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Extract from the Register of European Patents

EP About this file: EP1519417

EP1519417 - Magnetic random access memory comprising MTJ layer and method of manufacturing [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  08.04.2016
Database last updated on 24.08.2024
Most recent event   Tooltip08.04.2016No opposition filed within time limitpublished on 11.05.2016  [2016/19]
Applicant(s)For all designated states
Samsung Electronics Co., Ltd.
129, Samsung-ro
Yeongtong-gu
Suwon-si, Gyeonggi-do, 443-742 / KR
[2012/39]
Former [2005/13]For all designated states
Samsung Electronics Co., Ltd.
416 Maetan-dong, Yeongtong-gu
Suwon-si, Gyeonggi-do / KR
Inventor(s)01 / Kim, Tae-Wan
103-1102 Samjeong Apt
Jung-ri
Guseong-eub
Yongin-si Gyeonggi-do / KR
02 / Park, Sang-jin
101-1605 Geumho Apt
827 Seojeong-dong
Pyeongtaek-si Gyeonggi-do / KR
 [2015/23]
Former [2005/13]01 / Kim, Tae-Wan
103-1102 Samjeong Apt Jung-ri Guseong-eub
Yongin-si Gyeonggi-do / KR
02 / Park, Sang-jin
101-1605 Geumho Apt 827 Seojeong-dong
Pyeongtaek-si Gyeonggi-do / KR
Representative(s)Greene, Simon Kenneth
Elkington and Fife LLP
Prospect House
8 Pembroke Road
Sevenoaks, Kent TN13 1XR / GB
[2015/23]
Former [2005/13]Greene, Simon Kenneth
Elkington and Fife LLP, Prospect House, 8 Pembroke Road
Sevenoaks, Kent TN13 1XR / GB
Application number, filing date04255800.723.09.2004
[2005/13]
Priority number, dateKR2003006695226.09.2003         Original published format: KR 2003066952
[2005/13]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1519417
Date:30.03.2005
Language:EN
[2005/13]
Type: A3 Search report 
No.:EP1519417
Date:27.12.2006
[2006/52]
Type: B1 Patent specification 
No.:EP1519417
Date:03.06.2015
Language:EN
[2015/23]
Search report(s)(Supplementary) European search report - dispatched on:EP24.11.2006
ClassificationIPC:B82Y10/00, B82Y25/00, B82Y40/00, H01F10/06, G11C11/16, H01F41/30, H01L21/8246, H01L43/08, H01F10/32, H01L43/12, H01L27/22
[2015/03]
CPC:
G11C11/16 (EP,US); H10B69/00 (KR); B82Y10/00 (EP,US);
B82Y25/00 (EP,US); B82Y40/00 (EP,US); H01F10/06 (EP,US);
H01F10/3254 (EP,US); H01F41/308 (EP,US); H10B61/22 (EP,US);
H10N50/01 (EP,US); H10N50/10 (EP,US) (-)
Former IPC [2006/52]H01L27/22, H01L21/8246, H01L43/08, H01F10/32, H01F10/30, H01L43/12
Former IPC [2005/13]H01L27/22, H01L21/8246, H01L43/00
Designated contracting statesDE,   FR,   GB [2015/23]
Former [2007/36]DE,  FR,  GB 
Former [2005/13]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IT,  LI,  LU,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Magnetischer Direktzugriffsspeicher mit Magnettunnelelementschicht und Herstellungsverfahren[2005/13]
English:Magnetic random access memory comprising MTJ layer and method of manufacturing[2005/13]
French:Mémoire d'accès aléatoire magnétique avec une couche de jonction à effet tunnel magnétique et procédé de fabrication[2005/13]
Examination procedure28.03.2007Examination requested  [2007/19]
25.05.2007Despatch of a communication from the examining division (Time limit: M06)
04.12.2007Reply to a communication from the examining division
26.04.2013Despatch of a communication from the examining division (Time limit: M04)
06.09.2013Reply to a communication from the examining division
28.01.2015Communication of intention to grant the patent
24.04.2015Fee for grant paid
24.04.2015Fee for publishing/printing paid
24.04.2015Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  25.05.2007
Opposition(s)04.03.2016No opposition filed within time limit [2016/19]
Fees paidRenewal fee
11.09.2006Renewal fee patent year 03
12.09.2007Renewal fee patent year 04
31.03.2008Renewal fee patent year 05
11.09.2009Renewal fee patent year 06
14.09.2010Renewal fee patent year 07
29.09.2011Renewal fee patent year 08
12.09.2012Renewal fee patent year 09
23.09.2013Renewal fee patent year 10
24.09.2014Renewal fee patent year 11
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Documents cited:Search[Y]EP1094329  (MOTOROLA INC [US]);
 [Y]EP1182713  (MATSUSHITA ELECTRIC IND CO LTD [JP]);
 [Y]US2003021908  (NICKEL JANICE H [US], et al);
 [Y]US2003072109  (SHARMA MANISH [US], et al);
 [Y]US2003179071  (HIRAMOTO MASAYOSHI [JP], et al);
ExaminationUS6303218
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.