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Extract from the Register of European Patents

EP About this file: EP1544918

EP1544918 - Semiconductor device with ESD element [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  01.05.2009
Database last updated on 03.09.2024
Most recent event   Tooltip22.05.2009Change - representativepublished on 24.06.2009  [2009/26]
Applicant(s)For all designated states
NEC Electronics Corporation
1753 Shimonumabe Nakahara-ku
Kawasaki, Kanagawa 211-8668 / JP
[N/P]
Former [2005/25]For all designated states
NEC Electronics Corporation
1753 Shimonumabe, Nakahara-ku
Kawasaki, Kanagawa 211-8668 / JP
Inventor(s)01 / Okushima, Mototsugu NEC Electronics Corporation
1753 Shimonumabe Nakahara-ku
Kawasaki Kanagawa 211-8668 / JP
 [2005/25]
Representative(s)Glawe, Delfs, Moll
Partnerschaft mbB von
Patent- und Rechtsanwälten
Postfach 26 01 62
80058 München / DE
[N/P]
Former [2009/26]Glawe, Delfs, Moll
Patent- und Rechtsanwälte Postfach 26 01 62
80058 München / DE
Former [2005/25]Glawe. Delfs. Moll
Patentanwälte Postfach 26 01 62
80058 München / DE
Application number, filing date04029737.615.12.2004
[2005/25]
Priority number, dateJP2003042210819.12.2003         Original published format: JP 2003422108
[2005/25]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1544918
Date:22.06.2005
Language:EN
[2005/25]
Type: A3 Search report 
No.:EP1544918
Date:01.04.2009
[2009/14]
Search report(s)(Supplementary) European search report - dispatched on:EP04.03.2009
ClassificationIPC:H01L27/02
[2005/25]
CPC:
H01L27/0288 (EP,US)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2005/25]
Extension statesALNot yet paid
BANot yet paid
HRNot yet paid
LVNot yet paid
MKNot yet paid
YUNot yet paid
TitleGerman:Halbleiterbauelement mit ESD Bauteil[2005/25]
English:Semiconductor device with ESD element[2005/25]
French:Dispositif semiconducteur avec élément ESD[2005/25]
Examination procedure24.04.2009Application withdrawn by applicant  [2009/23]
Fees paidRenewal fee
20.12.2006Renewal fee patent year 03
19.12.2007Renewal fee patent year 04
28.03.2008Renewal fee patent year 05
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Documents cited:Search[XA]JPS6245161  (HITACHI LTD) [X] 1,13,19-21 * abstract * * figures 1,4 * [A] 2-12,14-18;
 [XA]US6137664  (CASPER STEPHEN L [US], et al) [X] 1,3-7,10-13,15-18 * abstract * * column 2, line 27 - column 3, line 54 * * figures 1,2 * [A] 2,8,9,14,19-21;
 [XA]US2001033004  (LIN SHI-TRON [TW], et al) [X] 1-18 * abstract * * paragraph [0035] * * figures 2,3A,3B * [A] 19-21;
 [A]US2002033507  (MARIA VERHAEGE KOEN GERARD [BE], et al) [A] 1-21 * abstract ** paragraphs [0066] , [0067] , [0070] , [0073] , [0138] - [0141] - [0147] *;
 [XA]WO02059970  (INFINEON TECHNOLOGIES AG [DE], et al) [X] 1,3-7,10-13,15-18 * abstract * * page 12, line 29 - page 14, line 6 * * figure 4 * [A] 2,8,9,14,19-21
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.