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EP1694887
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EP About this file: EP1694887
| EP1694887 - CONTROLLED GROWTH OF GALLIUM NITRIDE NANOtubes [Right-click to bookmark this link] | |||
| Former [2006/35] | CONTROLLED GROWTH OF GALLIUM NITRIDE NANOSTRUCTURES | ||
| [2011/08] | Status | The application is deemed to be withdrawn Status updated on 25.11.2011 Database last updated on 20.05.2024 | Most recent event Tooltip | 25.11.2011 | Application deemed to be withdrawn | published on 28.12.2011 [2011/52] | Applicant(s) | For all designated states Yale University Two Whitney Avenue New Haven, CT 06510 / US | [N/P] |
| Former [2006/35] | For all designated states Yale University Two Whitney Avenue New Haven, CT 06511 / US | Inventor(s) | 01 /
PFEFFERLE, Lisa 17 W. Haycock Pt. Rd. Branford, CT 06405 / US | 02 /
CIUPARU, Dragos 516 Orange Street 32 New Haven, CT 06511 / US | 03 /
HAN, Jung 30 Peck Hill Road Woodbridge, CT 06525 / US | 04 /
Haller, Gary Master's House, 70 High Street New Haven, CT 06511 / US | [2006/35] | Representative(s) | Chapman, Paul Gilmour, et al Marks & Clerk LLP The Beacon 176 St Vincent Street Glasgow G2 5SG / GB | [N/P] |
| Former [2008/33] | Chapman, Paul Gilmour, et al Marks & Clerk 19 Royal Exchange Square Glasgow G1 3AE / GB | ||
| Former [2006/35] | Chapman, Paul Gilmour, et al Marks & Clerk Scotland 19 Royal Exchange Square Glasgow G1 3AE / GB | Application number, filing date | 04813969.5 | 13.12.2004 | [2006/35] | WO2004US41725 | Priority number, date | US20030529430P | 12.12.2003 Original published format: US 529430 P | [2006/35] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2005059973 | Date: | 30.06.2005 | Language: | EN | [2005/26] | Type: | A2 Application without search report | No.: | EP1694887 | Date: | 30.08.2006 | Language: | EN | The application published by WIPO in one of the EPO official languages on 30.06.2005 takes the place of the publication of the European patent application. | [2006/35] | Search report(s) | International search report - published on: | EP | 04.08.2005 | Classification | IPC: | C30B29/40 | [2006/35] | CPC: |
C30B29/406 (EP,US);
B82Y10/00 (EP,US);
B82Y30/00 (EP,US);
C01B21/0632 (EP,US);
C23C16/045 (EP,US);
C23C16/301 (EP,US);
C30B25/00 (EP,US);
C30B25/02 (EP,US);
C30B29/605 (EP,US);
C01P2004/04 (EP,US);
C01P2004/13 (EP,US);
C01P2004/16 (EP,US);
C01P2004/17 (EP,US);
Y10S977/816 (EP,US);
Y10S977/891 (EP,US);
Y10S977/893 (EP,US)
(-)
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2006/35] | Extension states | AL | Not yet paid | BA | Not yet paid | HR | Not yet paid | LV | Not yet paid | MK | Not yet paid | YU | Not yet paid | Title | German: | KONTROLLIERTES WACHSTUM VON GALLIUMNITRID-NANOröhREN | [2011/08] | English: | CONTROLLED GROWTH OF GALLIUM NITRIDE NANOtubes | [2011/08] | French: | CROISSANCE REGULEE DE NANOSTubeS DE NITRURE DE GALLIUM | [2011/08] |
| Former [2006/35] | KONTROLLIERTES WACHSTUM VON GALLIUMNITRID-NANOSTRUKTUREN | ||
| Former [2006/35] | CONTROLLED GROWTH OF GALLIUM NITRIDE NANOSTRUCTURES | ||
| Former [2006/35] | CROISSANCE REGULEE DE NANOSTRUCTURES DE NITRURE DE GALLIUM | Entry into regional phase | 07.07.2006 | National basic fee paid | 07.07.2006 | Designation fee(s) paid | 07.07.2006 | Examination fee paid | Examination procedure | 07.07.2006 | Examination requested [2006/35] | 23.07.2008 | Despatch of a communication from the examining division (Time limit: M06) | 28.01.2009 | Reply to a communication from the examining division | 09.02.2011 | Communication of intention to grant the patent | 21.06.2011 | Application deemed to be withdrawn, date of legal effect [2011/52] | 09.08.2011 | Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time [2011/52] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 23.07.2008 | Fees paid | Renewal fee | 09.03.2007 | Renewal fee patent year 03 | 24.12.2007 | Renewal fee patent year 04 | 24.12.2008 | Renewal fee patent year 05 | 28.12.2009 | Renewal fee patent year 06 | 27.12.2010 | Renewal fee patent year 07 | Penalty fee | Additional fee for renewal fee | 31.12.2006 | 03 M06 Fee paid on 09.03.2007 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [Y]US2002130311 (LIEBER CHARLES M [US], et al) [Y] 1-6,8,16-19 * paragraph [0215] * * paragraph [0297] - paragraph [0310]; figures 6,19; claims 262,287-303 *; | [A]US6333016 (RESASCO DANIEL E [US], et al) [A] 1-24 * examples 1-8; claims 1-6; tables 1-4 *; | [YA] - WINKLER H ET AL, "QUANTUM-CONFINED GALLIUM NITRIDE IN MCM-41", ADVANCED MATERIALS, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, (19991201), vol. 11, no. 17, ISSN 0935-9648, pages 1444 - 1448, XP000893391 [Y] 1-13,16-19 * page 1444, column 2 - page 1445, column 2; figure 2 * [A] 14,15,21 DOI: http://dx.doi.org/10.1002/(SICI)1521-4095(199912)11:17<1444::AID-ADMA1444>3.3.CO;2-8 | [YA] - CHENG G S ET AL, "Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina", JOURNAL OF MATERIALS RESEARCH MATER. RES. SOC USA, (200002), vol. 15, no. 2, ISSN 0884-2914, pages 347 - 350, XP002330542 [Y] 1,3,4,7,9-13,16-19 * page 347, column 2, line 1 - page 350, column 2, line 10; figures 1,4 * [A] 20,22-24 | [PX] - III-NITRIDE ZERO- AND ONE-DIMENSIONAL NANOSTRUCTURES BY MOCVD, JUNG HAN ET AL, UKC US -KOREAN CONFERENCE PROCEEDING 2004, (20040812), XP002330543 [PX] 1-10,13,16-19 * the whole document * | [A] - PARALA H ET AL, "Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors", INSPEC, THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB, (200108), Database accession no. 7149448, XP002330544 [A] 1-24 * abstract * | [ ] - Journal de Physique IV (Proceedings) EDP Sciences France, (200108), vol. 11, no. 3, ISSN 1155-4339, pages Pr3 - 473 |