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EP About this file: EP1602157

EP1602157 - LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING [Right-click to bookmark this link]
Former [2005/49]	LIGHT-EMITTING SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING IT
	[2007/31]
Status	No opposition filed within time limit Status updated on 12.12.2008 Database last updated on 03.09.2024
Most recent event Tooltip	12.12.2008	No opposition filed within time limit	published on 14.01.2009 [2009/03]
Applicant(s)	For all designated states TOYODA GOSEI CO., LTD. 1, Aza-Nagahata, Oaza Ochiai, Haruhi-cho Nishi-Kasugai-gun Aichi-ken, 452-8564 / JP
	[N/P]
Former [2008/06]	For all designated states TOYODA GOSEI CO., LTD. 1, Aza-Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun Aichi-ken, 452-8564 / JP
Former [2005/49]	For all designated states TOYODA GOSEI CO., LTD. 1, Aza-Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun Aichi-ken, 452-8564 / JP
Inventor(s)	01 / ANDO, Masanobu, TOYODA GOSEI CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP
	02 / NAKAI, Masahito, TOYODA GOSEI CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP
	03 / UEMURA, Toshiya, TOYODA GOSEI CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP
	04 / NAKAYAMA, Masaaki 1450-11 Higashiando, Ando-cho Ikoma-gun, Nara 6391061 / JP
	[2008/06]
Former [2005/49]	01 / ANDO, Masanobu, TOYODA GOSEi CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP
	02 / NAKAI, Masahito, TOYODA GOSEi CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP
	03 / UEMURA, Toshiya, TOYODA GOSEi CO., LTD. 1, Aza Nagahata, Oaza Ochiai, Haruhi-cho Nishikasugai-gun, Aichi 4528564 / JP
	04 / NAKAYAMA, Masaaki 1450-11 Higashiando, Ando-cho Ikoma-gun, Nara 6391061 / JP
Representative(s)	TBK Bavariaring 4-6 80336 München / DE
	[N/P]
Former [2008/22]	TBK-Patent Bavariaring 4-6 80336 München / DE
Former [2005/49]	TBK-Patent Bavariaring 4-6 D-80336 München / DE
Application number, filing date	04772296.2	20.08.2004
	[2005/49]
	WO2004JP12340
Priority number, date	JP20030297682	21.08.2003 Original published format: JP 2003297682
	[2005/49]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2005020395
	Date:	03.03.2005
	Language:	EN
	[2005/09]
	Type:	A1 Application with search report
	No.:	EP1602157
	Date:	07.12.2005
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 03.03.2005 takes the place of the publication of the European patent application.
	[2005/49]
	Type:	B1 Patent specification
	No.:	EP1602157
	Date:	06.02.2008
	Language:	EN
	[2008/06]
Search report(s)	International search report - published on:	JP	03.03.2005
	(Supplementary) European search report - dispatched on:	EP	20.03.2006
Classification	IPC:	H01S5/343, H01S5/183, H01L33/00, H01L21/205	[2006/18]
	CPC:	B82Y20/00 (EP,US); H01S5/34333 (EP,US); H01S5/183 (EP,US); H01L21/02389 (EP,US); H01L21/02458 (EP,US); H01L21/0254 (EP,US); (+) H01L21/02573 (EP,US); H01L21/0262 (EP,US); H01L33/32 (EP,US); H01S2304/04 (EP,US); H01S5/3086 (EP,US); H01S5/3409 (EP,US) (-)
	Former IPC [2005/49]	H01S5/343, H01S5/183, H01L33/00
Designated contracting states	DE, FR, GB [2006/48]
Former [2005/49]	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR
Extension states	AL	Not yet paid
	HR	Not yet paid
	LT	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
Title	German:	LICHTEMITTIERENDES HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG	[2005/49]
	English:	LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING	[2007/31]
	French:	DISPOSITIF A SEMI-CONDUCTEUR LUMINESCENT ET PROCEDE DE PRODUCTION	[2007/31]
	Former [2005/49]	LIGHT-EMITTING SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING IT
	Former [2005/49]	DISPOSITIF A SEMI-CONDUCTEUR LUMINESCENT ET SON PROCEDE DE PRODUCTION
Entry into regional phase	20.09.2005	National basic fee paid
	20.09.2005	Search fee paid
	20.09.2005	Designation fee(s) paid
	20.09.2005	Examination fee paid
Examination procedure	20.09.2005	Examination requested [2005/49]
	02.06.2006	Despatch of a communication from the examining division (Time limit: M04)
	11.10.2006	Reply to a communication from the examining division
	08.02.2007	Despatch of a communication from the examining division (Time limit: M06)
	21.06.2007	Reply to a communication from the examining division
	10.08.2007	Communication of intention to grant the patent
	18.12.2007	Fee for grant paid
	18.12.2007	Fee for publishing/printing paid
Opposition(s)	07.11.2008	No opposition filed within time limit [2009/03]
Fees paid	Renewal fee
	30.08.2006	Renewal fee patent year 03
	30.08.2007	Renewal fee patent year 04
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[Y]JPH1126812 ;
		[A]EP0662739 (AT & T CORP [US]) [A] 2,6 * column 2, line 12 - column 3, line 30; figures 1,4 *;
		[A]US2002171092 (GOETZ WERNER K [US], et al) [A] 1,2,8,10 * paragraphs [0028] - [0035] - [0054]; figures 5,6 *;
		[X]EP1280212 (LUMILEDS LIGHTING LLC [US]) [X] 1,2 * paragraphs [0014] - [0019] - [0028] - [0030] - [0033]; figures 8,9 *;
		[Y] - KNEISSL MICHAEL ET AL, "Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20030414), vol. 82, no. 15, ISSN 0003-6951, pages 2386 - 2388, XP012033738 [Y] 1-10 * page 2386, column R; figures 1,2 * DOI: http://dx.doi.org/10.1063/1.1568160
		[Y] - PATENT ABSTRACTS OF JAPAN, (19990430), vol. 1999, no. 04, & JP11026812 A 19990129 (TOYODA GOSEI CO LTD) [Y] 1-10 * abstract *
		[A] - NAKAMURA SHUJI ET AL, "InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19980112), vol. 72, no. 2, ISSN 0003-6951, pages 211 - 213, XP012020208 [A] 10 * page 212, column L; figure 2 * DOI: http://dx.doi.org/10.1063/1.120688
	International search	[Y]US5578839 (NAKAMURA SHUJI [JP], et al);
		[A]JPH1126812 (TOYODA GOSEI KK);
		[Y]JPH1146038 (NICHIA KAGAKU KOGYO KK);
		[Y]US6100586 (CHEN YONG [US], et al);
		[A]JP2002016284 (TOSHIBA CORP);
		[Y]JP2002043695 (SHARP KK);
		[Y]JP2003101081 (NICHIA KAGAKU KOGYO KK);
		[Y]JP2003197969 (MITSUBISHI CABLE IND LTD);
		[A]JP2003229645 (NEC CORP);
		[YP]JP2003234545 (SANYO ELECTRIC CO);
		[Y] - JOURNAL OF CRYSTAL GROWTH, (19921101), vol. 124, no. 1-4, pages 763 - 771, XP000411855 DOI: http://dx.doi.org/10.1016/0022-0248(92)90549-X
		[Y] - JOURNAL OF CRYSTAL GROWTH, (19970101), vol. 170, no. 1-4, pages 349 - 352, XP004087132 DOI: http://dx.doi.org/10.1016/S0022-0248(96)00553-2

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