPUTOWSKI, Leszek
304, Huntington Road
Union, NJ 07083-7944 / US
05 / KANBARA, Yasuo, c/o NICHIA CORPORATION
491-100, Oka, Kaminaka-cho
Anan-shi, Tokushima 774-8601 / JP
 [2004/15]
Representative(s)Vossius & Partner Patentanwälte Rechtsanwälte mbB
Siebertstrasse 3
81675 München / DE
[N/P]
Former [2008/35]Vossius & Partner
Siebertstrasse 3
81675 München / DE
Former [2004/15]VOSSIUS & PARTNER
Siebertstrasse 4
81675 München / DE
Application number, filing date02733363.206.06.2002
[2004/15]
WO2002JP05624
Priority number, datePL2001034791806.06.2001         Original published format: PL 34791801
[2004/15]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO02101124
Date:19.12.2002
Language:EN
[2002/51]
Type: A1 Application with search report 
No.:EP1405936
Date:07.04.2004
Language:EN
The application published by WIPO in one of the EPO official languages on 19.12.2002 takes the place of the publication of the European patent application.
[2004/15]
Type: B1 Patent specification 
No.:EP1405936
Date:24.12.2008
Language:EN
[2008/52]
Search report(s)International search report - published on:JP19.12.2002
(Supplementary) European search report - dispatched on:EP12.07.2007
ClassificationIPC:C30B29/38
[2004/15]
CPC:
C30B29/403 (EP,US); C30B29/38 (KR); C30B7/00 (EP,US);
C30B7/10 (EP,US)
Designated contracting statesAT,   BE,   CH,   CY,   DE,   DK,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   TR [2004/15]
Extension statesALNot yet paid
LT05.01.2004
LV05.01.2004
MKNot yet paid
RO05.01.2004
SI05.01.2004
TitleGerman:VERFAHREN ZUR HERSTELLUNG VON ALUMINIUMNITRID-VOLUMENEINKRISTALLEN[2008/21]
English:METHOD FOR MANUFACTURING ALUMINUM NITRIDE BULK SINGLE CRYSTAL[2008/21]
French:PROCEDE DE PRODUCTION D'UN MONOCRISTAL NON EPITAXIE DE NITRURE D'ALUMINIUM[2008/21]
Former [2004/15]VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON ALUMINIUMNITRID-VOLUMENEINKRISTALLEN
Former [2004/15]METHOD AND EQUIPMENT FOR MANUFACTURING ALUMINUM NITRIDE BULK SINGLE CRYSTAL
Former [2004/15]PROCEDE ET MATERIEL DE PRODUCTION D'UN MONOCRISTAL NON EPITAXIE DE NITRURE D'ALUMINIUM
Entry into regional phase05.01.2004Translation filed 
05.01.2004National basic fee paid 
05.01.2004Search fee paid 
05.01.2004Designation fee(s) paid 
05.01.2004Examination fee paid 
Examination procedure24.12.2002Request for preliminary examination filed
International Preliminary Examining Authority: JP
05.01.2004Examination requested  [2004/15]
10.10.2007Amendment by applicant (claims and/or description)
14.11.2007Despatch of a communication from the examining division (Time limit: M04)
25.03.2008Reply to a communication from the examining division
26.06.2008Communication of intention to grant the patent
03.11.2008Fee for grant paid
03.11.2008Fee for publishing/printing paid
Opposition(s)25.09.2009No opposition filed within time limit [2009/49]
Fees paidRenewal fee
30.06.2004Renewal fee patent year 03
30.06.2005Renewal fee patent year 04
29.06.2006Renewal fee patent year 05
29.06.2007Renewal fee patent year 06
31.03.2008Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT24.12.2008
BE24.12.2008
CY24.12.2008
DK24.12.2008
FI24.12.2008
IT24.12.2008
TR24.12.2008
SE24.03.2009
GR25.03.2009
ES04.04.2009
PT25.05.2009
IE06.06.2009
LU06.06.2009
CH30.06.2009
LI30.06.2009
MC30.06.2009
[2011/43]
Former [2011/21]AT24.12.2008
BE24.12.2008
DK24.12.2008
FI24.12.2008
IT24.12.2008
SE24.03.2009
GR25.03.2009
ES04.04.2009
PT25.05.2009
IE06.06.2009
LU06.06.2009
CH30.06.2009
LI30.06.2009
MC30.06.2009
Former [2011/14]AT24.12.2008
BE24.12.2008
DK24.12.2008
FI24.12.2008
IT24.12.2008
SE24.03.2009
GR25.03.2009
ES04.04.2009
PT25.05.2009
IE06.06.2009
CH30.06.2009
LI30.06.2009
MC30.06.2009
Former [2010/47]AT24.12.2008
BE24.12.2008
DK24.12.2008
FI24.12.2008
SE24.03.2009
GR25.03.2009
ES04.04.2009
PT25.05.2009
IE06.06.2009
CH30.06.2009
LI30.06.2009
MC30.06.2009
Former [2010/21]AT24.12.2008
BE24.12.2008
DK24.12.2008
FI24.12.2008
SE24.03.2009
ES04.04.2009
PT25.05.2009
IE06.06.2009
CH30.06.2009
LI30.06.2009
MC30.06.2009
Former [2010/07]AT24.12.2008
BE24.12.2008
DK24.12.2008
FI24.12.2008
SE24.03.2009
ES04.04.2009
PT25.05.2009
MC30.06.2009
Former [2009/46]AT24.12.2008
BE24.12.2008
DK24.12.2008
FI24.12.2008
SE24.03.2009
ES04.04.2009
PT25.05.2009
Former [2009/40]AT24.12.2008
BE24.12.2008
FI24.12.2008
SE24.03.2009
ES04.04.2009
PT25.05.2009
Former [2009/38]BE24.12.2008
FI24.12.2008
SE24.03.2009
ES04.04.2009
PT25.05.2009
Former [2009/33]BE24.12.2008
FI24.12.2008
ES04.04.2009
Former [2009/32]BE24.12.2008
FI24.12.2008
Former [2009/25]FI24.12.2008
Documents cited:Search[X]US5456204  (DIMITROV VESSELIN S [US], et al) [X] 18-23* column 4, line 9 - line 65 *;
 [X]FR2796657  (THOMSON CSF [FR]) [X] 1-38 * the whole document *
International search[A]  - KETCHUM DOUGLAS R. ET AL., "Crystal growth of gallium nitride in supercritical ammonia", JOURNAL OF CRYSTAL GROWTH, (20010103), vol. 222, pages 431 - 434, XP004314417

DOI:   http://dx.doi.org/10.1016/S0022-0248(00)00853-8
 [A]  - DWILINSKI R. ET AL., "AMMONO method of GaN and A1N production", DIAMOND AND RELATED MATERIALS, (1998), vol. 7, no. 9, pages 1348 - 1350, XP000667687

DOI:   http://dx.doi.org/10.1016/S0925-9635(98)00205-2
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.