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EP1484765
European procedure
Extract from the Register of European Patents
EP About this file: EP1484765
| EP1484765 - High density magnetoresistance memory and manufacturing method thereof [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 02.09.2011 Database last updated on 04.06.2024 | Most recent event Tooltip | 02.09.2011 | No opposition filed within time limit | published on 05.10.2011 [2011/40] | Applicant(s) | For all designated states Samsung Electronics Co., Ltd. 416 Maetan 3-dong Yeongtong-gu Suwon 442-742 Gyeonggi-do / KR | [N/P] |
| Former [2010/43] | For all designated states SAMSUNG ELECTRONICS CO., LTD. 416 Maetan 3-dong, Yeongtong-gu Suwon 442-742 Gyeonggi-do / KR | ||
| Former [2004/50] | For all designated states Samsung Electronics Co., Ltd. 416 Maetan 3-dong, Yeongtong-gu Suwon 442-742, Gyeonggi-do / KR | Inventor(s) | 01 /
Kim, Eun-sik 102-1102 Samsung Apt. Suyu 2-dong Gangbuk-gu Seoul / KR | 02 /
Kim, Yong-su 1-404 Siyoung Apt. Gaepo 4-dong Gangnam-gu Seoul / KR | [2004/50] | Representative(s) | Greene, Simon Kenneth Elkington and Fife LLP Prospect House 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | [N/P] |
| Former [2004/50] | Greene, Simon Kenneth Elkington and Fife LLP, Prospect House, 8 Pembroke Road Sevenoaks, Kent TN13 1XR / GB | Application number, filing date | 03257514.4 | 28.11.2003 | [2004/50] | Priority number, date | KR20030035302 | 02.06.2003 Original published format: KR 2003035302 | [2004/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP1484765 | Date: | 08.12.2004 | Language: | EN | [2004/50] | Type: | B1 Patent specification | No.: | EP1484765 | Date: | 27.10.2010 | Language: | EN | [2010/43] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.10.2004 | Classification | IPC: | G11C11/15, G11C11/16 | [2004/50] | CPC: |
G11C11/15 (EP,KR,US);
H10N50/10 (EP,US);
G11C11/16 (EP,US)
| Designated contracting states | DE, FR, GB [2005/35] |
| Former [2004/50] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, RO, SE, SI, SK, TR | Title | German: | Magnetoresistiver Speicher mit hoher Dichte und Herstellungsverfahren dafür | [2009/17] | English: | High density magnetoresistance memory and manufacturing method thereof | [2004/50] | French: | Mémoire magnétoresistive à haute densité et sa méthode de fabrication | [2004/50] |
| Former [2004/50] | Magnetoresitiver speicher mit hoher Dichte und Herstellungsverfahren dafür | Examination procedure | 22.12.2003 | Examination requested [2004/50] | 08.12.2006 | Despatch of a communication from the examining division (Time limit: M06) | 13.06.2007 | Reply to a communication from the examining division | 29.07.2009 | Despatch of a communication from the examining division (Time limit: M06) | 05.02.2010 | Reply to a communication from the examining division | 10.06.2010 | Communication of intention to grant the patent | 08.09.2010 | Fee for grant paid | 08.09.2010 | Fee for publishing/printing paid | Opposition(s) | 28.07.2011 | No opposition filed within time limit [2011/40] | Fees paid | Renewal fee | 14.11.2005 | Renewal fee patent year 03 | 14.11.2006 | Renewal fee patent year 04 | 15.11.2007 | Renewal fee patent year 05 | 31.03.2008 | Renewal fee patent year 06 | 12.11.2009 | Renewal fee patent year 07 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]EP1246191 (TOSHIBA KK [JP]) [X] 1,3-5,7,9-11 * column 21, paragraph 111 - column 23, paragraph 121 *[A] 6,12 | Examination | US5659499 | by applicant | US5656499 | US5659490 | US6174737 | EP1246191 |