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Extract from the Register of European Patents

EP About this file: EP1532670

EP1532670 - CHARACTERIZATION ADN REDUCTION OF VARIATION FOR INTEGRATED CIRCUITS [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  02.05.2014
Database last updated on 03.10.2024
Most recent event   Tooltip02.05.2014Application deemed to be withdrawnpublished on 04.06.2014  [2014/23]
Applicant(s)For all designated states
Cadence Design Systems, Inc.
2655 Seely Avenue
San Jose, CA 95134 / US
[2007/52]
Former [2005/21]For all designated states
Praesagus, Inc.
One Broadway, Suite 600
Cambridge, MA 02142 / US
Inventor(s)01 / SMITH, Taber, H.
1706, Cherry Hills Lane
San Jose, CA 05125 / US
02 / WHITE, David
3656 Gavota Avenue
San Jose, CA 95124 / US
03 / Mehrotra, Vikas
2000 Walnut Avenue, Apt. Q106
Fremont, CA 94358 / US
 [2006/24]
Former [2005/21]01 / SMITH, Taber, H.
1945 Barrymore Cmn, J
Fremont, CA 94358 / US
02 / WHITE, David
13 James Way
Cambridge, MA 02141 / US
03 / Mehrotra, Vikas
2000 Walnut Avenue, Apt. Q106
Fremont, CA 94358 / US
Representative(s)Molnia, David
Df-mp Dörries Frank-Molnia & Pohlman
Patentanwälte Rechtsanwälte PartG mbB
Theatinerstrasse 16
80333 München / DE
[N/P]
Former [2005/21]Molnia, David
Dörries Frank-Molnia Pohlman, Triftstrasse 13
80538 München / DE
Application number, filing date03741876.104.06.2003
[2005/21]
WO2003US17655
Priority number, dateUS2002016521407.06.2002         Original published format: US 165214
US2002016484407.06.2002         Original published format: US 164844
US2002016484707.06.2002         Original published format: US 164847
US2002016484207.06.2002         Original published format: US 164842
US2002020066022.07.2002         Original published format: US 200660
US2002032128317.12.2002         Original published format: US 321283
US2002032129817.12.2002         Original published format: US 321298
US2002032128117.12.2002         Original published format: US 321281
US2002032177717.12.2002         Original published format: US 321777
US2002032129017.12.2002         Original published format: US 321290
[2005/21]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO03104921
Date:18.12.2003
Language:EN
[2003/51]
Type: A2 Application without search report 
No.:EP1532670
Date:25.05.2005
Language:EN
The application published by WIPO in one of the EPO official languages on 18.12.2003 takes the place of the publication of the European patent application.
[2005/21]
Search report(s)International search report - published on:US03.03.2005
(Supplementary) European search report - dispatched on:EP14.08.2007
ClassificationIPC:H01L21/302, G06F17/50
[2007/22]
CPC:
G06F30/39 (EP,US)
Former IPC [2005/21]H01L21/302
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   RO,   SE,   SI,   SK,   TR [2005/21]
Extension statesALNot yet paid
LTNot yet paid
LVNot yet paid
MKNot yet paid
TitleGerman:CHARAKTERISIERUNG UND REDUKTION DER VARIATION F R INTEGRIERTE SCHALTUNGEN[2005/21]
English:CHARACTERIZATION ADN REDUCTION OF VARIATION FOR INTEGRATED CIRCUITS[2005/21]
French:CARACTERISATION ET REDUCTION DE VARIATION POUR CIRCUITS INTEGRES[2005/21]
Entry into regional phase04.01.2005National basic fee paid 
04.01.2005Search fee paid 
05.01.2005Designation fee(s) paid 
04.01.2005Examination fee paid 
Examination procedure04.01.2005Examination requested  [2005/21]
18.02.2005Amendment by applicant (claims and/or description)
07.05.2009Despatch of a communication from the examining division (Time limit: M04)
07.09.2009Reply to a communication from the examining division
19.05.2011Despatch of a communication from the examining division (Time limit: M04)
27.09.2011Reply to a communication from the examining division
27.07.2012Despatch of a communication from the examining division (Time limit: M06)
06.02.2013Reply to a communication from the examining division
03.01.2014Application deemed to be withdrawn, date of legal effect  [2014/23]
29.01.2014Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2014/23]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  07.05.2009
Fees paidRenewal fee
21.06.2005Renewal fee patent year 03
27.06.2006Renewal fee patent year 04
08.06.2007Renewal fee patent year 05
18.03.2008Renewal fee patent year 06
26.06.2009Renewal fee patent year 07
25.06.2010Renewal fee patent year 08
27.06.2011Renewal fee patent year 09
26.06.2012Renewal fee patent year 10
Penalty fee
Additional fee for renewal fee
30.06.201311   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[A]US5923563  (LAVIN MARK A [US], et al) [A] 1-4 * column 2, line 45 - line 67 *;
 [A]  - RUIQI TIAN ET AL, "Model-Based Dummy Feature Placement for Oxide Chemical-Mechanical Polishing Manufacturability", IEEE TRANSACTIONS ON COMPUTER AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, (200107), vol. 20, no. 7, ISSN 0278-0070, XP011008010 [A] 1-14 * page 903, column 1, line 5 - line 11 * * paragraphs [0002] - [003A] * * figures 1,3 *
 [A]  - YU CHEN ET AL, "Hierarchical dummy fill for process uniformity", DESIGN AUTOMATION CONFERENCE, 2001. PROCEEDINGS OF THE ASP-DAC 2001. ASIA AND SOUTH PACIFIC JAN. 30 - FEB. 2, 2001, PISCATAWAY, NJ, USA,IEEE, (20010130), ISBN 0-7803-6633-6, pages 139 - 144, XP010537793 [A] 1-14 * the whole document *
 [A]  - BONING D ET AL, "Pattern dependent modeling for CMP optimization and control", MATER RES SOC SYMP PROC; MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS 2000 MATERIALS RESEARCH SOCIETY, WARRENDALE, PA, USA, (19990405), vol. 566, pages 197 - 209, XP007901983 [A] 1-14 * the whole document *
 [A]  - STINE B E ET AL, "THE PHYSICAL AND ELECTRICAL EFFECTS OF METAL-FILL PATTERNING PROCTICES FOR OXIDE CHEMICAL-MECHANICAL POLISHING PROCESSES", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (199803), vol. 45, no. 3, ISSN 0018-9383, pages 665 - 679, XP000738545 [A] 1-14 * the whole document *

DOI:   http://dx.doi.org/10.1109/16.661228
 [PX]  - OHTA T ET AL, "A new SP(simultaneous polishing) model for copper CMP process", SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002. SISPAD 2002. INTERNATIONAL CONFERENCRE ON SEPT. 4-6, 2002, PISCATAWAY, NJ, USA,IEEE, (20020904), ISBN 4-89114-027-5, pages 257 - 260, XP010603838 [PX] 1,2,4-6 * the whole document *
International search[AE]US6751785  (OH SOO-YOUNG [US]);
 [A]US6486066  (CLEEVES JAMES M [US], et al)
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.