blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP1517368

EP1517368 - Protection of a SiC surface via a GaN-layer [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  07.09.2012
Database last updated on 07.10.2024
Most recent event   Tooltip18.07.2014Lapse of the patent in a contracting state
New state(s): HU		published on 20.08.2014  [2014/34]
Applicant(s)For all designated states
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Bâtiment "Le Ponant D"
25, Rue Leblanc
75015 Paris / FR
[N/P]
Former [2011/44]For all designated states
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Bâtiment "Le Ponant D" 25, rue Leblanc
75015 Paris / FR
Former [2010/18]For all designated states
Commissariat à l'énergie atomique et aux énergies alternatives
Bâtiment D "Le Ponant" 25, rue Leblanc
75015 Paris / FR
Former [2006/44]For all designated states
COMMISSARIAT A L'ENERGIE ATOMIQUE
25, rue Leblanc Immeuble "Le Ponant D"
75015 Paris / FR
Former [2005/12]For all designated states
COMMISSARIAT A L'ENERGIE ATOMIQUE
29-33, rue de la Fédération BP 510
75752 Paris Cedex 15 / FR
Inventor(s)01 / DAUDIN, Bruno
37, chemin du Coteau
38700, LA TRONCHE / FR
02 / BRAULT, Julien
13, rue Saint Fulbert Bâtiment D
69008, LYON / FR
 [2011/44]
Former [2005/12]01 / DAUDIN, Bruno
37, chemin du Coteau
38700, LA TRONCHE / FR
02 / BRAULT, Julien
13, rue Saint Fulbert Bâtiment D
69008, LYON / FR
Representative(s)Poulin, Gérard, et al
BREVALEX
95, rue d'Amsterdam
75378 Paris Cedex 8 / FR
[N/P]
Former [2011/44]Poulin, Gérard, et al
BREVALEX
95 rue d'Amsterdam
75378 Paris Cedex 8 / FR
Former [2010/34]Poulin, Gérard, et al
BREVALEX 3, rue du Docteur Lancereaux
75008 Paris / FR
Former [2010/34]Poulin, Gérard, et al
BREVALEX 3, rue du Docteur Lancereaux
75008 Paris / FR
Former [2010/34]Poulin, Gérard, et al
Brevatome 3, rue du Docteur Lancereaux
75008 Paris / FR
Former [2005/12]Poulin, Gérard, et al
Société BREVATOME 3, rue du Docteur Lancereaux
75008 Paris / FR
Application number, filing date04104539.420.09.2004
[2005/12]
Priority number, dateFR2003005058522.09.2003         Original published format: FR 0350585
[2005/12]
Filing languageFR
Procedural languageFR
PublicationType: A2 Application without search report 
No.:EP1517368
Date:23.03.2005
Language:FR
[2005/12]
Type: A3 Search report 
No.:EP1517368
Date:25.01.2006
[2006/04]
Type: B1 Patent specification 
No.:EP1517368
Date:02.11.2011
Language:FR
[2011/44]
Search report(s)(Supplementary) European search report - dispatched on:EP13.12.2005
ClassificationIPC:H01L23/29, H01L21/20
[2005/12]
CPC:
H01L23/298 (EP,US); C30B29/36 (EP,US); C30B33/00 (EP,US);
H01L2924/0002 (EP,US)
C-Set:
H01L2924/0002, H01L2924/00 (EP,US)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IT,   LI,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2005/12]
TitleGerman:Schutz einer SiC-Oberfläche mittels einer GaN-Schicht[2005/12]
English:Protection of a SiC surface via a GaN-layer[2005/12]
French:Protection de la surface du SiC par une couche de GaN[2005/12]
Examination procedure24.07.2006Examination requested  [2006/36]
12.05.2011Communication of intention to grant the patent
31.08.2011Fee for grant paid
31.08.2011Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  12.05.2011
Opposition(s)03.08.2012No opposition filed within time limit [2012/41]
Fees paidRenewal fee
21.09.2006Renewal fee patent year 03
25.09.2007Renewal fee patent year 04
26.03.2008Renewal fee patent year 05
23.09.2009Renewal fee patent year 06
27.09.2010Renewal fee patent year 07
22.09.2011Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU20.09.2004
AT02.11.2011
CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
FI02.11.2011
IE02.11.2011
IT02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
TR02.11.2011
BG02.02.2012
GR03.02.2012
ES13.02.2012
PT02.03.2012
[2014/34]
Former [2014/21]AT02.11.2011
CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
FI02.11.2011
IE02.11.2011
IT02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
TR02.11.2011
BG02.02.2012
GR03.02.2012
ES13.02.2012
PT02.03.2012
Former [2013/29]AT02.11.2011
CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
FI02.11.2011
IE02.11.2011
IT02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
BG02.02.2012
GR03.02.2012
ES13.02.2012
PT02.03.2012
Former [2013/22]AT02.11.2011
CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
IE02.11.2011
IT02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
BG02.02.2012
GR03.02.2012
ES13.02.2012
PT02.03.2012
Former [2013/07]AT02.11.2011
CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
IE02.11.2011
IT02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
BG02.02.2012
GR03.02.2012
PT02.03.2012
Former [2012/37]CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
IE02.11.2011
IT02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
BG02.02.2012
GR03.02.2012
PT02.03.2012
Former [2012/36]CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
IE02.11.2011
NL02.11.2011
PL02.11.2011
RO02.11.2011
SE02.11.2011
SI02.11.2011
SK02.11.2011
BG02.02.2012
GR03.02.2012
PT02.03.2012
Former [2012/35]CY02.11.2011
CZ02.11.2011
DK02.11.2011
EE02.11.2011
IE02.11.2011
NL02.11.2011
PL02.11.2011
SE02.11.2011
SI02.11.2011
BG02.02.2012
GR03.02.2012
PT02.03.2012
Former [2012/34]CY02.11.2011
CZ02.11.2011
NL02.11.2011
PL02.11.2011
SE02.11.2011
SI02.11.2011
GR03.02.2012
PT02.03.2012
Former [2012/28]CY02.11.2011
NL02.11.2011
PL02.11.2011
SE02.11.2011
SI02.11.2011
GR03.02.2012
PT02.03.2012
Former [2012/26]NL02.11.2011
PL02.11.2011
SE02.11.2011
SI02.11.2011
GR03.02.2012
PT02.03.2012
Former [2012/24]NL02.11.2011
SE02.11.2011
SI02.11.2011
GR03.02.2012
PT02.03.2012
Former [2012/23]NL02.11.2011
GR03.02.2012
PT02.03.2012
Documents cited:Search[A]  - JOHNSON M A L ET AL, "MBE growth and properties of GaN on GaN/SiC substrates", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, (19970201), vol. 41, no. 2, ISSN 0038-1101, pages 213 - 218, XP004033811 [A] 1-5 * abstract *

DOI:   http://dx.doi.org/10.1016/S0038-1101(96)00169-4
 [DA]  - K.H. PLOOG, O. BRANDT, R. MURALIDHARAN, A. THAMM, P. WALTEREIT, "Growth of high quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, (200007), vol. 18, no. 4, pages 2290 - 2294, XP002284692 [DA] 1-5 * abstract * * page 2290, column R, line 8, paragraph 14 *

DOI:   http://dx.doi.org/10.1116/1.1305288
 [DA]  - L. X. ZHENG, M.H. XIE, S.Y. TONG, "Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces", PHYSICAL REVIEW B, (20010215), vol. 61, no. 7, pages 4890 - 4893, XP002284693 [DA] 1-5 * abstract *

DOI:   http://dx.doi.org/10.1103/PhysRevB.61.4890
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.