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EP1376704
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EP About this file: EP1376704
| EP1376704 - Semiconductor device with field-shaping regions [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 02.07.2010 Database last updated on 19.07.2024 | Most recent event Tooltip | 02.07.2010 | Application deemed to be withdrawn | published on 04.08.2010 [2010/31] | Applicant(s) | For all designated states SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED 2-1, Ohtemachi-2-chome, Chiyoda-ku Tokyo, 100-0004 / JP | [N/P] |
| Former [2004/01] | For all designated states SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED 2-1, Ohtemachi-2-chome, Chiyoda-ku Tokyo, 100-0004 / JP | Inventor(s) | 01 /
Kurosaki, Toru, Shindengen Electric Manufacturing Co., Ltd., Hanno Factory, 10-13, Minami-cho Hanno-shi, Saitama 357-8585 / JP | 02 /
Shishido, Hiroaki, Shindengen Electric Manufact. Co., Ltd., Hanno Factory, 10-13, Minami-cho Hanno-shi, Saitama 357-8585 / JP | 03 /
Kitada, Mizue, Shindengen Electric Manufacturing Co., Ltd., Hanno Factory, 10-13, Minami-cho Hanno-shi, Saitama 357-8585 / JP | 04 /
Kunori, Shinji, Shindengen Electric Manufacturing Co., Ltd., Hanno Factory, 10-13, Minami-cho Hanno-shi, Saitama 357-8585 / JP | 05 /
Oshima, Kosuke, Shindengen Electric Manufacturing Co., Ltd., Hanno Factory, 10-13, Minami-cho Hanno-shi, Saitama 357-8585 / JP | [2004/01] | Representative(s) | Körber, Martin Hans, et al Mitscherlich PartmbB Patent- und Rechtsanwälte Postfach 33 06 09 80066 München / DE | [N/P] |
| Former [2004/01] | Körber, Martin, Dipl.-Phys., et al Mitscherlich & Partner Patentanwälte Sonnenstrasse 33 80331 München / DE | Application number, filing date | 03014700.3 | 27.06.2003 | [2004/01] | Priority number, date | JP20020190017 | 28.06.2002 Original published format: JP 2002190017 | [2004/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1376704 | Date: | 02.01.2004 | Language: | EN | [2004/01] | Type: | A3 Search report | No.: | EP1376704 | Date: | 10.09.2008 | [2008/37] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 11.08.2008 | Classification | IPC: | H01L29/78, H01L29/872, H01L29/739, H01L29/06, H01L21/336, H01L21/331, H01L21/334, // H01L29/423 | [2008/37] | CPC: |
H01L29/7813 (EP,US);
H01L29/0619 (EP,US);
H01L29/0634 (EP,US);
H01L29/0692 (EP,US);
H01L29/0696 (EP,US);
H01L29/66348 (EP,US);
|
| Former IPC [2004/01] | H01L29/78, H01L29/739, H01L29/872, H01L29/06, H01L21/336, H01L21/331, H01L21/334 | Designated contracting states | DE, GB, IT [2009/20] |
| Former [2004/01] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Title | German: | Halbleiteranordnung mit Feldformungsgebieten | [2004/01] | English: | Semiconductor device with field-shaping regions | [2004/01] | French: | Dispositif semi-conducteur comprenant des regions de façonnage de champ | [2004/01] | Examination procedure | 07.10.2008 | Examination requested [2008/47] | 11.03.2009 | Loss of particular rights, legal effect: designated state(s) | 16.04.2009 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, FR, GR, HU, IE, LU, MC, NL, PT, RO, SE, SI, SK, TR | 29.09.2009 | Despatch of a communication from the examining division (Time limit: M04) | 10.02.2010 | Application deemed to be withdrawn, date of legal effect [2010/31] | 19.03.2010 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2010/31] | Fees paid | Renewal fee | 29.06.2005 | Renewal fee patent year 03 | 29.06.2006 | Renewal fee patent year 04 | 29.06.2007 | Renewal fee patent year 05 | 27.06.2008 | Renewal fee patent year 06 | 29.06.2009 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP1085577 (SHINDENGEN ELECTRIC MFG [JP]) [A] 6,9,10 * paragraph [0031]; figure 2 * * paragraph [0073] - paragraph [0075]; figure 36 ** paragraph [0076] - paragraph [0077]; figure 40 *; | [A]EP1111685 (HITACHI LTD [JP]) [A] 1-4,6,8,9,11 * paragraph [0058] - paragraph [0080]; figures 1,2,4 * * paragraph [0140] - paragraph [0142]; figure 35 * * paragraph [0146] - paragraph [0147]; figure 38 *; | [A]EP1130653 (SHINDENGEN ELECTRIC MFG [JP]) [A] 1,2,5-9 * paragraph [0036] - paragraph [0053]; figures 1-21 * * paragraph [0059]; figure 22 * * paragraph [0063]; figure 28 *; | [X]US2002074596 (SUZUKI TAKASHI [JP], et al) [X] 1-11 * paragraph [0143]; figures 15,16A,17A * * paragraph [0047] - paragraph [0052]; figure 1 *; | [A] - UEDA D ET AL, "A NEW VERTICAL POWER MOSFET STRUCTURE WITH EXTREMELY REDUCED ON-RESISTANCE", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, NEW YORK, NY, USA, (198501), vol. ED-32, no. 1, ISSN 0018-9383, pages 2 - 6, XP000836740 [A] 5 * paragraph II; figures 1,2 * DOI: http://dx.doi.org/10.1109/T-ED.1985.21900 |