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Extract from the Register of European Patents

EP About this file: EP1437747

EP1437747 - Magnetoresistive random access memory with high selectivity [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  03.10.2008
Database last updated on 30.10.2024
Most recent event   Tooltip03.10.2008No opposition filed within time limitpublished on 05.11.2008  [2008/45]
Applicant(s)For all designated states
Samsung Electronics Co., Ltd.
416, Maetan-dong
Yeongtong-gu
Suwon-si
Gyeonggi-do 442-742 / KR
[N/P]
Former [2007/48]For all designated states
SAMSUNG ELECTRONICS CO., LTD.
416, Maetan-dong, Yeongtong-gu Suwon-si
Gyeonggi-do 442-742 / KR
Former [2004/29]For all designated states
Samsung Electronics Co., Ltd.
416, Maetan-dong, Yeongtong-gu
Suwon-si, Gyeonggi-do 442-742 / KR
Inventor(s)01 / Lee, Kyung-jin 824-805 Byeokjeokgol 8 danji Apt.
Yeongtong-dong Yeongtong-gu
Suwon-si Gyeonggi-do / KR
02 / Park, Wan-jun 19-408 Cheongsil Apt.
Daechi-dong Gangnam-gu
Seoul / KR
 [2004/29]
Representative(s)Greene, Simon Kenneth
Elkington and Fife LLP
Prospect House
8 Pembroke Road
Sevenoaks, Kent TN13 1XR / GB
[N/P]
Former [2004/29]Greene, Simon Kenneth
Elkington and Fife LLP, Prospect House, 8 Pembroke Road
Sevenoaks, Kent TN13 1XR / GB
Application number, filing date04250030.606.01.2004
[2004/29]
Priority number, dateKR2003000077807.01.2003         Original published format: KR 2003000778
[2004/29]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1437747
Date:14.07.2004
Language:EN
[2004/29]
Type: B1 Patent specification 
No.:EP1437747
Date:28.11.2007
Language:EN
[2007/48]
Search report(s)(Supplementary) European search report - dispatched on:EP27.04.2004
ClassificationIPC:H01F10/32, G11C11/16
[2004/29]
CPC:
B82Y25/00 (EP,US); G11C11/15 (KR); H01F10/324 (EP,US)
Designated contracting statesDE,   FR,   GB,   NL [2005/14]
Former [2004/29]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Magnetischer Direktzugriffspeicher mit hoher Selektivität[2004/29]
English:Magnetoresistive random access memory with high selectivity[2004/29]
French:Mémoire magnétique à accès aléatoire à haute sélectivité[2004/29]
Examination procedure28.01.2004Examination requested  [2004/29]
24.02.2006Despatch of a communication from the examining division (Time limit: M06)
24.08.2006Reply to a communication from the examining division
19.06.2007Cancellation of oral proceeding that was planned for 24.07.2007
19.06.2007Minutes of oral proceedings despatched
02.07.2007Communication of intention to grant the patent
24.07.2007Date of oral proceedings (cancelled)
17.10.2007Fee for grant paid
17.10.2007Fee for publishing/printing paid
Opposition(s)29.08.2008No opposition filed within time limit [2008/45]
Fees paidRenewal fee
12.01.2006Renewal fee patent year 03
12.01.2007Renewal fee patent year 04
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Documents cited:Search[A]US5757695  (SHI JING [US], et al);
 [X]US5959880  (SHI JING [US], et al);
 [A]US2002039668  (INOMATA AKIHIRO [JP], et al);
 [A]US2002117727  (ENGEL BRADLEY N [US], et al);
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.