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Extract from the Register of European Patents

EP About this file: EP1557874

EP1557874 - Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  12.10.2007
Database last updated on 28.05.2024
Most recent event   Tooltip12.10.2007Application deemed to be withdrawnpublished on 14.11.2007  [2007/46]
Applicant(s)For all designated states
Agilent Technologies, Inc.
- a Delaware Corporation - 5301 Stevens Creek Boulevard
Santa Clara CA 95051 / US
[N/P]
Former [2007/04]For all designated states
Agilent Technologies, Inc.
- a Delaware Corporation - 5301 Stevens Creek Boulevard
Santa Clara, CA 95051 / US
Former [2005/30]For all designated states
Agilent Technologies, Inc.
395 Page Mill Road
Palo Alto, CA 94306 / US
Inventor(s)01 / Mirkarimi, Laura Wills
2155 Kilkare Road
Sunol California 94586 / US
 [2005/30]
Representative(s)Liesegang, Eva
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Pettenkoferstrasse 22
80336 München / DE
[N/P]
Former [2005/30]Liesegang, Eva
Forrester & Boehmert, Pettenkoferstrasse 20-22
80336 München / DE
Application number, filing date04019988.723.08.2004
[2005/30]
Priority number, dateUS2004076564726.01.2004         Original published format: US 765647
[2005/30]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1557874
Date:27.07.2005
Language:EN
[2005/30]
Type: A3 Search report 
No.:EP1557874
Date:15.03.2006
[2006/11]
Search report(s)(Supplementary) European search report - dispatched on:EP30.01.2006
ClassificationIPC:H01L21/3065, H01L21/306, H01L21/3213
[2006/10]
CPC:
H01L21/32136 (EP,US); H01L21/30612 (EP,US); H01L21/3065 (EP,US)
Former IPC [2005/30]H01L21/3065, H01L21/306
Designated contracting statesDE,   FR,   GB [2006/47]
Former [2005/30]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Verfahren zum ätzen von Halbleiterstrukturen mit hohem Aspekt-Verhältnis in III-V Verbindungen für optoelektronische Bauelemente[2005/30]
English:Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices[2005/30]
French:Procédé de gravure d'éléments semi-conducteurs à haut facteur de forme dans des composés à base de III-V pour des dispositifs optoélectroniques[2005/30]
Examination procedure25.04.2006Examination requested  [2006/23]
02.01.2007Despatch of a communication from the examining division (Time limit: M04)
15.05.2007Application deemed to be withdrawn, date of legal effect  [2007/46]
19.06.2007Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2007/46]
Fees paidRenewal fee
29.08.2006Renewal fee patent year 03
Penalty fee
Additional fee for renewal fee
31.08.200704   M06   Not yet paid
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Documents cited:Search[EL]EP1528592  (AGILENT TECHNOLOGIES INC [US]) [EL] 1-12* column 3, paragraphs 8-11 *;
 [X]  - FLANDERS D. C., PRESSMAN L. D. ET AL., "Reactive ion etching of indium compounds using iodine containing plasmas", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, (199011), vol. 8, no. 6, pages 1990 - 1993, XP002362877 [X] 1-14 * table II *

DOI:   http://dx.doi.org/10.1116/1.584889
 [X]  - LIU J. Q., ZYBURA M. F. ET AL., "Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system", CONFERENCE PROCEEDINGS OF 10TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, (19980511), pages 187 - 190, XP002362878 [X] 1-14 * page 187, column R, paragraph 3 * * page 188, column L, paragraph L *

DOI:   http://dx.doi.org/10.1109/ICIPRM.1998.712433
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.