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Extract from the Register of European Patents

EP About this file: EP1372191

EP1372191 - Method for depositing a device feature on a substrate [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  03.06.2005
Database last updated on 02.09.2024
Most recent event   Tooltip03.06.2005Application deemed to be withdrawnpublished on 20.07.2005  [2005/29]
Applicant(s)For all designated states
Filtronic Compound Semiconductor Limited
Heighington Lane Business Park Newton Ayecliffe
Co. Durham, DL5 6JW / GB
[N/P]
Former [2003/51]For all designated states
Filtronic Compound Semiconductor Limited
Heighington Lane Business Park
Newton Ayecliffe, Co. Durham, DL5 6JW / GB
Inventor(s)01 / Phillips, Carl Christopher, Filtronic Compound
Semiconductors Ltd, Heighington Lane Business Park
Newton Aycliffe, Co. Durham DL5 6JW / GB
 [2003/51]
Representative(s)McDonough, Jonathan
Urquhart-Dykes & Lord LLP
Tower North Central
Merrion Way
Leeds LS2 8PA / GB
[N/P]
Former [2003/51]McDonough, Jonathan
Urquhart-Dykes & Lord, Tower House, Merrion Way
Leeds LS2 8PA / GB
Application number, filing date03253753.212.06.2003
[2003/51]
Priority number, dateGB2002001369514.06.2002         Original published format: GB 0213695
[2003/51]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1372191
Date:17.12.2003
Language:EN
[2003/51]
Type: A3 Search report 
No.:EP1372191
Date:07.04.2004
[2004/15]
Search report(s)(Supplementary) European search report - dispatched on:EP24.02.2004
ClassificationIPC:H01L21/027, H01L21/308, G03F7/38
[2004/14]
CPC:
H01L21/7688 (EP,US); G03F7/168 (EP,US); G03F7/38 (EP,US);
H01L21/0272 (EP,US); H01L21/0274 (EP,US); H01L21/76838 (EP,US);
G03F7/095 (EP,US); H01L21/28587 (EP,US); H05K3/048 (EP,US);
Y10T428/24273 (EP,US); Y10T428/24331 (EP,US) (-)
Former IPC [2003/51]H01L21/768, H01L21/027
Designated contracting states(deleted) [2005/01]
Former [2003/51]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Verfahren zur Abscheidung einer Struktur auf einem Substrat[2003/51]
English:Method for depositing a device feature on a substrate[2003/51]
French:Technique de dépot d'une structure sur un substrat[2003/51]
Examination procedure08.10.2004Application deemed to be withdrawn, date of legal effect  [2005/29]
09.02.2005Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2005/29]
Fees paidPenalty fee
Penalty fee Rule 85a EPC 1973
16.11.2004DE   M01   Not yet paid
16.11.2004FR   M01   Not yet paid
16.11.2004GB   M01   Not yet paid
16.11.2004IT   M01   Not yet paid
Penalty fee Rule 85b EPC 1973
16.11.2004M01   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]JPH03235322  ;
 [X]JPS57199222  ;
 [X]JPH1197328  ;
 [A]JPH03119720  ;
 [X]US6372414  (REDD RANDY D [US], et al) [X] 1-9 * column 2, line 45 - column 3, line 12 * * column 4, lines 12-28 *;
 [X]  - REDD ET AL., "Lithographic Process for High-Resolution Metal Lift-Off", PROCEEDINGS OF THE SPIE CONFERENCE ON ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Santa Clara, California, (19990315), vol. 3678, pages 641 - 651, XP008027240 [X] 1-9 * abstract * * page 641 - page 643 * * figure 1 *

DOI:   http://dx.doi.org/10.1117/12.350188
 [X]  - REDD ET AL., "Revitalization of Single Layer Lift-off For Finer Resolution and Challenging Topography", GAAS MANTECH CONFERENCE - DIGEST OF PAPERS PROCEEDINGS OF 2001 INTERNATIONAL CONFERENCE ON COMPOUND SEMICONDUCTOR TECHNOLOGY, Las Vegas, (20010521), pages 99 - 101, XP001188108 [X] 1-9 * the whole document *
 [X]  - ANONYMOUS, "Single Layer Optical Lift Off Process. October 1975.", IBM TECHNICAL DISCLOSURE BULLETIN, New York, US, (19751001), vol. 18, no. 5, page 1395, XP002269032 [X] 1-4,7-9 * the whole document *
 [X]  - PATENT ABSTRACTS OF JAPAN, (19920114), vol. 016, no. 014, Database accession no. (E - 1154), & JP03235322 A 19911021 (NEC CORP) [X] 1-4,7-9 * abstract *
 [X]  - PATENT ABSTRACTS OF JAPAN, (19830225), vol. 007, no. 049, Database accession no. (E - 161), & JP57199222 A 19821207 (NIPPON DENSHIN DENWA KOSHA) [X] 1,2,4-9 * abstract *
 [X]  - PATENT ABSTRACTS OF JAPAN, (19990730), vol. 1999, no. 09, & JP11097328 A 19990409 (TOSHIBA CORP) [X] 1,2,4-9 * abstract *
 [A]  - ANONYMOUS, "Single Layer Lift-Off Process. September 1979.", IBM TECHNICAL DISCLOSURE BULLETIN, New York, US, (19790901), vol. 22, no. 4, page 1399, XP002269033 [A] 1-9 * the whole document *
 [A]  - PATENT ABSTRACTS OF JAPAN, (19910816), vol. 015, no. 323, Database accession no. (E - 1101), & JP03119720 A 19910522 (NIPPON TELEGR & TELEPH CORP) [A] 1-9 * abstract *
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.