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Extract from the Register of European Patents

EP About this file: EP1454360

EP1454360 - TRENCH MOSFET DEVICE WITH IMPROVED ON−RESISTANCE [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  28.07.2017
Database last updated on 06.07.2024
Most recent event   Tooltip28.07.2017Refusal of applicationpublished on 30.08.2017  [2017/35]
Applicant(s)For all designated states
GENERAL SEMICONDUCTOR, Inc.
10 Melville Park Road
Melville, NY 11747 / US
[2004/37]
Inventor(s)01 / HSHIEH, Fwu-Iuan
20768 Sevilla Lane
Saratoga, CA 95070 / US
02 / SO, Koon, Chong, c/o General Semiconductor, Inc.
10 Melville Park Road
Melville, NY 11747 / US
03 / AMATO, John, E.
585 Pacheco Drive
Tracy, CA 95376 / US
04 / TSUI, Yan, Man
4409 Drywood Court
Union City, CA 94587 / US
 [2004/43]
Former [2004/37]01 / HSHIEH, Fwu-Iuan
20768 Sevilla Lane
Saratoga, CA 95070 / US
02 / SO, Koon, Chong
591 Woodview Terrace
Fremont, CA 94539 / US
03 / AMATO, John, E.
585 Pacheco Drive
Tracy, CA 95376 / US
04 / TSUI, Yan, Man
4409 Drywood Court
Union City, CA 94587 / US
Representative(s)Jungblut, Bernhard Jakob, et al
Jungblut & Seuss
Patentanwälte
Wittestraße 30 J
13509 Berlin / DE
[N/P]
Former [2007/05]Jungblut, Bernhard Jakob, et al
JUNGBLUT & SEUSS Patentanwälte Max-Dohrn-Strasse 10
10589 Berlin / DE
Former [2004/37]Jungblut, Bernhard Jakob, Dr., et al
Albrecht, Lüke & Jungblut, Patentanwälte, Gelfertstrasse 56
14195 Berlin / DE
Application number, filing date02782334.320.11.2002
[2004/37]
WO2002US37265
Priority number, dateUS2001099911621.11.2001         Original published format: US 999116
[2004/37]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO03046997
Date:05.06.2003
Language:EN
[2003/23]
Type: A1 Application with search report 
No.:EP1454360
Date:08.09.2004
Language:EN
The application published by WIPO in one of the EPO official languages on 05.06.2003 takes the place of the publication of the European patent application.
[2004/37]
Search report(s)International search report - published on:US05.06.2003
(Supplementary) European search report - dispatched on:EP19.11.2008
ClassificationIPC:H01L29/78, H01L21/336, H01L29/08, H01L29/36
[2008/51]
CPC:
H01L29/7813 (EP,KR,US); H01L21/02521 (KR); H01L21/0455 (KR);
H01L29/0878 (EP,KR,US); H01L29/66734 (EP); H01L29/7812 (KR);
H01L2924/13091 (KR) (-)
Former IPC [2004/37]H01L29/76, H01L29/94, H01L31/062, H01L31/113, H01L31/119, H01L29/74, H01L21/336, H01L21/3205, H01L21/8238, H01L21/4763, H01L21/20
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   SK,   TR [2004/37]
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
RONot yet paid
SINot yet paid
TitleGerman:GRABEN-MOSFET-BAUELEMENT MIT VERBESSERTEM ON-WIDERSTAND[2004/37]
English:TRENCH MOSFET DEVICE WITH IMPROVED ON−RESISTANCE[2004/37]
French:TRANSISTOR MOS A TRANCHEE PRESENTANT UNE MEILLEURE RESISTANCE A L'ETAT PASSANT[2004/37]
Entry into regional phase28.05.2004National basic fee paid 
28.05.2004Search fee paid 
28.05.2004Designation fee(s) paid 
28.05.2004Examination fee paid 
Examination procedure23.06.2003Request for preliminary examination filed
International Preliminary Examining Authority: US
28.05.2004Examination requested  [2004/37]
09.07.2004Amendment by applicant (claims and/or description)
02.07.2009Despatch of a communication from the examining division (Time limit: M06)
13.01.2010Application deemed to be withdrawn, date of legal effect  [2010/26]
26.04.2010Reply to a communication from the examining division
deletedDeletion: Application deemed to be withdrawn, date of legal effect  [2011/51]
16.02.2010Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2011/51]
08.03.2017Application refused, date of legal effect [2017/35]
08.03.2017Date of oral proceedings
12.04.2017Despatch of communication that the application is refused, reason: substantive examination [2017/35]
12.04.2017Minutes of oral proceedings despatched
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  02.07.2009
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the examination report
26.04.2010Request for further processing filed
26.04.2010Full payment received (date of receipt of payment)
Request granted
18.11.2011Decision despatched
Request for re-establishment of rights:16.08.2010Date of receipt
Fees paidRenewal fee
22.11.2004Renewal fee patent year 03
29.11.2005Renewal fee patent year 04
27.11.2006Renewal fee patent year 05
27.11.2007Renewal fee patent year 06
25.11.2008Renewal fee patent year 07
25.11.2009Renewal fee patent year 08
24.11.2010Renewal fee patent year 09
23.11.2011Renewal fee patent year 10
26.11.2012Renewal fee patent year 11
27.11.2013Renewal fee patent year 12
26.11.2014Renewal fee patent year 13
30.11.2015Renewal fee patent year 14
28.11.2016Renewal fee patent year 15
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Documents cited:Search[X]US4893160  (BLANCHARD RICHARD A [US]) [X] 1-10 * figure 4 and associated text *;
 [X]US5442214  (YANG SHENG-HSING [TW]) [X] 1-10 * figure 2 and associated text *;
 [X]EP1113501  (SILICONIX INC [US]) [X] 1-7,10* figures 8,14 and associated text *;
 [X]US6262453  (HSHIEH FWU-IUAN [US]) [X] 1-10 * figures 2,3 and associated text *
International search[X]US5442214  (YANG SHENG-HSING [TW]);
 [Y]US6084268  (DE FRESART EDOUARD D [US], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.