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EP About this file: EP1428250

EP1428250 - CHEMICAL SURFACE DEPOSITION OF ULTRA-THIN SEMICONDUCTORS [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 19.04.2013 Database last updated on 14.09.2024
Most recent event Tooltip	19.04.2013	Application deemed to be withdrawn	published on 22.05.2013 [2013/21]
Applicant(s)	For all designated states UNIVERSITY OF DELAWARE Office of the Vice Provost for Research, 210 Hullihen Hall Newark, DE 19716-1551 / US
	[N/P]
Former [2004/25]	For all designated states UNIVERSITY OF DELAWARE Office of the Vice Provost for Research, 210 Hullihen Hall Newark, DE 19716-1551 / US
Inventor(s)	01 / MCCANDLESS, Brian, E. 243 W. Main Street Elkton, MD 21921 / US
	02 / SHAFARMAN, William, N. 1905 N. Van Buren Street Wilmington, DE 19802 / US
	[2004/25]
Representative(s)	Valkonet, Rutger, et al Algemeen Octrooi- en Merkenbureau P.O. Box 645 5600 AP Eindhoven / NL
	[N/P]
Former [2008/42]	Valkonet, Rutger, et al Algemeen Octrooi- en Merkenbureau P.O. Box 645 5600 AP Eindhoven / NL
Former [2004/25]	Valkonet, Rutger, et al Algemeen Octrooi- en Merkenbureau P.O. Box 645 5600 AP Eindhoven / NL
Application number, filing date	02768543.7	14.08.2002
	[2004/25]
	WO2002US25862
Priority number, date	US20010942536	30.08.2001 Original published format: US 942536
	[2004/25]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO03021648
	Date:	13.03.2003
	Language:	EN
	[2003/11]
	Type:	A1 Application with search report
	No.:	EP1428250
	Date:	16.06.2004
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 13.03.2003 takes the place of the publication of the European patent application.
	[2004/25]
Search report(s)	International search report - published on:	US	13.03.2003
	(Supplementary) European search report - dispatched on:	EP	28.09.2009
Classification	IPC:	H01L21/36	[2009/44]
	CPC:	H01L31/1836 (EP,US); C23C18/1204 (EP,US); C23C18/1225 (EP,US); C23C18/1291 (EP,US); C23C26/02 (EP,US); C23C6/00 (EP,US); (+) H01L21/0237 (EP,US); H01L21/02422 (EP,US); H01L21/02485 (EP,US); H01L21/02491 (EP,US); H01L21/02502 (EP,US); H01L21/02551 (EP,US); H01L21/02557 (EP,US); H01L21/02562 (EP,US); H01L21/02568 (EP,US); H01L21/02628 (EP,US); H01L31/073 (EP,US); H01L31/0749 (EP,US); Y02E10/541 (EP,US); Y02E10/543 (EP,US); Y02P70/50 (EP,US) (-)
	Former IPC [2004/25]	H01L21/20, H01L21/36
Designated contracting states	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LI, LU, MC, NL, PT, SE, SK, TR [2004/25]
Extension states	AL	20.02.2004
	LT	20.02.2004
	LV	20.02.2004
	MK	20.02.2004
	RO	20.02.2004
	SI	20.02.2004
Title	German:	CHEMISCHE OBERFLÄCHENABLAGERUNG ULTRADÜNNER HALBLEITER	[2004/25]
	English:	CHEMICAL SURFACE DEPOSITION OF ULTRA-THIN SEMICONDUCTORS	[2004/25]
	French:	DEPOSITION CHIMIQUE EN SURFACE DE SEMI-CONDUCTEURS ULTRA MINCES	[2004/25]
Entry into regional phase	20.02.2004	National basic fee paid
	20.02.2004	Search fee paid
	20.02.2004	Designation fee(s) paid
	20.02.2004	Examination fee paid
Examination procedure	11.03.2003	Request for preliminary examination filed International Preliminary Examining Authority: US
	20.02.2004	Examination requested [2004/25]
	11.12.2009	Despatch of a communication from the examining division (Time limit: M06)
	15.06.2010	Reply to a communication from the examining division
	06.07.2012	Despatch of a communication from the examining division (Time limit: M04)
	17.11.2012	Application deemed to be withdrawn, date of legal effect [2013/21]
	04.01.2013	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2013/21]
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 11.12.2009
Fees paid	Renewal fee
	31.08.2004	Renewal fee patent year 03
	19.08.2005	Renewal fee patent year 04
	29.08.2006	Renewal fee patent year 05
	29.08.2007	Renewal fee patent year 06
	25.08.2008	Renewal fee patent year 07
	25.08.2009	Renewal fee patent year 08
	25.08.2010	Renewal fee patent year 09
	25.08.2011	Renewal fee patent year 10
	Penalty fee
	Additional fee for renewal fee
	31.08.2012	11 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XY]US3148084 (HILL JAMES E, et al) [X] 1-27,29-32 * claim 1 * [Y] 28;
		[XY]US3880633 (JORDAN JOHN F, et al) [X] 1-27,29-32 * claim - * [Y] 28;
		[A]US4261802 (FULOP GABOR F, et al) [A] 1-32 * column 8, line 63 - column 9, line 12 *;
		[XY]US4447335 (LOEFFLER OTTO E [US], et al) [X] 1-27,29-32 * example B; claim 1 * [Y] 28;
		[Y]US5689125 (VACCARO KENNETH [US], et al) [Y] 28 * column 2, lines 26-40 *;
		[A] - MONDAL A ET AL, "Deposition of cadmium chalcogenide thin films by a solution growth technique using triethanolamine as a complexing agent", SOLAR ENERGY MATERIALS, NORTH-HOLLAND PUBLISHING COMPANY, AMSTERDAM, NL, vol. 7, no. 4, ISSN 0165-1633, (19830101), pages 431 - 438, (20030303), XP009122777 [A] 1-32 * 2. Experimental * DOI: http://dx.doi.org/10.1016/0165-1633(83)90016-3
		[A] - KAUR I ET AL, "Growth kinetics and polymorphism of chemically deposited CdS films", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, (19800401), vol. 127, no. 4, ISSN 0013-4651, pages 943 - 948, XP009122768 [A] 1-32 * page 944, column L, line 18 - column R, line 16 *
	International search	[Y]US4095006 (JORDAN JOHN FRANCIS, et al);
		[Y]US5112410 (CHEN WEN S [US])
		[Y] - NAIR ET AL., "Opto-electronic characteristics of chemically deposited cadmium sulphide thin films", SEMICOND. SCI. TECHNOL., (1988), vol. 3, pages 134 - 145, XP002959149 DOI: http://dx.doi.org/10.1088/0268-1242/3/2/010
		[Y] - CHU ET AL., "Solution-grown cadmium sulfide films for photovoltaic devices", (1992), vol. 139, no. 9, pages 2243 - 2246, XP008102705 DOI: http://dx.doi.org/10.1149/1.2221246

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