Extract from the Register of European Patents

EP About this file: EP1555693

EP1555693 - Method to produce a nonvolatile semiconductor memory device [Right-click to bookmark this link]
Former [2005/29]Nonvolatile semiconductor memory device
[2007/40]
StatusNo opposition filed within time limit
Status updated on  12.06.2009
Database last updated on 28.03.2026
Most recent event   Tooltip12.06.2009No opposition filed within time limitpublished on 15.07.2009  [2009/29]
Applicant(s)For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho
Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
[N/P]
Former [2008/32]For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
Former [2005/29]For all designated states
Sharp Kabushiki Kaisha
22-22, Nagaike-cho, Abeno-ku
Osaka-shi, Osaka 545-8522 / JP
Inventor(s)01 / Kawazoe, Hidechika
1-1-1-208 Seiwadai, Kawai-cho
Kitakatsuragi-gun Nara 636-0081 / JP
02 / Tamai, Yukio
Rapport Fukuyama, 2 Asahi, Daimon-cho
Fukuyama-shi, Hiroshima 721-0926 / JP
03 / Shimaoka, Atsushi
772 Touichi-cho
Kashihara-shi Nara 634-0008 / JP
04 / Hagiwara, Naoto
Harunataiyoso B211, 809 Shimomuroda Harunamachi
Gumma-gun, Gumma 370-3342 / JP
05 / Masuda, Hidetoshi
Sunny Castle 202, 2-8-15 Kataokamachi
Takasaki-shi, Gumma 370-0862 / JP
06 / Suzuki, Toshimasa
Pure Stage C202, 3-16-13 Yachiyomachi
Takasaki-shi, Gumma 370-0861 / JP
 [2008/32]
Former [2005/29]01 / Kawazoe, Hidechika
1-1-1-208 Seiwadai Kawai-cho
Kitakatsuragi-gun Nara 636-0081 / JP
02 / Tamai, Yukio
Rapport Fukuyama 2 Asahi Daimon-cho
Fukuyama-shi Hiroshima 721-0926 / JP
03 / Shimaoka, Atsushi
772 Touichi-cho
Kashihara-shi Nara 634-0008 / JP
04 / Hagiwara, Naoto
Harunataiyoso B211 809 Shimomuroda Harunamachi
Gumma-gun Gumma 370-3342 / JP
05 / Masuda, Hidetoshi
Sunny Castle 202 2-8-15 Kataokamachi
Takasaki-shi Gumma 370-0862 / JP
06 / Suzuki, Toshimasa
Pure Stage C202 3-16-13 Yachiyomachi
Takasaki-shi Gumma 370-0861 / JP
Representative(s)Brown, Kenneth Richard, et al
R.G.C. Jenkins & Co
26 Caxton Street
London SW1H 0RJ / GB
[N/P]
Former [2005/29]Brown, Kenneth Richard, et al
R.G.C. Jenkins & Co. 26 Caxton Street
London SW1H 0RJ / GB
Application number, filing date05250075.810.01.2005
[2005/29]
Priority number, dateJP2004000632114.01.2004         Original published format: JP 2004006321
[2005/29]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1555693
Date:20.07.2005
Language:EN
[2005/29]
Type: B1 Patent specification 
No.:EP1555693
Date:06.08.2008
Language:EN
[2008/32]
Search report(s)(Supplementary) European search report - dispatched on:EP25.05.2005
ClassificationIPC:H01L27/24
[2007/42]
CPC:
G11C13/0007 (EP,KR,US); H10B63/30 (EP,KR,US); G11C13/003 (EP,KR,US);
H10N70/026 (EP,KR,US); H10N70/041 (EP,KR,US); H10N70/20 (EP,KR,US);
H10N70/826 (EP,KR,US); H10N70/8836 (EP,KR,US); G11C2213/31 (EP,KR,US);
G11C2213/78 (EP,KR,US); G11C2213/79 (EP,KR,US) (-)
Former IPC [2005/29]H01L27/24, H01L45/00
Designated contracting statesDE,   FR,   GB,   IT [2006/15]
Former [2005/29]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Verfahren zur Herstellung einer nichtflüchtigen Halbleiterspeichervorrichtung[2007/40]
English:Method to produce a nonvolatile semiconductor memory device[2007/40]
French:Méthode pour produire un mémoire non-volatile à base de semiconducteurs[2007/40]
Former [2005/29]Nichtflüchtige Halbleiterspeichervorrichtung
Former [2005/29]Nonvolatile semiconductor memory device
Former [2005/29]Mémoire non-volatile à base de semiconducteurs
Examination procedure30.09.2005Examination requested  [2005/48]
25.10.2005Despatch of a communication from the examining division (Time limit: M04)
21.01.2006Loss of particular rights, legal effect: designated state(s)
01.03.2006Reply to a communication from the examining division
17.05.2006Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HU, IE, IS, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR
03.07.2006Despatch of a communication from the examining division (Time limit: M04)
10.11.2006Reply to a communication from the examining division
30.11.2006Despatch of a communication from the examining division (Time limit: M04)
30.03.2007Reply to a communication from the examining division
27.09.2007Communication of intention to grant the patent
13.03.2008Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time
21.05.2008Fee for grant paid
21.05.2008Fee for publishing/printing paid
Opposition(s)07.05.2009No opposition filed within time limit [2009/29]
Request for further processing for:The application is deemed to be withdrawn due to failure to fulfill actions required for granting the patent
21.05.2008Request for further processing filed
21.05.2008Full payment received (date of receipt of payment)
Request granted
06.06.2008Decision despatched
Fees paidRenewal fee
12.01.2007Renewal fee patent year 03
14.01.2008Renewal fee patent year 04
Penalty fee
Penalty fee Rule 85a EPC 1973
28.02.2006AT   M01   Not yet paid
28.02.2006BE   M01   Not yet paid
28.02.2006BG   M01   Not yet paid
28.02.2006CH   M01   Not yet paid
28.02.2006CY   M01   Not yet paid
28.02.2006CZ   M01   Not yet paid
28.02.2006DK   M01   Not yet paid
28.02.2006EE   M01   Not yet paid
28.02.2006ES   M01   Not yet paid
28.02.2006FI   M01   Not yet paid
28.02.2006GR   M01   Not yet paid
28.02.2006HU   M01   Not yet paid
28.02.2006IE   M01   Not yet paid
28.02.2006IS   M01   Not yet paid
28.02.2006LT   M01   Not yet paid
28.02.2006LU   M01   Not yet paid
28.02.2006MC   M01   Not yet paid
28.02.2006NL   M01   Not yet paid
28.02.2006PL   M01   Not yet paid
28.02.2006PT   M01   Not yet paid
28.02.2006RO   M01   Not yet paid
28.02.2006SE   M01   Not yet paid
28.02.2006SI   M01   Not yet paid
28.02.2006SK   M01   Not yet paid
28.02.2006TR   M01   Not yet paid
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Documents cited:Search[X] US2003156445  (ZHUANG WEI-WEI et al.) [X] 1-4,7,8 * paragraph [0013] - paragraph [0018] *
 [X] US6204139  (LIU SHANGQING et al.) [X] 1,2,4,7,8 * column 4, line 27 - column 5, line 59; figure 1 * * column 3, line 20 - line 34 *
 [X] EP1335417  (SHARP KK et al.) [X] 1-10 * paragraph [0041] - paragraph [0046]; figure 1 *
 [A] US6583003  (HSU SHENG TENG et al.) [A] 1-10 * abstract *
 [A] US6473332  (IGNATIEV ALEX et al.) [A] 1-10 * abstract *
 [PX] US2004160804  (RINERSON DARRELL et al.) [PX] 1-10 * abstract * * paragraph [0051] *
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