EP1557874 - Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 12.10.2007 Database last updated on 28.05.2024 | Most recent event Tooltip | 12.10.2007 | Application deemed to be withdrawn | published on 14.11.2007 [2007/46] | Applicant(s) | For all designated states Agilent Technologies, Inc. - a Delaware Corporation - 5301 Stevens Creek Boulevard Santa Clara CA 95051 / US | [N/P] |
Former [2007/04] | For all designated states Agilent Technologies, Inc. - a Delaware Corporation - 5301 Stevens Creek Boulevard Santa Clara, CA 95051 / US | ||
Former [2005/30] | For all designated states Agilent Technologies, Inc. 395 Page Mill Road Palo Alto, CA 94306 / US | Inventor(s) | 01 /
Mirkarimi, Laura Wills 2155 Kilkare Road Sunol California 94586 / US | [2005/30] | Representative(s) | Liesegang, Eva Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [N/P] |
Former [2005/30] | Liesegang, Eva Forrester & Boehmert, Pettenkoferstrasse 20-22 80336 München / DE | Application number, filing date | 04019988.7 | 23.08.2004 | [2005/30] | Priority number, date | US20040765647 | 26.01.2004 Original published format: US 765647 | [2005/30] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1557874 | Date: | 27.07.2005 | Language: | EN | [2005/30] | Type: | A3 Search report | No.: | EP1557874 | Date: | 15.03.2006 | [2006/11] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.01.2006 | Classification | IPC: | H01L21/3065, H01L21/306, H01L21/3213 | [2006/10] | CPC: |
H01L21/32136 (EP,US);
H01L21/30612 (EP,US);
H01L21/3065 (EP,US)
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Former IPC [2005/30] | H01L21/3065, H01L21/306 | Designated contracting states | DE, FR, GB [2006/47] |
Former [2005/30] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | Verfahren zum ätzen von Halbleiterstrukturen mit hohem Aspekt-Verhältnis in III-V Verbindungen für optoelektronische Bauelemente | [2005/30] | English: | Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices | [2005/30] | French: | Procédé de gravure d'éléments semi-conducteurs à haut facteur de forme dans des composés à base de III-V pour des dispositifs optoélectroniques | [2005/30] | Examination procedure | 25.04.2006 | Examination requested [2006/23] | 02.01.2007 | Despatch of a communication from the examining division (Time limit: M04) | 15.05.2007 | Application deemed to be withdrawn, date of legal effect [2007/46] | 19.06.2007 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2007/46] | Fees paid | Renewal fee | 29.08.2006 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 31.08.2007 | 04   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [EL]EP1528592 (AGILENT TECHNOLOGIES INC [US]) [EL] 1-12* column 3, paragraphs 8-11 *; | [X] - FLANDERS D. C., PRESSMAN L. D. ET AL., "Reactive ion etching of indium compounds using iodine containing plasmas", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, (199011), vol. 8, no. 6, pages 1990 - 1993, XP002362877 [X] 1-14 * table II * DOI: http://dx.doi.org/10.1116/1.584889 | [X] - LIU J. Q., ZYBURA M. F. ET AL., "Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system", CONFERENCE PROCEEDINGS OF 10TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, (19980511), pages 187 - 190, XP002362878 [X] 1-14 * page 187, column R, paragraph 3 * * page 188, column L, paragraph L * DOI: http://dx.doi.org/10.1109/ICIPRM.1998.712433 |