EP1592048 - PRODUCTION METHODS FOR A SEMICONDUCTOR SUSBTRATE [Right-click to bookmark this link] | |||
Former [2005/44] | SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, AND THEIR PRODUCTION METHODS | ||
[2016/21] | Status | No opposition filed within time limit Status updated on 22.09.2017 Database last updated on 03.09.2024 | Most recent event Tooltip | 22.09.2017 | No opposition filed within time limit | published on 25.10.2017 [2017/43] | Applicant(s) | For all designated states SUMCO CORPORATION 2-1, Shibaura 1-chome Minato-ku Tokyo / JP | [2006/31] |
Former [2005/44] | For all designated states Sumitomo Mitsubishi Silicon Corporation 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | Inventor(s) | 01 /
SHIONO, Ichiro, @Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 / JP | 02 /
NINOMIYA, Masaharu@Sumitomo Mitsubishi SiliconCorp. 2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 / JP | 03 /
KOUGAMI, Hazumu, @Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome Minato-ku Tokyo 105-8634 / JP | [2016/46] |
Former [2006/06] | 01 /
SHIONO, Ichiro, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | ||
02 /
NINOMIYA, Masaharu Sumitomo Mitsubishi SiliconCorp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | |||
03 /
KOUGAMI, Hazumu, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | |||
Former [2005/44] | 01 /
SHIONO, Ichiro, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | ||
02 /
NINOMIYA, M., Sumitomo Mitsubishi SiliconCorp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | |||
03 /
KOUGAMI, Hazumu, Sumitomo Mitsubishi Silicon Corp. 2-1, Shibaura 1-chome, Minato-ku Tokyo 105-8634 / JP | Representative(s) | Banzer, Hans-Jörg Kraus & Weisert Patentanwälte PartGmbB Thomas-Wimmer-Ring 15 80539 München / DE | [2016/46] |
Former [2008/44] | Banzer, Hans-Jörg Kraus & Weisert Patent- und Rechtsanwälte Thomas-Wimmer-Ring 15 80539 München / DE | ||
Former [2005/44] | Banzer, Hans-Jörg Kraus & Weisert, Thomas-Wimmer-Ring 15 80539 München / DE | Application number, filing date | 03815734.3 | 06.02.2003 | [2005/44] | WO2003JP01242 | Priority number, date | JP20030027596 | 04.02.2003 Original published format: JP 2003027596 | [2005/44] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2004070800 | Date: | 19.08.2004 | Language: | EN | [2004/34] | Type: | A1 Application with search report | No.: | EP1592048 | Date: | 02.11.2005 | Language: | EN | The application published by WIPO in one of the EPO official languages on 19.08.2004 takes the place of the publication of the European patent application. | [2005/44] | Type: | B1 Patent specification | No.: | EP1592048 | Date: | 16.11.2016 | Language: | EN | [2016/46] | Search report(s) | International search report - published on: | JP | 19.08.2004 | (Supplementary) European search report - dispatched on: | EP | 31.01.2011 | Classification | IPC: | H01L21/20, H01L29/161, H01L29/78, H01L21/336, H01L21/205, H01L21/02, H01L29/10, H01L29/165 | [2016/21] | CPC: |
H01L29/165 (EP,KR,US);
H01L21/0251 (EP,KR,US);
H01L21/02381 (EP,KR,US);
H01L21/0245 (EP,KR,US);
H01L21/02502 (EP,KR,US);
H01L21/02505 (EP,KR,US);
|
Former IPC [2011/09] | H01L21/20, H01L29/161, H01L29/78, H01L21/336, H01L21/205, H01L21/02 | ||
Former IPC [2005/44] | H01L21/20, H01L29/161, H01L29/78, H01L21/336, H01L21/205 | Designated contracting states | DE, FR [2016/46] |
Former [2006/21] | DE, FR | ||
Former [2005/44] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PT, SE, SI, SK, TR | Title | German: | HERSTELLUNGSVERFAHREN FÜR EIN HALBLEITERSUBSTRAT | [2016/21] | English: | PRODUCTION METHODS FOR A SEMICONDUCTOR SUSBTRATE | [2016/21] | French: | PROCEDES DE PRODUCTION D'UN SUBSTRAT A SEMI-CONDUCTEUR | [2016/21] |
Former [2005/44] | HALBLEITERSUBSTRAT, FELDEFFEKTTRANSISTOR UND DEREN HERSTELLUNGSVERFAHREN | ||
Former [2005/44] | SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, AND THEIR PRODUCTION METHODS | ||
Former [2005/44] | SUBSTRAT A SEMI-CONDUCTEURS, TRANSISTOR A EFFET DE CHAMP ET PROCEDES DE PRODUCTION DE CES DERNIERS | Entry into regional phase | 03.08.2005 | Translation filed | 03.08.2005 | National basic fee paid | 03.08.2005 | Search fee paid | 03.08.2005 | Designation fee(s) paid | 03.08.2005 | Examination fee paid | Examination procedure | 03.08.2005 | Examination requested [2005/44] | 11.07.2011 | Despatch of a communication from the examining division (Time limit: M04) | 10.11.2011 | Reply to a communication from the examining division | 30.11.2012 | Despatch of a communication from the examining division (Time limit: M04) | 22.03.2013 | Reply to a communication from the examining division | 10.04.2015 | Despatch of a communication from the examining division (Time limit: M04) | 07.08.2015 | Reply to a communication from the examining division | 19.10.2015 | Despatch of a communication from the examining division (Time limit: M04) | 18.02.2016 | Reply to a communication from the examining division | 02.06.2016 | Communication of intention to grant the patent | 29.09.2016 | Fee for grant paid | 29.09.2016 | Fee for publishing/printing paid | 29.09.2016 | Receipt of the translation of the claim(s) | Divisional application(s) | EP13165728.0 / EP2631933 | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 11.07.2011 | Opposition(s) | 17.08.2017 | No opposition filed within time limit [2017/43] | Fees paid | Renewal fee | 03.08.2005 | Renewal fee patent year 03 | 14.02.2006 | Renewal fee patent year 04 | 14.02.2007 | Renewal fee patent year 05 | 13.02.2008 | Renewal fee patent year 06 | 13.02.2009 | Renewal fee patent year 07 | 10.02.2010 | Renewal fee patent year 08 | 10.02.2011 | Renewal fee patent year 09 | 10.02.2012 | Renewal fee patent year 10 | 11.02.2013 | Renewal fee patent year 11 | 06.02.2014 | Renewal fee patent year 12 | 10.02.2015 | Renewal fee patent year 13 | 22.12.2015 | Renewal fee patent year 14 |
Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]EP0889502 (IBM [US]) [A] 1,2,5,10,11,14,19,20 * column 6, line 34 - column 7, line 46 ** figures 3, 4 *; | [A]US6117750 (BENSAHEL DANIEL [FR], et al) [A] 1,4,10,13 * column 2, line 30 - column 4, line 43 *; | [XA]US6388307 (KONDO MASAO [JP], et al) [X] 10,12 * column 5, line 51 - column 7, line 39 * * figures 1, 3, 6-8 * [A] 11,13,14,20; | [XI]JP2002241195 (MITSUBISHI MATERIAL SILICON, et al) [X] 10-14,20 * paragraph [0003] * * paragraph [0023] * * paragraph [0026] - paragraph [0027] * * paragraph [0031] * * figures 3-5 * [I] 1-5,19; | [A] - SCHAEFFLER F, "REVIEW ARTICLE. HIGH-MOBILITY SI AND GE STRUCTURES", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP, BRISTOL, GB, (19971201), vol. 12, no. 12, ISSN 0268-1242, pages 1515 - 1549, XP000724834 [A] 1-5,10-14,19,20 * pages 1522 -1525; chapters 2.2.2 and 2.2.3 * * figure 8 * DOI: http://dx.doi.org/10.1088/0268-1242/12/12/001 | International search | [A]EP0541971 (IBM [US]); | [Y]JPH06177046 (FUJITSU LTD); | [Y]US5500389 (LEE SEUNG-CHANG [KR], et al); | [Y]WO9859365 (MASSACHUSETTS INST TECHNOLOGY [US]); | [Y]US2002017642 (MIZUSHIMA KAZUKI [JP], et al); | [Y]JP2002217413 (UNIV NAGOYA); | [Y]JP2002289533 (SAWANO KENTARO, et al); | [Y]JP2002359188 (MITSUBISHI MATERIAL SILICON, et al); | [X]JP2003022970 (MITSUBISHI MATERIAL SILICON, et al); | [XE]WO03015140 (SUMITOMO MITSUBISHI SILICON [JP], et al) |