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EP About this file: EP1592048

EP1592048 - PRODUCTION METHODS FOR A SEMICONDUCTOR SUSBTRATE [Right-click to bookmark this link]
Former [2005/44]	SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, AND THEIR PRODUCTION METHODS
	[2016/21]
Status	No opposition filed within time limit Status updated on 22.09.2017 Database last updated on 03.09.2024
Most recent event Tooltip	22.09.2017	No opposition filed within time limit	published on 25.10.2017 [2017/43]
Applicant(s)	For all designated states SUMCO CORPORATION 2-1, Shibaura 1-chome Minato-ku Tokyo / JP
	[2006/31]
Former [2005/44]	For all designated states Sumitomo Mitsubishi Silicon Corporation 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
Inventor(s)	01 / SHIONO, Ichiro, @Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 / JP
	02 / NINOMIYA, Masaharu@Sumitomo Mitsubishi SiliconCorp. 2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 / JP
	03 / KOUGAMI, Hazumu, @Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 / JP
	[2016/46]
Former [2006/06]	01 / SHIONO, Ichiro, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
	02 / NINOMIYA, Masaharu Sumitomo Mitsubishi SiliconCorp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
	03 / KOUGAMI, Hazumu, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
Former [2005/44]	01 / SHIONO, Ichiro, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
	02 / NINOMIYA, M., Sumitomo Mitsubishi SiliconCorp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
	03 / KOUGAMI, Hazumu, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP
Representative(s)	Banzer, Hans-Jörg Kraus & Weisert Patentanwälte PartGmbB Thomas-Wimmer-Ring 15 80539 München / DE
	[2016/46]
Former [2008/44]	Banzer, Hans-Jörg Kraus & Weisert Patent- und Rechtsanwälte Thomas-Wimmer-Ring 15 80539 München / DE
Former [2005/44]	Banzer, Hans-Jörg Kraus & Weisert, Thomas-Wimmer-Ring 15 80539 München / DE
Application number, filing date	03815734.3	06.02.2003
	[2005/44]
	WO2003JP01242
Priority number, date	JP20030027596	04.02.2003 Original published format: JP 2003027596
	[2005/44]
Filing language	JA
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2004070800
	Date:	19.08.2004
	Language:	EN
	[2004/34]
	Type:	A1 Application with search report
	No.:	EP1592048
	Date:	02.11.2005
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 19.08.2004 takes the place of the publication of the European patent application.
	[2005/44]
	Type:	B1 Patent specification
	No.:	EP1592048
	Date:	16.11.2016
	Language:	EN
	[2016/46]
Search report(s)	International search report - published on:	JP	19.08.2004
	(Supplementary) European search report - dispatched on:	EP	31.01.2011
Classification	IPC:	H01L21/20, H01L29/161, H01L29/78, H01L21/336, H01L21/205, H01L21/02, H01L29/10, H01L29/165	[2016/21]
	CPC:	H01L29/165 (EP,KR,US); H01L21/0251 (EP,KR,US); H01L21/02381 (EP,KR,US); H01L21/0245 (EP,KR,US); H01L21/02502 (EP,KR,US); H01L21/02505 (EP,KR,US); (+) H01L21/02532 (EP,KR,US); H01L21/0262 (EP,KR,US); H01L29/1054 (EP,KR,US) (-)
	Former IPC [2011/09]	H01L21/20, H01L29/161, H01L29/78, H01L21/336, H01L21/205, H01L21/02
	Former IPC [2005/44]	H01L21/20, H01L29/161, H01L29/78, H01L21/336, H01L21/205
Designated contracting states	DE, FR [2016/46]
Former [2006/21]	DE, FR
Former [2005/44]	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, SE, SI, SK, TR
Title	German:	HERSTELLUNGSVERFAHREN FÜR EIN HALBLEITERSUBSTRAT	[2016/21]
	English:	PRODUCTION METHODS FOR A SEMICONDUCTOR SUSBTRATE	[2016/21]
	French:	PROCEDES DE PRODUCTION D'UN SUBSTRAT A SEMI-CONDUCTEUR	[2016/21]
	Former [2005/44]	HALBLEITERSUBSTRAT, FELDEFFEKTTRANSISTOR UND DEREN HERSTELLUNGSVERFAHREN
	Former [2005/44]	SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, AND THEIR PRODUCTION METHODS
	Former [2005/44]	SUBSTRAT A SEMI-CONDUCTEURS, TRANSISTOR A EFFET DE CHAMP ET PROCEDES DE PRODUCTION DE CES DERNIERS
Entry into regional phase	03.08.2005	Translation filed
	03.08.2005	National basic fee paid
	03.08.2005	Search fee paid
	03.08.2005	Designation fee(s) paid
	03.08.2005	Examination fee paid
Examination procedure	03.08.2005	Examination requested [2005/44]
	11.07.2011	Despatch of a communication from the examining division (Time limit: M04)
	10.11.2011	Reply to a communication from the examining division
	30.11.2012	Despatch of a communication from the examining division (Time limit: M04)
	22.03.2013	Reply to a communication from the examining division
	10.04.2015	Despatch of a communication from the examining division (Time limit: M04)
	07.08.2015	Reply to a communication from the examining division
	19.10.2015	Despatch of a communication from the examining division (Time limit: M04)
	18.02.2016	Reply to a communication from the examining division
	02.06.2016	Communication of intention to grant the patent
	29.09.2016	Fee for grant paid
	29.09.2016	Fee for publishing/printing paid
	29.09.2016	Receipt of the translation of the claim(s)
Divisional application(s)	EP13165728.0 / EP2631933
	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 11.07.2011
Opposition(s)	17.08.2017	No opposition filed within time limit [2017/43]
Fees paid	Renewal fee
	03.08.2005	Renewal fee patent year 03
	14.02.2006	Renewal fee patent year 04
	14.02.2007	Renewal fee patent year 05
	13.02.2008	Renewal fee patent year 06
	13.02.2009	Renewal fee patent year 07
	10.02.2010	Renewal fee patent year 08
	10.02.2011	Renewal fee patent year 09
	10.02.2012	Renewal fee patent year 10
	11.02.2013	Renewal fee patent year 11
	06.02.2014	Renewal fee patent year 12
	10.02.2015	Renewal fee patent year 13
	22.12.2015	Renewal fee patent year 14
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]EP0889502 (IBM [US]) [A] 1,2,5,10,11,14,19,20 * column 6, line 34 - column 7, line 46 ** figures 3, 4 *;
		[A]US6117750 (BENSAHEL DANIEL [FR], et al) [A] 1,4,10,13 * column 2, line 30 - column 4, line 43 *;
		[XA]US6388307 (KONDO MASAO [JP], et al) [X] 10,12 * column 5, line 51 - column 7, line 39 * * figures 1, 3, 6-8 * [A] 11,13,14,20;
		[XI]JP2002241195 (MITSUBISHI MATERIAL SILICON, et al) [X] 10-14,20 * paragraph [0003] * * paragraph [0023] * * paragraph [0026] - paragraph [0027] * * paragraph [0031] * * figures 3-5 * [I] 1-5,19;
		[A] - SCHAEFFLER F, "REVIEW ARTICLE. HIGH-MOBILITY SI AND GE STRUCTURES", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP, BRISTOL, GB, (19971201), vol. 12, no. 12, ISSN 0268-1242, pages 1515 - 1549, XP000724834 [A] 1-5,10-14,19,20 * pages 1522 -1525; chapters 2.2.2 and 2.2.3 * * figure 8 * DOI: http://dx.doi.org/10.1088/0268-1242/12/12/001
	International search	[A]EP0541971 (IBM [US]);
		[Y]JPH06177046 (FUJITSU LTD);
		[Y]US5500389 (LEE SEUNG-CHANG [KR], et al);
		[Y]WO9859365 (MASSACHUSETTS INST TECHNOLOGY [US]);
		[Y]US2002017642 (MIZUSHIMA KAZUKI [JP], et al);
		[Y]JP2002217413 (UNIV NAGOYA);
		[Y]JP2002289533 (SAWANO KENTARO, et al);
		[Y]JP2002359188 (MITSUBISHI MATERIAL SILICON, et al);
		[X]JP2003022970 (MITSUBISHI MATERIAL SILICON, et al);
		[XE]WO03015140 (SUMITOMO MITSUBISHI SILICON [JP], et al)

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

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