EP1602157 - LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING [Right-click to bookmark this link] | |||
Former [2005/49] | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING IT | ||
[2007/31] | Status | No opposition filed within time limit Status updated on 12.12.2008 Database last updated on 03.09.2024 | Most recent event Tooltip | 12.12.2008 | No opposition filed within time limit | published on 14.01.2009 [2009/03] | Applicant(s) | For all designated states TOYODA GOSEI CO., LTD. 1, Aza-Nagahata, Oaza Ochiai, Haruhi-cho Nishi-Kasugai-gun Aichi-ken, 452-8564 / JP | [N/P] |
Former [2008/06] | For all designated states TOYODA GOSEI CO., LTD. 1, Aza-Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun Aichi-ken, 452-8564 / JP | ||
Former [2005/49] | For all designated states TOYODA GOSEI CO., LTD. 1, Aza-Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun Aichi-ken, 452-8564 / JP | Inventor(s) | 01 /
ANDO, Masanobu, TOYODA GOSEI CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP | 02 /
NAKAI, Masahito, TOYODA GOSEI CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP | 03 /
UEMURA, Toshiya, TOYODA GOSEI CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP | 04 /
NAKAYAMA, Masaaki 1450-11 Higashiando, Ando-cho Ikoma-gun, Nara 6391061 / JP | [2008/06] |
Former [2005/49] | 01 /
ANDO, Masanobu, TOYODA GOSEi CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP | ||
02 /
NAKAI, Masahito, TOYODA GOSEi CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP | |||
03 /
UEMURA, Toshiya, TOYODA GOSEi CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP | |||
04 /
NAKAYAMA, Masaaki 1450-11 Higashiando, Ando-cho Ikoma-gun, Nara 6391061 / JP | Representative(s) | TBK Bavariaring 4-6 80336 München / DE | [N/P] |
Former [2008/22] | TBK-Patent Bavariaring 4-6 80336 München / DE | ||
Former [2005/49] | TBK-Patent Bavariaring 4-6 D-80336 München / DE | Application number, filing date | 04772296.2 | 20.08.2004 | [2005/49] | WO2004JP12340 | Priority number, date | JP20030297682 | 21.08.2003 Original published format: JP 2003297682 | [2005/49] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2005020395 | Date: | 03.03.2005 | Language: | EN | [2005/09] | Type: | A1 Application with search report | No.: | EP1602157 | Date: | 07.12.2005 | Language: | EN | The application published by WIPO in one of the EPO official languages on 03.03.2005 takes the place of the publication of the European patent application. | [2005/49] | Type: | B1 Patent specification | No.: | EP1602157 | Date: | 06.02.2008 | Language: | EN | [2008/06] | Search report(s) | International search report - published on: | JP | 03.03.2005 | (Supplementary) European search report - dispatched on: | EP | 20.03.2006 | Classification | IPC: | H01S5/343, H01S5/183, H01L33/00, H01L21/205 | [2006/18] | CPC: |
B82Y20/00 (EP,US);
H01S5/34333 (EP,US);
H01S5/183 (EP,US);
H01L21/02389 (EP,US);
H01L21/02458 (EP,US);
H01L21/0254 (EP,US);
H01L21/02573 (EP,US);
H01L21/0262 (EP,US);
H01L33/32 (EP,US);
|
Former IPC [2005/49] | H01S5/343, H01S5/183, H01L33/00 | Designated contracting states | DE, FR, GB [2006/48] |
Former [2005/49] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR | Extension states | AL | Not yet paid | HR | Not yet paid | LT | Not yet paid | LV | Not yet paid | MK | Not yet paid | Title | German: | LICHTEMITTIERENDES HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG | [2005/49] | English: | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING | [2007/31] | French: | DISPOSITIF A SEMI-CONDUCTEUR LUMINESCENT ET PROCEDE DE PRODUCTION | [2007/31] |
Former [2005/49] | LIGHT-EMITTING SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING IT | ||
Former [2005/49] | DISPOSITIF A SEMI-CONDUCTEUR LUMINESCENT ET SON PROCEDE DE PRODUCTION | Entry into regional phase | 20.09.2005 | National basic fee paid | 20.09.2005 | Search fee paid | 20.09.2005 | Designation fee(s) paid | 20.09.2005 | Examination fee paid | Examination procedure | 20.09.2005 | Examination requested [2005/49] | 02.06.2006 | Despatch of a communication from the examining division (Time limit: M04) | 11.10.2006 | Reply to a communication from the examining division | 08.02.2007 | Despatch of a communication from the examining division (Time limit: M06) | 21.06.2007 | Reply to a communication from the examining division | 10.08.2007 | Communication of intention to grant the patent | 18.12.2007 | Fee for grant paid | 18.12.2007 | Fee for publishing/printing paid | Opposition(s) | 07.11.2008 | No opposition filed within time limit [2009/03] | Fees paid | Renewal fee | 30.08.2006 | Renewal fee patent year 03 | 30.08.2007 | Renewal fee patent year 04 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]JPH1126812 ; | [A]EP0662739 (AT & T CORP [US]) [A] 2,6 * column 2, line 12 - column 3, line 30; figures 1,4 *; | [A]US2002171092 (GOETZ WERNER K [US], et al) [A] 1,2,8,10 * paragraphs [0028] - [0035] - [0054]; figures 5,6 *; | [X]EP1280212 (LUMILEDS LIGHTING LLC [US]) [X] 1,2 * paragraphs [0014] - [0019] - [0028] - [0030] - [0033]; figures 8,9 *; | [Y] - KNEISSL MICHAEL ET AL, "Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20030414), vol. 82, no. 15, ISSN 0003-6951, pages 2386 - 2388, XP012033738 [Y] 1-10 * page 2386, column R; figures 1,2 * DOI: http://dx.doi.org/10.1063/1.1568160 | [Y] - PATENT ABSTRACTS OF JAPAN, (19990430), vol. 1999, no. 04, & JP11026812 A 19990129 (TOYODA GOSEI CO LTD) [Y] 1-10 * abstract * | [A] - NAKAMURA SHUJI ET AL, "InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19980112), vol. 72, no. 2, ISSN 0003-6951, pages 211 - 213, XP012020208 [A] 10 * page 212, column L; figure 2 * DOI: http://dx.doi.org/10.1063/1.120688 | International search | [Y]US5578839 (NAKAMURA SHUJI [JP], et al); | [A]JPH1126812 (TOYODA GOSEI KK); | [Y]JPH1146038 (NICHIA KAGAKU KOGYO KK); | [Y]US6100586 (CHEN YONG [US], et al); | [A]JP2002016284 (TOSHIBA CORP); | [Y]JP2002043695 (SHARP KK); | [Y]JP2003101081 (NICHIA KAGAKU KOGYO KK); | [Y]JP2003197969 (MITSUBISHI CABLE IND LTD); | [A]JP2003229645 (NEC CORP); | [YP]JP2003234545 (SANYO ELECTRIC CO); | [Y] - JOURNAL OF CRYSTAL GROWTH, (19921101), vol. 124, no. 1-4, pages 763 - 771, XP000411855 DOI: http://dx.doi.org/10.1016/0022-0248(92)90549-X | [Y] - JOURNAL OF CRYSTAL GROWTH, (19970101), vol. 170, no. 1-4, pages 349 - 352, XP004087132 DOI: http://dx.doi.org/10.1016/S0022-0248(96)00553-2 |