-
EP1583143
European procedure
Extract from the Register of European Patents
EP About this file: EP1583143
| EP1583143 - Method of fabricating self-aligned source and drain contacts in a Double gate FET with controlled manufacturing of a thin Si or non-Si channel [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 10.08.2012 Database last updated on 02.09.2024 | Most recent event Tooltip | 10.08.2012 | No opposition filed within time limit | published on 12.09.2012 [2012/37] | Applicant(s) | For all designated states IMEC Kapeldreef 75 3001 Leuven / BE | For all designated states NXP B.V. High Tech Campus 60 5656 AG Eindhoven / NL | [2009/33] |
| Former [2009/11] | For all designated states Interuniversitair Micro-Elektronica Centrum Kapeldreef 75 3001 Leuven / BE | ||
| For all designated states NXP B.V. High Tech Campus 60 5656 AG Eindhoven / NL | |||
| Former [2005/40] | For all designated states Interuniversitair Micro-Elektronica Centrum Kapeldreef 75 3001 Leuven / BE | ||
| For all designated states Koninklijke Philips Electronics, N.V. Groenewoudseweg 1 5621 BA Eindhoven / NL | Inventor(s) | 01 /
Ponomarev, Youri V. Naamsesteenweg 501 3001 Leuven / BE | 02 /
Loo, Josine Johanna Gerarda Petra Groenstraat 12/2003 3001 Leuven / BE | [2005/40] | Representative(s) | Bird, Ariane, et al Bird Goën & Co Wetenschapspark Arenberg Gaston Geenslaan 9 3001 Heverlee / BE | [N/P] |
| Former [2005/40] | Bird, Ariane, et al Bird Goen & Co, Klein Dalenstraat 42A 3020 Winksele / BE | Application number, filing date | 05003842.1 | 23.02.2005 | [2005/40] | Priority number, date | EP20040101291 | 29.03.2004 Original published format: EP 04101291 | [2005/40] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1583143 | Date: | 05.10.2005 | Language: | EN | [2005/40] | Type: | A3 Search report | No.: | EP1583143 | Date: | 11.06.2008 | [2008/24] | Type: | B1 Patent specification | No.: | EP1583143 | Date: | 05.10.2011 | Language: | EN | [2011/40] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.05.2008 | Classification | IPC: | H01L21/336, H01L29/786 | [2005/40] | CPC: |
H01L29/78696 (EP);
B82Y10/00 (EP);
H01L21/76897 (EP);
H01L29/0665 (EP);
H01L29/0673 (EP);
H01L29/66265 (EP);
| Designated contracting states | DE, FR, GB [2009/08] |
| Former [2005/40] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | Methode zur Herstellung von selbst-justierten Source/Drain-Kontakten in einem Doppel-Gate-FET unter kontrollierter Herstellung eines dünnen Si- oder Nicht-Si-Kanals | [2005/40] | English: | Method of fabricating self-aligned source and drain contacts in a Double gate FET with controlled manufacturing of a thin Si or non-Si channel | [2005/40] | French: | Méthode pour la fabrication de contacts source/drain auto-alignés dans un FET à double grille avec un contrôle du procédé de fabrication d'un canal mince avec ou sans silicium | [2005/40] | Examination procedure | 01.12.2008 | Examination requested [2009/08] | 12.12.2008 | Loss of particular rights, legal effect: designated state(s) | 16.02.2009 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR | 25.06.2010 | Despatch of a communication from the examining division (Time limit: M06) | 27.12.2010 | Reply to a communication from the examining division | 10.02.2011 | Communication of intention to grant the patent | 06.06.2011 | Fee for grant paid | 06.06.2011 | Fee for publishing/printing paid | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 25.06.2010 | Opposition(s) | 06.07.2012 | No opposition filed within time limit [2012/37] | Fees paid | Renewal fee | 15.01.2007 | Renewal fee patent year 03 | 13.02.2008 | Renewal fee patent year 04 | 24.02.2009 | Renewal fee patent year 05 | 24.02.2010 | Renewal fee patent year 06 | 23.02.2011 | Renewal fee patent year 07 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XA]US6214693 (KOMATSU HIROSHI [JP]) [X] 13,14 * figure 6B * [A] 1-12; | [XA]WO03083934 (ADVANCED MICRO DEVICES INC [US]) [X] 13,14 * figure 1 * [A] 1-12; | [XA]JP2003309267 (TOSHIBA CORP) [X] 13,14 * abstract * [A] 1-12; | US2004222471 [ ] (INOH KAZUMI [JP]) [ ] * figures 1A-1F,6I * |