-
EP1676305
European procedure
- EP About this file
- EP Legal status
- EP Federated register
- EP Event history
- EP Citations
- EP Patent family
- EP All documents
Extract from the Register of European Patents
EP About this file: EP1676305
| EP1676305 - SCHOTTKY-BARRIER MOSFET MANUFACTURING METHOD USING ISOTROPIC ETCH PROCESS [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 08.05.2009 Database last updated on 03.09.2024 | Most recent event Tooltip | 08.05.2009 | Application deemed to be withdrawn | published on 10.06.2009 [2009/24] | Applicant(s) | For all designated states Spinnaker Semiconductor, Inc. 7550 Market Place Drive Eden Prairie, MN 55344 / US | [2006/27] | Inventor(s) | 01 /
SNYDER, John, P. 5705 Lois Lane Edina, MN 55439 / US | 02 /
LARSON, John, M. 419 College Street Northfield, MN 55057 / US | [2006/27] | Representative(s) | McLeish, Nicholas Alistair Maxwell Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | [N/P] |
| Former [2006/27] | McLeish, Nicholas Alistair Maxwell Boult Wade Tennant Verulam Gardens 70 Gray's Inn Road London WC1X 8BT / GB | Application number, filing date | 04794042.4 | 04.10.2004 | [2006/27] | WO2004US32539 | Priority number, date | US20030509142P | 03.10.2003 Original published format: US 509142 P | [2006/27] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2005036631 | Date: | 21.04.2005 | Language: | EN | [2005/16] | Type: | A1 Application with search report | No.: | EP1676305 | Date: | 05.07.2006 | Language: | EN | The application published by WIPO in one of the EPO official languages on 21.04.2005 takes the place of the publication of the European patent application. | [2006/27] | Search report(s) | International search report - published on: | EP | 21.04.2005 | Classification | IPC: | H01L21/336, H01L29/417, H01L29/78 | [2006/27] | CPC: |
H01L29/41766 (EP,US);
H01L29/66636 (EP,US);
H01L29/66643 (EP,US);
H01L29/7839 (EP,US)
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LI, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2006/27] | Extension states | AL | Not yet paid | HR | Not yet paid | LT | Not yet paid | LV | Not yet paid | MK | Not yet paid | Title | German: | SCHOTTKY-BARRIEREN-MOSFET-HERSTELLUNGSVERFAHREN UNTER VERWENDUNG EINES ISOTROPEN ÄTZPROZESSES | [2006/27] | English: | SCHOTTKY-BARRIER MOSFET MANUFACTURING METHOD USING ISOTROPIC ETCH PROCESS | [2006/27] | French: | PROCEDE DE FABRICATION D'UN MOSFET A BARRIERE DE SCHOTTKY AVEC GRAVURE ISOTROPE | [2006/27] | Entry into regional phase | 24.04.2006 | National basic fee paid | 24.04.2006 | Designation fee(s) paid | 24.04.2006 | Examination fee paid | Examination procedure | 24.04.2006 | Examination requested [2006/27] | 28.11.2006 | Despatch of a communication from the examining division (Time limit: M06) | 08.06.2007 | Reply to a communication from the examining division | 07.08.2008 | Despatch of a communication from the examining division (Time limit: M04) | 18.12.2008 | Application deemed to be withdrawn, date of legal effect [2009/24] | 23.01.2009 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2009/24] | Fees paid | Renewal fee | 27.10.2006 | Renewal fee patent year 03 | 24.10.2007 | Renewal fee patent year 04 | Penalty fee | Additional fee for renewal fee | 31.10.2008 | 05 M06 Not yet paid |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [XY]US5864161 (MITANI YUICHIRO [JP], et al) [X] 1-10,13-24 * column 13, line 14 - column 16, line 64; figures 3A-3F,4A-4C,5A-5E,30A-30E,39A-39R * * column 29, lines 49-60 * * column 24, lines 28-31 * * column 32, lines 33-55 * * column 36, line 66 - column 37, line 2 * [Y] 11,25; | [X]US5834793 (SHIBATA TADASHI [JP]) [X] 1,2,7-10,12-15,20 * column 9, line 48 - column 10, line 4; figures 15A-15C *; | [YA]WO03015181 (SPINNAKER SEMICONDUCTOR INC [US]) [Y] 11,25 * the whole document * [A] 1-10,12-24 |