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Extract from the Register of European Patents

EP About this file: EP1564817

EP1564817 - Photodiode having light-absorption part separated by PN junction and method of fabricating the same [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  02.09.2011
Database last updated on 11.09.2024
Most recent event   Tooltip02.09.2011Application deemed to be withdrawnpublished on 05.10.2011  [2011/40]
Applicant(s)For all designated states
Samsung Electronics Co., Ltd.
416 Maetan-dong
Yeongtong-gu
Suwon-si
Gyeonggi-do 442-742 / KR
[N/P]
Former [2005/33]For all designated states
Samsung Electronics Co., Ltd.
416 Maetan-dong, Yeongtong-gu
Suwon-si, Gyeonggi-do 442-742 / KR
Inventor(s)01 / Kim, Tae-jin
514-1902 Shinnamushil 5-danji Apt Yeongtong-dong
Yeongtong-gu Suwon-si Gyeonggi-do / KR
02 / Park, Jin-Hyeong
2-805, Seoul Apt. Yeouido-dong
Yeongdeungpo-gu Seoul / KR
 [2005/33]
Representative(s)Mounteney, Simon James
Marks & Clerk LLP
15 Fetter Lane
London EC4A 1BW / GB
[N/P]
Former [2005/33]Mounteney, Simon James
Marks & Clerk 90 Long Acre
London WC2E 9RA / GB
Application number, filing date05250817.310.02.2005
[2005/33]
Priority number, dateKR2004000884510.02.2004         Original published format: KR 2004008845
[2005/33]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1564817
Date:17.08.2005
Language:EN
[2005/33]
Search report(s)(Supplementary) European search report - dispatched on:EP23.05.2005
ClassificationIPC:H01L31/101, H01L31/0232
[2005/33]
CPC:
H01L31/101 (EP); H01L31/02327 (EP)
Designated contracting statesDE,   FI,   GB,   SE [2006/19]
Former [2005/33]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Photodiode mit einer durch einen PN-Übergang getrennten lichtabsorbierenden Zone und Herstellungsverfahren dazu[2005/33]
English:Photodiode having light-absorption part separated by PN junction and method of fabricating the same[2005/33]
French:Photodiode avec une zone d' absorption de la lumière séparée par une jonction PN et méthode de fabrication[2005/33]
Examination procedure07.03.2005Examination requested  [2005/33]
27.06.2008Despatch of a communication from the examining division (Time limit: M05)
06.10.2008Reply to a communication from the examining division
26.11.2010Communication of intention to grant the patent
07.04.2011Application deemed to be withdrawn, date of legal effect  [2011/40]
16.05.2011Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2011/40]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  27.06.2008
Fees paidRenewal fee
14.02.2007Renewal fee patent year 03
13.02.2008Renewal fee patent year 04
31.03.2008Renewal fee patent year 05
16.02.2010Renewal fee patent year 06
Penalty fee
Additional fee for renewal fee
28.02.201107   M06   Not yet paid
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Documents cited:Search[XA]EP0481552  (PHILIPS ELECTRONICS UK LTD [GB], et al) [X] 1-5 [A] 10-15;
 [XA]US5204520  (GREEN SAMUEL I [US]) [X] 1-5,7,8,10,12,14 * column 4, line 4 - column 6, line 16; figures 1,2 * [A] 6,9,15;
 [XA]EP0621639  (SHARP KK [JP]) [X] 1-5,7,10,12,14 * column 4, line 39 - column 8, line 27; figures 1-4,7-9 * [A] 11,13;
 [A]US2002096696  (EOM JAE-WON [KR], et al) [A] 1-15 * the whole document *;
 [A]US2003168658  (FUKUSHIMA TOSHIHIKO [JP], et al) [A] 1-15 * the whole document *;
 [A]US2003168709  (KASHIURA YUKIKO [JP]) [A] 1-15* the whole document *;
 [PA]  - PARK C H ET AL, "n-ZnO/p-Si photodiodes fully isolated by B<+> ion-implantation", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, (200402), vol. 216, ISSN 0168-583X, pages 127 - 130, XP004489490 [PA] 1-15 * the whole document *

DOI:   http://dx.doi.org/10.1016/j.nimb.2003.11.031
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