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Extract from the Register of European Patents

EP About this file: EP1496584

EP1496584 - Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  08.02.2013
Database last updated on 26.06.2024
Most recent event   Tooltip18.07.2014Lapse of the patent in a contracting state
New state(s): HU		published on 20.08.2014  [2014/34]
Applicant(s)For all designated states
Nichia Corporation
491-100, Oka
Kaminaka-cho
Anan-shi Tokushima 774-8601 / JP
[N/P]
Former [2012/14]For all designated states
Nichia Corporation
491-100, Oka, Kaminaka-cho
Anan-shi, Tokushima 774-8601 / JP
Former [2005/02]For all designated states
Nichia Corporation
491-100, Oka, Kaminaka-cho
Anan-shi, Tokushima 774-8601 / JP
Inventor(s)01 / Kozaki, Tokuya
c/o Nichia Coporation
491-100, Oka, Kaminaka-cho
Anan-shi
Tokushima 774-8601 / JP
02 / Sakamoto, Keiji
c/o Nichia Coporation
491-100, Oka, Kaminaka-cho
Anan-shi
Tokushima 774-8601 / JP
03 / Matsumura, Hiroaki
c/o Nichia Coporation
491-100, Oka, Kaminaka-cho
Anan-shi
Tokushima 774-8601 / JP
 [2012/13]
Former [2011/44]01 / Kozaki, Tokuya, c/o Nichia Coporation
491-100, Oka, Kaminaka-cho, Anan-shi
Tokushima 774-8601 / JP
02 / Sakamoto, Keiji, c/o Nichia Corporation
491-100, Oka, Kaminaka-cho, Anan-shi
Tokushima 774-8601 / JP
03 / Matsumura, Hiroaki, c/o Nichia Corporation
491-100, Oka, Kaminaka-cho, Anan-shi
Tokushima 774-8601 / JP
Former [2005/02]01 / Kozaki, Tokuya, c/o Nichia Coporation
491-100, Oka, Kaminaka.cho, Anan-shi
Tokushima 774-8601 / JP
02 / Sakamoto, Keiji, c/o Nichia Corporation
491-100, Oka, Kaminaka-cho, Anan-shi
Tokushima 774-8601 / JP
03 / Matsumura, Hiroaki, c/o Nichia Corporation
491-100, Oka, Kaminaka-cho, Anan-shi
Tokushima 774-8601 / JP
Representative(s)Vossius & Partner Patentanwälte Rechtsanwälte mbB
Siebertstrasse 3
81675 München / DE
[N/P]
Former [2012/14]Vossius & Partner
Siebertstrasse 4
81675 München / DE
Former [2008/35]Vossius & Partner
Siebertstrasse 3
81675 München / DE
Former [2005/02]VOSSIUS & PARTNER
Siebertstrasse 4
81675 München / DE
Application number, filing date04016260.409.07.2004
[2005/02]
Priority number, dateJP2003027319511.07.2003         Original published format: JP 2003273195
JP2003037155731.10.2003         Original published format: JP 2003371557
[2005/02]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1496584
Date:12.01.2005
Language:EN
[2005/02]
Type: A3 Search report 
No.:EP1496584
Date:27.07.2005
[2005/30]
Type: B1 Patent specification 
No.:EP1496584
Date:04.04.2012
Language:EN
[2012/14]
Search report(s)(Supplementary) European search report - dispatched on:EP10.06.2005
ClassificationIPC:H01S5/343, H01S5/22, H01S5/02
[2005/30]
CPC:
B82Y20/00 (EP,US); H01S5/30 (KR); H01S5/0201 (EP,US);
H01S5/320225 (EP,US); H01S5/32341 (EP,US); H01S5/34333 (EP,US);
H01S2304/12 (EP,US); H01S5/0202 (EP,US); H01S5/04254 (EP,US);
H01S5/2214 (EP,US) (-)
Former IPC [2005/02]H01S5/343, H01S5/22
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2005/02]
TitleGerman:Nitridhalbleiterlaser und seine Herstellungsmethode[2011/42]
English:Nitride semiconductor laser device and method of manufacturing the nitride semiconductor laser device[2005/02]
French:Laser semiconducteur en nitride et methode de sa fabrication[2011/42]
Former [2005/02]Nitridhalbleiterlaser und Herstellungmethode
Former [2005/02]Laser semiconducteur en nitride et methode de fabrication
Examination procedure13.01.2006Examination requested  [2006/11]
28.02.2006Despatch of a communication from the examining division (Time limit: M06)
08.09.2006Reply to a communication from the examining division
25.07.2007Despatch of a communication from the examining division (Time limit: M06)
22.01.2008Reply to a communication from the examining division
07.05.2009Despatch of a communication from the examining division (Time limit: M04)
11.09.2009Reply to a communication from the examining division
27.09.2010Despatch of a communication from the examining division (Time limit: M04)
03.02.2011Reply to a communication from the examining division
07.10.2011Communication of intention to grant the patent
16.02.2012Fee for grant paid
16.02.2012Fee for publishing/printing paid
Divisional application(s)EP10180459.9  / EP2287982
The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  28.02.2006
Opposition(s)07.01.2013No opposition filed within time limit [2013/11]
Fees paidRenewal fee
28.07.2006Renewal fee patent year 03
31.07.2007Renewal fee patent year 04
25.02.2008Renewal fee patent year 05
27.07.2009Renewal fee patent year 06
26.07.2010Renewal fee patent year 07
22.07.2011Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU09.07.2004
AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
TR04.04.2012
BG04.07.2012
GR05.07.2012
IE09.07.2012
LU09.07.2012
ES15.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
[2014/34]
Former [2014/27]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
TR04.04.2012
BG04.07.2012
GR05.07.2012
IE09.07.2012
LU09.07.2012
ES15.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
Former [2014/21]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
TR04.04.2012
BG04.07.2012
GR05.07.2012
IE09.07.2012
ES15.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
Former [2013/34]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
BG04.07.2012
GR05.07.2012
IE09.07.2012
ES15.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
Former [2013/33]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
GR05.07.2012
IE09.07.2012
ES15.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
Former [2013/22]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
GR05.07.2012
ES15.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
Former [2013/20]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
GR05.07.2012
CH31.07.2012
LI31.07.2012
MC31.07.2012
PT06.08.2012
Former [2013/11]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
GR05.07.2012
MC31.07.2012
PT06.08.2012
Former [2013/10]AT04.04.2012
BE04.04.2012
CY04.04.2012
CZ04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
RO04.04.2012
SE04.04.2012
SI04.04.2012
SK04.04.2012
GR05.07.2012
PT06.08.2012
Former [2013/09]AT04.04.2012
BE04.04.2012
CY04.04.2012
DK04.04.2012
EE04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
GR05.07.2012
PT06.08.2012
Former [2013/08]AT04.04.2012
BE04.04.2012
CY04.04.2012
DK04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
GR05.07.2012
PT06.08.2012
Former [2013/07]AT04.04.2012
BE04.04.2012
CY04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
GR05.07.2012
PT06.08.2012
Former [2013/04]BE04.04.2012
CY04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
GR05.07.2012
PT06.08.2012
Former [2013/01]CY04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
GR05.07.2012
PT06.08.2012
Former [2012/50]CY04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
GR05.07.2012
Former [2012/49]CY04.04.2012
FI04.04.2012
PL04.04.2012
SE04.04.2012
SI04.04.2012
Former [2012/48]FI04.04.2012
SE04.04.2012
Documents cited:Search[A]US6456638  (FUKUNAGA TOSHIAKI [JP]) [A] 1-10* abstract *;
 [X]US2003030053  (KAWAKAMI TOSHIYUKI [JP], et al) [X] 1-10 * paragraphs [0041] , [0100] - [0110] - [0119] , [0120]; figures 5-7 *;
 [A]  - "Dislocation density reduction via lateral epitaxy in selectively grown GaN structures", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19971027), vol. 71, no. 17, ISSN 0003-6951, page 2472, XP012018896 [A] 1-10 * abstract *

DOI:   http://dx.doi.org/10.1063/1.120091
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.